RENESAS MARKING CQ
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QAA4436RBG
R1QAA4418RBG
144-Mbit
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
165-pin
RENESAS MARKING CQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QAA4436RBG
R1QAA4418RBG
144-Mbit
R10DS0137EJ0201
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
|
Original
|
R1Q4A4436RBG,
R1Q4A4418RBG
144-Mbit
R10DS0146EJ0101
R1Q4A4436RBG
304-word
36-bit
R1Q4A4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QLA4436RBG,
R1QLA4418RBG
144-Mbit
R10DS0144EJ0100
R1QLA4436RBG
304-word
36-bit
R1QLA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QEA4436RBG,
R1QEA4418RBG
144-Mbit
R10DS0142EJ0100
R1QEA4436RBG
304-word
36-bit
R1QEA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QHA4436RBG
R1QHA4418RBG
144-Mbit
R10DS0145EJ0100
304-word
36-bit
R1QHA4418RBG
608-word
18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QJA72 / R1QMA72 Series R1QJA7236ABB / R1QJA7218ABB R1QMA7236ABB / R1QMA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0174EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QJA72
R1QMA72
R1QJA7236ABB
R1QJA7218ABB
R1QMA7236ABB
R1QMA7218ABB
72-Mbit
A7236
152-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QHA72 / R1QLA72 Series R1QHA7236ABG / R1QHA7218ABG R1QLA7236ABG / R1QLA7218ABG 72-Mbit DDRII+ SRAM 2-word Burst R10DS0184EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QHA72
R1QLA72
R1QHA7236ABG
R1QHA7218ABG
R1QLA7236ABG
R1QLA7218ABG
72-Mbit
A7236
152-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABB / R1QAA7218ABB R1QDA7236ABB / R1QDA7218ABB 72-Mbit QDR II+ SRAM 4-word Burst R10DS0169EJ0011 Rev. 0.11 2013.01.15 Description
|
Original
|
0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABB
R1QAA7218ABB
R1QDA7236ABB
R1QDA7218ABB
72-Mbit
A7236
152-word
|
PDF
|
date code marking samsung
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG R1QDA7236ABG / R1QDA7218ABG 72-Mbit QDR II+ SRAM 4-word Burst R10DS0180EJ0011 Rev. 0.11 2013.01.15 Description
|
Original
|
0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QDA7236ABG
R1QDA7218ABG
72-Mbit
A7236
152-word
date code marking samsung
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q4A4436RBG / R1Q4A4418RBG Series Preliminary R1Q4A4436RBG Series R1Q4A4418RBG Series R1Q4A4409RBG Series R10DS0188EJ0011 144-Mbit DDRII SRAM 2-word Burst Preliminary Rev. 0.11b 2012.06.05 Description The R1Q4A4436 is a 4,194,304-word by 36-bit and the R1Q4A4418 is a 8,388,608-word by 18-bit synchronous
|
Original
|
R1Q4A4436RBG
R1Q4A4418RBG
R1Q4A4409RBG
R10DS0188EJ0011
144-Mbit
R1Q4A4436
304-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q6A7236ABB / R1Q6A7218ABB Series R1Q6A7236ABB R1Q6A7218ABB 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0168EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1Q6A7236ABB
R1Q6A7218ABB
R1Q6A7218ABB
72-Mbit
R1Q6A7236
152-word
36-bit
R1Q6A7218
304-word
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72DM4 R1Q5A7236ABB / R1Q5A7218ABB Series R1Q5A7236ABB R1Q5A7218ABB 72-Mbit DDRII SRAM 4-word Burst R10DS0167EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
|
Original
|
72DM4
R1Q5A7236ABB
R1Q5A7218ABB
R1Q5A7218ABB
72-Mbit
R1Q5A7236
152-word
36-bit
R1Q5A7218
