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    R6008FNJ Price and Stock

    ROHM Semiconductor R6008FNJTL

    MOSFET N-CH 600V 8A LPTS
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    DigiKey R6008FNJTL Reel 1,000 1,000
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    R6008FNJTL Cut Tape 751 1
    • 1 $3.7
    • 10 $2.561
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    R6008FNJTL Reel
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    R6008FNJTL Digi-Reel 1
    • 1 $3.7
    • 10 $2.561
    • 100 $3.7
    • 1000 $1.57458
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    Mouser Electronics R6008FNJTL 1,000
    • 1 $3.83
    • 10 $3.45
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    Verical R6008FNJTL 800 14
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    R6008FNJTL 100 67
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    Newark R6008FNJTL Cut Tape 1
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    • 100 $2.77
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    Bristol Electronics R6008FNJTL 1,000
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    Quest Components R6008FNJTL 800
    • 1 $3.6972
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    • 100 $3.6972
    • 1000 $2.0335
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    R6008FNJTL 80
    • 1 $2.98
    • 10 $2.98
    • 100 $1.639
    • 1000 $1.639
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    Chip1Stop R6008FNJTL Cut Tape 800
    • 1 $2.1
    • 10 $1.89
    • 100 $1.55
    • 1000 $1.33
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    R6008FNJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R6008FNJTL ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 8A LPTS Original PDF

    R6008FNJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6008FNJ SC-83) R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6008FNJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Fast reverse recovery time (trr) 4.5 1.0 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R6008FNJ R6008FNJ R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6008FNJ R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6008FNJ SC-83) R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6008FNJ SC-83) R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6008FNJ SC-83) R1120A