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    R1Q2A3618 Search Results

    R1Q2A3618 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    R1Q2A3618CBB-40IA0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM Visit Renesas Electronics Corporation
    R1Q2A3618CBB-40IB0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM Visit Renesas Electronics Corporation
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    R1Q2A3618 Price and Stock

    Renesas Electronics Corporation R1Q2A3618BBG40RB0B000

    36-MBIT QDRII SRAM 2-WORD BURST QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165
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    ComSIT USA R1Q2A3618BBG40RB0B000 196
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    R1Q2A3618 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1Q2A3618 Renesas Technology 36-Mbit QDR II SRAM 2-word Burst Original PDF

    R1Q2A3618 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1Q2A3618ABG-40R

    Abstract: R1Q2A3618ABG-50R R1Q2A3609 R1Q2A3618 R1Q2A3636 R1Q2A3636ABG-40R R1Q2A3636ABG-50R R1Q2A3636ABG-60R
    Text: R1Q2A3636/R1Q2A3618/R1Q2A3609 36-Mbit QDR II SRAM 2-word Burst REJ03C0294-0003 Preliminary Rev. 0.03 Jul. 31, 2007 Description The R1Q2A3636 is a 1,048,576-word by 36-bit, the R1Q2A3618 is a 2,097,152-word by 18-bit, and the R1Q2A3609 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using


    Original
    R1Q2A3636/R1Q2A3618/R1Q2A3609 36-Mbit REJ03C0294-0003 R1Q2A3636 576-word 36-bit, R1Q2A3618 152-word 18-bit, R1Q2A3609 R1Q2A3618ABG-40R R1Q2A3618ABG-50R R1Q2A3636ABG-40R R1Q2A3636ABG-50R R1Q2A3636ABG-60R PDF

    R1Q2A3618BBG

    Abstract: No abstract text available
    Text: R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 36-Mbit QDR II SRAM 2-word Burst REJ03C0341-0001 Preliminary Rev. 0.01 Jan. 31, 2008 Description The R1Q2A3636B is a 1,048,576-word by 36-bit, the R1Q2A3618B is a 2,097,152-word by 18-bit, and the R1Q2A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original
    R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 36-Mbit REJ03C0341-0001 R1Q2A3636B 576-word 36-bit, R1Q2A3618B 152-word 18-bit, R1Q2A3609B R1Q2A3618BBG PDF

    Untitled

    Abstract: No abstract text available
    Text: R1Q2A3636/R1Q2A3618/R1Q2A3609 36-Mbit QDR II SRAM 2-word Burst REJ03C0294-0002 Preliminary Rev. 0.02 Feb. 22, 2007 Description The R1Q2A3636 is a 1,048,576-word by 36-bit, the R1Q2A3618 is a 2,097,152-word by 18-bit, and the R1Q2A3609 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using


    Original
    R1Q2A3636/R1Q2A3618/R1Q2A3609 36-Mbit REJ03C0294-0002 R1Q2A3636 576-word 36-bit, R1Q2A3618 152-word 18-bit, R1Q2A3609 PDF

    2L TRANSISTOR

    Abstract: marking sa R1Q2A3618 R1Q2A3618BBG-40R R1Q2A3636B R1Q2A3636BBG-40R R1Q2A3636BBG-50R R1Q2A3636BBG-60R renesas sram marking code
    Text: R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 36-Mbit QDR II SRAM 2-word Burst REJ03C0341-0003 Preliminary Rev. 0.03 Apr. 11, 2008 Description The R1Q2A3636B is a 1,048,576-word by 36-bit, the R1Q2A3618B is a 2,097,152-word by 18-bit, and the R1Q2A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original
    R1Q2A3636B/R1Q2A3618B/R1Q2A3609B 36-Mbit REJ03C0341-0003 R1Q2A3636B 576-word 36-bit, R1Q2A3618B 152-word 18-bit, R1Q2A3609B 2L TRANSISTOR marking sa R1Q2A3618 R1Q2A3618BBG-40R R1Q2A3636BBG-40R R1Q2A3636BBG-50R R1Q2A3636BBG-60R renesas sram marking code PDF

    R1Q2A3618BBG-40R

    Abstract: R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R
    Text: 90nm 36Mbit QDR -II & DDR-II SRAMs High-speed memory for Gigabit Ethernet networking The expanded range of standardscompliant, fast SRAMs in advanced 90nm technology offers more design solutions for high-speed packet buffering and packet look-up in Gigabit Ethernet networking


    Original
    36Mbit 36Mbit R1Q2A3618BBG-40R R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R PDF

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


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    REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI PDF