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QKA4436RBG
R1QKA4418RBG
144-Mbit
R10DS0138EJ0201
304-word
36-bit
R1QKA4418RBG
608-word
18-bit
|
PDF
|
|
R1QDA4436RBG
Abstract: No abstract text available
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QDA4436RBG
R1QDA4418RBG
144-Mbit
R10DS0136EJ0201
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
|
PDF
|
KA7218
Abstract: No abstract text available
Text: R1Q2A7236ABG / R1Q2A7218ABG / R1Q2A7209ABG Series R1Q2A7236ABG R1Q2A7218ABG R1Q2A7209ABG 72-Mbit QDR II SRAM 2-word Burst R10DS0175EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q2A7236ABG
R1Q2A7218ABG
R1Q2A7209ABG
R1Q2A7209ABG
72-Mbit
R1Q2A7236
152-word
36-bit,
KA7218
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1GAA72 / R1QKA72 Series R1QGA7236ABB / R1QGA7218ABB R1QKA7236ABB / R1QKA7218ABB 72-Mbit QDR II+ SRAM 4-word Burst R10DS0172EJ0011 Rev. 0.11 2013.01.15 Description
|
Original
|
0000--QDRII+
R1GAA72
R1QKA72
R1QGA7236ABB
R1QGA7218ABB
R1QKA7236ABB
R1QKA7218ABB
72-Mbit
A7236
152-word
|
PDF
|
LA7218
Abstract: No abstract text available
Text: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG R1QEA7236ABG / R1QEA7218ABG 72-Mbit DDRII+ SRAM 2-word Burst R10DS0181EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QBA72
R1QEA72
R1QBA7236ABG
R1QBA7218ABG
R1QEA7236ABG
R1QEA7218ABG
72-Mbit
A7236
152-word
36-bit
LA7218
|
PDF
|
A4418
Abstract: No abstract text available
Text: R1QHA44*RBG / R1QLA44*RBG Series Preliminary R1QBA4436RBG / R1QBA4418RBG / R1QBA4409RBG R1QEA4436RBG / R1QEA4418RBG / R1QEA4409RBG R1QHA4436RBG / R1QHA4418RBG / R1QHA4409RBG R1QLA4436RBG / R1QLA4418RBG / R1QLA4409RBG R10DS0190EJ0011 Preliminary Rev. 0.11b
|
Original
|
R1QHA44*
R1QLA44*
R1QBA4436RBG
R1QBA4418RBG
R1QBA4409RBG
R1QEA4436RBG
R1QEA4418RBG
R1QEA4409RBG
R1QHA4436RBG
R1QHA4418RBG
A4418
|
PDF
|
marking code 1p
Abstract: No abstract text available
Text: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
|
Original
|
72QM2
R1Q3A7236ABG
R1Q3A7218ABG
R1Q3A7218ABG
72-Mbit
R1Q3A7236
152-word
36-bit
R1Q3A7218
marking code 1p
|
PDF
|
date code marking samsung
Abstract: No abstract text available
Text: R1QBA72 / R1QEA72 Series R1QBA7236ABB / R1QBA7218ABB R1QEA7236ABB / R1QEA7218ABB 72-Mbit DDRII+ SRAM 2-word Burst R10DS0170EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QBA72
R1QEA72
R1QBA7236ABB
R1QBA7218ABB
R1QEA7236ABB
R1QEA7218ABB
72-Mbit
A7236
152-word
36-bit
date code marking samsung
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72DM4 R1Q5A7236ABG / R1Q5A7218ABG Series R1Q5A7236ABG R1Q5A7218ABG 72-Mbit DDRII SRAM 4-word Burst R10DS0178EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
|
Original
|
72DM4
R1Q5A7236ABG
R1Q5A7218ABG
R1Q5A7218ABG
72-Mbit
R1Q5A7236
152-word
36-bit
R1Q5A7218
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1Q6A7236ABG
R1Q6A7218ABG
R1Q6A7218ABG
72-Mbit
R1Q6A7236
152-word
36-bit
R1Q6A7218
304-word
|
PDF
|
R1QDA4418RBG-19IB0
Abstract: RENESAS MARKING CQ RENESAS Marking is "cq" RENESAS MARKING AB
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
|
Original
|
R1QDA4436RBG
R1QDA4418RBG
144-Mbit
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
165-pin
R1QDA4418RBG-19IB0
RENESAS MARKING CQ
RENESAS Marking is "cq"
RENESAS MARKING AB
|
PDF
|