R1A TRANSISTOR Search Results

R1A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

R1A TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APEX PA12 Abstract: 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog super match pair dac 85741 line follower robot PA03-S Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE	Original	546-APEX APEX PA12 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog super match pair dac 85741 line follower robot PA03-S	PDF
circuit diagram of line follower robot Abstract: 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog solar inverters schematic diagram schematic diagram Power supply 500w line follower robot Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE	Original	546-APEX circuit diagram of line follower robot 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog solar inverters schematic diagram schematic diagram Power supply 500w line follower robot	PDF
transistor c37 Abstract: R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23 Text: Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • l.9 ± 0 .2 available in the following packages: 0 .4 5 ± 0.1 0 .9 5 0.9S — SST3 (SST, SOT-23) D — SMT3 (SMT, SC-59)	OCR Scan	OT-23) SC-59) OT-323) transistor c37 R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23	PDF
RO3010 Abstract: C14A z14b Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 MRF374/D RO3010 C14A z14b	PDF
lm 3904 Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904 Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications	OCR Scan	T3906/SST3906/M ST3906/RXT3906/PN UMT3904/SST3904/MMST3904/RXT3904/2N3904 T3904 ST3904 RXT3904 T3904, UMT3904 SST3904 MMST3904 lm 3904 2N3904 T 2n390 2N3904TA 2N3904	PDF
SST3904 Abstract: 2N3904 Transistors UMT3904 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3904 MMST3906 Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1	Original	UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3906	PDF
TPS6420x Abstract: transistor R1A cff transistor 5 pin TPS64203 TPS75003 r1a transistor CFF RESISTORS Text: Application Report SLVA210 – August 2005 – Revised October 2005 Using Ceramic Output Capacitors with the TPS6420x and TPS75003 Buck Controllers ABSTRACT This application report explains how to size the feedforward capacitor when using ceramic output capacitors for the TPS6420x and the TPS75003 buck controllers.	Original	SLVA210 TPS6420x TPS75003 transistor R1A cff transistor 5 pin TPS64203 r1a transistor CFF RESISTORS	PDF
Untitled Abstract: No abstract text available Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 28rola,	PDF
C13B Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w	PDF
transistor R1A 37 Abstract: 5233 mosfet J146 VJ1210y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y	PDF
C3B Kemet Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 C3B Kemet	PDF
IR2110 Abstract: AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note Text: Design Tips DT 92-1B Solving Noise Problems In High Power, High Frequency Control IC Driven Power Stages Introduction Stray Inductances The IR2110 high and low side driver Control IC is one of a family of International Rectifier devices which provides a convenient and cost	Original	92-1B IR2110 IR2110 AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note	PDF
RO3010 Abstract: j352 transistor j352 bc17a VJ2225Y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y	PDF
RO3010 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 RO3010	PDF

SST3904 Abstract: UMT3904 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106 Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 zExternal dimensions Unit : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.7±0.1 0.2 (3) 2.1±0.1 (2) 1.25±0.1	Original	UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3906 SST3906 T106	PDF
rkm 33 transistor Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.	Original	IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor	PDF
transmitter 446 mhz Abstract: R5B transistor J960 470-860 mhz Power amplifier w Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w	PDF
rkm 33 transistor Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.	OCR Scan	FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor	PDF
MRF374A Abstract: marking c14a l1a marking Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A marking c14a l1a marking	PDF
RO3010 Abstract: RF POWER VERTICAL MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET	PDF
SST3904 Abstract: UMT3904 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106 Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1	Original	UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3906 SST3906 T106	PDF
Untitled Abstract: No abstract text available Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3	Original	UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904	PDF
SST3904 Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116 Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3	Original	UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 T106 T116	PDF
EB206 Abstract: D1A diode Nippon capacitors inductances Text: MOTOROLA Order this document by EB206/D SEMICONDUCTOR ENGINEERING BULLETIN EB206 Solving Noise Problems in High Power, High Frequency Control IC Driven Power Stages Prepared by: Larry Baxter INTRODUCTION The MPIC2113 high & low side driver Control IC is one of	Original	EB206/D EB206 MPIC2113 MPIC2113 EB206/D* EB206/D D1A diode Nippon capacitors inductances	PDF

R1A TRANSISTOR Search Results

R1A TRANSISTOR Result Highlights (5)

R1A TRANSISTOR Datasheets Context Search

APEX PA12

circuit diagram of line follower robot

transistor c37

RO3010

lm 3904

SST3904

TPS6420x

Untitled

C13B

transistor R1A 37

C3B Kemet

IR2110

RO3010

RO3010

SST3904

rkm 33 transistor

transmitter 446 mhz

rkm 33 transistor

MRF374A

RO3010

SST3904

Untitled

SST3904

EB206