R1LP0408CSB Search Results

R1LP0408CSB Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R1LP0408CSB-5SI#S0		Renesas Electronics Corporation	Low Power SRAM, TSOP(2), /Embossed Tape
R1LP0408CSB-5SI#D0		Renesas Electronics Corporation	Low Power SRAM, TSOP(2), /Embossed Tape
R1LP0408CSB-7LC#B0		Renesas Electronics Corporation	Low Power SRAM, TSOP(2), /Tray
R1LP0408CSB-5SC#D0		Renesas Electronics Corporation	Low Power SRAM, TSOP(2), /Tray
R1LP0408CSB-5SC#S0		Renesas Electronics Corporation	Low Power SRAM, TSOP(2), /Embossed Tape

R1LP0408CSB Price and Stock

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Rochester Electronics LLC R1LP0408CSB-7LC-D0 IC SRAM 4MBIT PARALLEL 32TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1LP0408CSB-7LC-D0	Tray			19	1 - 10 - 100 $16.59 1000 $16.59 10000 $16.59	Buy Now
Rochester Electronics LLC R1LP0408CSB-5UC-D0 STANDARD SRAM, 512KX8, 55NS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1LP0408CSB-5UC-D0	Bulk			19	1 - 10 - 100 $16.59 1000 $16.59 10000 $16.59	Buy Now
Rochester Electronics LLC R1LP0408CSB-7LC-S0 IC SRAM 4MBIT PARALLEL 32TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1LP0408CSB-7LC-S0	Bulk			19	1 - 10 - 100 $16.59 1000 $16.59 10000 $16.59	Buy Now
Rochester Electronics LLC R1LP0408CSB-7UI-D0 STANDARD SRAM, 512KX8, 70NS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1LP0408CSB-7UI-D0	Bulk			19	1 - 10 - 100 $16.59 1000 $16.59 10000 $16.59	Buy Now
Renesas Electronics Corporation R1LP0408CSB-5SC#B0 IC,SRAM,512KX8,CMOS,TSOP,32PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	R1LP0408CSB-5SC#B0		54			1 $42 10 $42 100 $35.7 1000 $35.7 10000 $35.7	Buy Now

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R1LP0408CSB Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R1LP0408CSB-5SC		Renesas Technology	4 M SRAM (512-kword x 8-bit)		Original	PDF
R1LP0408CSB-5SC#D0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP		Original	PDF
R1LP0408CSB-5SC#S0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP		Original	PDF
R1LP0408CSB-5SI		Hitachi Semiconductor	Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)		Original	PDF
R1LP0408CSB-5SI		Renesas Technology	Wide Temperature Range Version 4M SRAM (512-kword x 8-bit)		Original	PDF
R1LP0408CSB-5SI#D0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP		Original	PDF
R1LP0408CSB-5SI#S0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP		Original	PDF
R1LP0408CSB-7LC		Renesas Technology	4 M SRAM (512-kword x 8-bit)		Original	PDF
R1LP0408CSB-7LC#D0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP		Original	PDF
R1LP0408CSB-7LC#S0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP		Original	PDF
R1LP0408CSB-7LI		Hitachi Semiconductor	Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)		Original	PDF
R1LP0408CSB-7LI#D0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP		Original	PDF
R1LP0408CSB-7LI#S0		Renesas Technology	Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP		Original	PDF

R1LP0408CSB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SOP 8 200MIL Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with	Original	D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
HM2V8100TTI5SE Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns	Original	TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI	PDF
K6X0808C1D-BF55 Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI	Original	CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
K6X8016T3B-UF55 Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm	Original	AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70	PDF
R1LP0408C-5SI Abstract: R1LP0408CSP-5SI R1LP0408C-I R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-7LI r1lp0408c Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: R1LP0408C-C Series 4 M SRAM 512-kword x 8-bit REJ03C0077-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process	Original	R1LP0408C-C 512-kword REJ03C0077-0100Z 32-pin	PDF
Untitled Abstract: No abstract text available Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their	Original	AN1012	PDF
HN58V1001TI-25E Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,	Original	REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI	PDF
R1LP0408CSB-7LI Abstract: R1LP0408CSC-5SI R1LP0408C-5SI R1LP0408C-I R1LP0408CSB-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI MAY26 R1LP0408CSP Text: R1LP0408C-I Series Wide Temperature Range Version 4M SRAM 512-kword x 8-bit REJ03C0067-0200Z Rev. 2.00 May.26.2004 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology	Original	R1LP0408C-I 512-kword REJ03C0067-0200Z 32-pin R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408C-5SI R1LP0408CSB-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI MAY26 R1LP0408CSP	PDF
M5M5256DFP-70LL*bm Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI Text: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns	Original	M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI	PDF
R1LP0408CSB-5SC Abstract: R1LP0408CSP-5SC R1LP0408C-C R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-7LC r1lp0408csb R1LP0408CSP5SC Text: R1LP0408C-C Series 4M SRAM 512-kword x 8-bit REJ03C0077-0200Z Rev. 2.00 May.26.2004 Description The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process	Original	R1LP0408C-C 512-kword REJ03C0077-0200Z 32-pin 32-pin R1LP0408CSB-5SC R1LP0408CSP-5SC R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-7LC r1lp0408csb R1LP0408CSP5SC	PDF

r1lv0108 Abstract: R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	R10PF0003ED0100 r1lv0108 R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR	PDF
R1LP0408C-I Abstract: R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI Text: R1LP0408C-I Series Wide Temperature Range Version 4 M SRAM 512-kword x 8-bit REJ03C0067-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology	Original	R1LP0408C-I 512-kword REJ03C0067-0100Z 32-pin R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI	PDF
K6X8008T2B-UF55 Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety	PDF