2SC3356
Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
2SC3356
marking r25 sot23
r25 marking
NPN R25
2SC3356 R25 sot-23
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Untitled
Abstract: No abstract text available
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
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2SC3356R25
Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings
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2SC3356
2SC3356
OT-23
2SC3356R25
2SC3356R
2SC3356 r25
r25 marking
R25 2sc3356
2SC3356 R25 sot-23
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2SC3356 Application Note
Abstract: 2sc3356 2SC3356R25 2SC3356 r25
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability
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2SC3356
2SC3356
OT-23
2SC3356 Application Note
2SC3356R25
2SC3356 r25
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R24 marking
Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
Text: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃
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2SC3356
OT-323
R24 marking
2SC3356
NPN R25
Transistor R25
r25 transistor
SOT R25
marking r25 NPN
R24 marking DATASHEET
R25 2sc3356
r25 marking
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage
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OT-323
OT-323
2SC3356
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transistor code R24
Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS
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2SC3356W
OT-323
R23/R24/R25
200taxial
BL/SSSTF001
transistor code R24
R24 marking code transistor
SOT R23
Transistor R25
r25 transistor
transistor R24
r23 transistor
SOT R25
2SC3356W
R24 transistor
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2SC3356
Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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NE85633
2SC3356
NE85633-A
2SC3356
NE85633-T1B-A
2SC3356-T1B
R23/Q
R24/R
R25/S
PU10209EJ02V0DS
R25 2sc3356
marking r25 NPN
PU10209EJ02V0DS
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GE 2646
Abstract: 2SC3356 r25 CD/GE S 2646
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.
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OCR Scan
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2SC3356
2SC3356
S22e-FREQUENCY
GE 2646
2SC3356 r25
CD/GE S 2646
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transistor NEC D 588
Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
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2SC3356
2SC3356
transistor NEC D 588
IC nec 555
nec d 588
marking 544 low noise amplifier
ZS12
nec 501 t
nec marking 2sc3356
R25 2sc3356
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SOT R23
Abstract: marking R24 2SC3356 SOT R25 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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OT-23-3L
OT-23-3L
2SC3356
width350s,
SOT R23
marking R24
2SC3356
SOT R25
r25 q
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SOT R23
Abstract: 2SC3356 marking R24 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.
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OT-323
OT-323
2SC3356
width350s,
SOT R23
2SC3356
marking R24
r25 q
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2SC3356
Abstract: 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q
Text: 2SC3356 SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range
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2SC3356
OT-23-3L
2SC3356
2SC3356 to 92
NPN R25
R24 marking DATASHEET
marking r25 NPN
r25 q
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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OT-23-3L
OT-23-3L
2SC3356
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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OT-323
OT-323
2SC3356
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3
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2SC3356
OT-23
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Untitled
Abstract: No abstract text available
Text: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SC3356
OT-23
10-Jan-08
OT-23
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2SC3356 SMD
Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.
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2SC3356
OT-23
2SC3356 SMD
marking r25 sot23
NPN R25
SOT R23
Transistor R25 smd
2SC335
r25 marking
2SC3356
R24 marking DATASHEET
SMD R25
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2SC3356
Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
Text: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain
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2SC3356
OT-23
16-Oct-2009
2SC3356
R24 marking DATASHEET
r25 marking
2SC3356 Application Note
Low Noise uhf transistor
NPN R25
marking r25 sot23
r25 q
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2SC3356
Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC3356
2SC3356
IC nec 555
transistor 1431 T
marking 544 low noise amplifier
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marking r25
Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Text: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain
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2SC3356F
OT-323
01-June-2002
marking r25
transistor amplifier VHF/UHF
NPN R25
hFE CLASSIFICATION Marking 24
2SC33
Transistor R25
R24 marking code transistor
R24 marking DATASHEET
SOT R23
SOT R25
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1
2SC3356 s2p
2SC3356 Application Note
2SC3356
nec marking 2sc3356
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1B
2SC3356 s2p
2SC3356 Application Note
2SC3356-T1B
2SC3356
R24 marking DATASHEET
TRANSISTOR 2sc3356
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2SC3356 Application Note
Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
Text: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A
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2SC3356
OT-23
01-Jun-2002
2SC3356 Application Note
2SC3356
h 125 tam
SOT R23
marking r25 sot23
r25 q
2SC3356 R25 sot-23
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