Untitled
Abstract: No abstract text available
Text: •314 inch Solder pin angled high density with threaded lock and metal bracket Socket connector Plug connector 8 1— - t f ! -, r •\ Q IPVII | * 0 65 c Kat 1 i R4A Kat 1 i R5A B *0,25 A -0,76 B - 0,25 C 15 31,19
|
OCR Scan
|
|
PDF
|
XPC106ARX66CG
Abstract: XPC106ARX83DG XPC106ARX66CE 70H38N XPC106ARX66 transistor R2b XPC106ARX66CD xpc106arx XPC106 part marking id
Text: 106 BSDL Files Q: How do I tell which revision of the 106 I have? Also, which BSDL file goes with which revision? A: -Revision ID Marking Register BSDL Part Number Rev on part offset 0x08 file -XPC106ARX83DG
|
Original
|
----------------------------XPC106ARX83DG
70H38N
MPC106
XPC106ARX66CG
XPC106ARX66CE
70H10F
XPC106ARX66CD
XPC106ARX66CG
XPC106ARX83DG
XPC106ARX66CE
70H38N
XPC106ARX66
transistor R2b
XPC106ARX66CD
xpc106arx
XPC106
part marking id
|
PDF
|
lt1750
Abstract: 5518 ic 5518 DC729A DC831A LT5518 LT5518EUF LT5528 MO-220 5518f
Text: LT5518 1.5GHz–2.4GHz High Linearity Direct Quadrature Modulator U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5518 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal
|
Original
|
LT5518
CDMA2000,
17MHz
40MHz
500MHz
5518f
lt1750
5518
ic 5518
DC729A
DC831A
LT5518
LT5518EUF
LT5528
MO-220
5518f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LT5518 1.5GHz–2.4GHz High Linearity Direct Quadrature Modulator U DESCRIPTIO FEATURES High Input Impedance Version of the LT5528 Direct Conversion to 1.5GHz – 2.4GHz High OIP3: 22.8dBm at 2GHz Low Output Noise Floor at 20MHz Offset:
|
Original
|
LT5518
LT5528
20MHz
64dBc
14GHz
49dBm
16-Lead
17MHz
40MHz
500MHz
|
PDF
|
sec ka7815
Abstract: ML4812 Application note F41206-TC siemens rs 1003 philips 1n4148 diode transistor PN2222 suitable marking r4a ML4812
Text: www.fairchildsemi.com ML4812 Power Factor Controller Features Description • Precision buffered 5V reference ±0.5% • Current-input gain modulator reduces external components and improves noise immunity • Programmable ramp compensation circuit • 1A peak current totem-pole output drive
|
Original
|
ML4812
ML4812
ML4812CQ
ML4812IQ
ML4812CQ
ML4812IQ
ML4812CP
sec ka7815
ML4812 Application note
F41206-TC
siemens rs 1003
philips 1n4148 diode
transistor PN2222 suitable
marking r4a
|
PDF
|
PTC07DAAN
Abstract: SELF TAPPING SCREW Vs speed design ideas 146510CJ Connector, BNC, PCB Mount
Text: &7"-6"5*0/,*5'034"&9 &, . * $ 3 0 5 & $ / 0 - 0 : )551888"1&9.*$305&$)$0. "1&9 INTRODUCTION The EK22 evaluation kit is designed to provide a convenient way to breadboard design ideas for the SA56 PWM amplifiers.
