Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RA03M8087M Search Results

    RA03M8087M Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RA03M8087M Mitsubishi RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA03M8087M Mitsubishi SILICON MOS FET POWER AMPLIFIER Scan PDF
    RA03M8087M-01 Mitsubishi RF MOSFET MODULE - 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA03M8087M-01 Mitsubishi 806 - 870 MHz 3.6 W 7.2 V, 2 Stage Amp. for Portable Radio Original PDF
    RA03M8087M-01 Mitsubishi IC FET MISC 5H46S Original PDF
    RA03M8087M-101 Mitsubishi RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA03M8087M-E01 Mitsubishi RF MOSFET MODULE - 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA03M8087M-E01 Mitsubishi IC FET MISC 5H46S Original PDF

    RA03M8087M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA03M8087M-101

    Abstract: RA03M8087M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to


    Original     		PDF RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-101

    D408

    Abstract: RA03M8087M-E01 RA03M8087M RA03M8087M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 806- to 870-MHz range.


    Original     		PDF RA03M8087M 806-870MHz RA03M8087M 870-MHz av86-2-2833-9793 D408 RA03M8087M-E01 RA03M8087M-01

    "MOSFET Module"

    Abstract: 03M8087 marking GG RA03M8087M rara RA03M8087M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087 RA03M8087M 03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to


    Original     		PDF RA03M8087M 03M8087 806-870MHz RA03M8087M 870-MHz "MOSFET Module" 03M8087 marking GG rara RA03M8087M-101

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier


    Original     		PDF 806-870MHz RA03M8087M 870-MHz RA03M8087M

    RA03M8087M

    Abstract: RA03M8087M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to


    Original     		PDF RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-01

    RA03M8087M

    Abstract: RA03M8087M-101 transistor marking zg
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to


    Original     		PDF RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-101 transistor marking zg

    RA60H1317M1

    Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RA60H1317M1

    Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M

    RA03M8087M

    Abstract: No abstract text available
    Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA03M8087M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 806-870MHz 3.6W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS


    OCR Scan     		PDF RA03M8087M 806-870MHz 25deg 50ohm ZI-50ohm 806-870MHz1Zg 50ohm, RA03M8087M