|
Original
|
EVAL25
EK22U
PTC07DAAN
SELF TAPPING SCREW Vs speed
design ideas
146510CJ Connector, BNC, PCB Mount
|
PDF
|
C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R5
C3B Kemet
|
PDF
|
LD7550BBN
Abstract: ld7550 LD7550BBL marking r4a
Text: LD7550-B 12/22/2006 Green-Mode PWM Controller REV: 01a General Description Features The LD7550-B is a low cost, low startup current, current z mode PWM controller with green-mode power-saving High-Voltage CMOS Process with Excellent ESD protection the z Very Low Startup Current <20µA
|
Original
|
LD7550-B
LD7550-B
OT-26
LD7550-B-DS-01a
LD7550BBN
ld7550
LD7550BBL
marking r4a
|
PDF
|
C14A
Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
C14A
MRF374A
C12A
C12B
C13B
MRF374
RO3010
j310 vishay
J352
100WPEP
|
PDF
|
J239 mosfet transistor
Abstract: L1AB
Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
|
Original
|
MRF374A
MRF374A
J239 mosfet transistor
L1AB
|
PDF
|
MRF374A
Abstract: marking c14a l1a marking
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
marking c14a
l1a marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Document Number: MRF374A Rev. 5, 5/2006 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
|
PDF
|
marking c14a
Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
marking c14a
C14A
C13B
MRF374
MRF374A
RO3010
C12A
C12B
Vishay Dale 10 ohm resistorS
J352
|
PDF
|
ld7535
Abstract: 08SP005 2N60B UC3842 design with TL431 LD7535AB uu9.8
Text: LD7535/LD7535A 12/11/2007 Green-Mode PWM Controller with Integrated Protections Rev. 01c General Description Features The LD7535/LD7535A are low cost, low startup current, z current mode PWM controllers with green-mode powersaving operation. High-Voltage CMOS Process with Excellent ESD
|
Original
|
LD7535/LD7535A
LD7535/LD7535A
OT-26.
LD7535
LD7535A-DS-01c
LD7535A
08SP005
2N60B
UC3842 design with TL431
LD7535AB
uu9.8
|
PDF
|
|
part marking information vishay HD 1
Abstract: l1a marking MRF372R5
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372
part marking information vishay HD 1
l1a marking
MRF372R5
|
PDF
|
R10B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R5
R10B
|
PDF
|
marking c14a
Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
MRF374A
marking c14a
ATC - Semiconductor Devices
transistor j239
04 6274 045 000 800
|
PDF
|
marking c14a
Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
marking R5b
R5B transistor
RO3010
MRF372
marking L4A
C14A
device L1a marking
L1A marking on device
|
PDF
|
marking c14a
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
|
Original
|
MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
|
PDF
|
RO30
Abstract: mrf374
Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF374A
RO30
mrf374
|
PDF
|
TRANSISTOR a4
Abstract: marking code m4 SMD Transistor npn marking code m4 SMD Transistor marking code E5 SMD ic marking r4b diode smd diode schottky code marking M4 smd marking m4 R4B MARKING CODE M4 transistor car battery charger
Text: LM3655 Charge Control and Protection IC for embedded single cell Li-Ion/Polymer batteries 1.0 General Description 3.0 Features The LM3655 provides complete charge control, discharge control and battery safety of a single Lithium-Ion cell. It supports battery charging by using a variety of power supply
|
Original
|
LM3655
LM3655
CSP-9-111S2.
TRANSISTOR a4
marking code m4 SMD Transistor npn
marking code m4 SMD Transistor
marking code E5 SMD ic
marking r4b diode
smd diode schottky code marking M4
smd marking m4
R4B MARKING CODE
M4 transistor
car battery charger
|
PDF
|
R4A marking
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372
MRF372R5
R4A marking
|
PDF
|
RO3010
Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
|
Original
|
MRF372R3
MRF372R5
MRF372R3
MRF372
RO3010
marking c14a
marking R5b
device L1a marking
L1A marking on device
marking r4b diode
C14A
marking us capacitor pf l1
R4A print
MRF372
|
PDF
|
MV344I
Abstract: mv342i
Text: LMV341, LMV342, LMV344 www.ti.com SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012 RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS WITH SHUTDOWN Check for Samples: LMV341, LMV342, LMV344 FEATURES 1 • • • • • • • • • • • 2.7-V and 5-V Performance
|
Original
|
LMV341,
LMV342,
LMV344
SLOS447H
000-V
A114-A)
A115-A)
MV344I
mv342i
|
PDF
|