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    RA13H8891MB Search Results

    RA13H8891MB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RA13H8891MB-01 Mitsubishi 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO Original PDF
    RA13H8891MB-01 Mitsubishi 880 - 915 MHz 13 W 12.5 V, 3 Stage Amp. for Mobile Radio Original PDF
    RA13H8891MB-101 Mitsubishi RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO Original PDF
    RA13H8891MB-E01 Mitsubishi 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO Original PDF

    RA13H8891MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE 13w

    Abstract: 13W MARKING
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz Oct2011 MARKING CODE 13w 13W MARKING

    transistor marking code H11S

    Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz transistor marking code H11S MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101

    RA13H8891MB-101

    Abstract: H11S MOSFET Power Amplifier Module 900Mhz
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz RA13H8891MB-101 H11S MOSFET Power Amplifier Module 900Mhz

    MOSFET Power Amplifier Module 900Mhz

    Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz MOSFET Power Amplifier Module 900Mhz H11S RF MOSFET MODULE RA13H8891MB-101

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz

    H11S

    Abstract: RA13H8891MB-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01

    H11S

    Abstract: RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz

    RA60H1317M1

    Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M

    Power Semiconductors

    Abstract: RF Power walkie talkie walkie talkie circuit reliability RA07M1317M RA45H4452M semiconductors walkie-talkie
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-030-E Date : 16th Jun. 2003 Rev. date : 22th.Jun. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products


    Original     		PDF AN-GEN-030-E RA45H4452M 520MHz RA13H8891MB 915MHz RA07M1317M 175MHz 520MHz AN-GEN030 Power Semiconductors RF Power walkie talkie walkie talkie circuit reliability RA07M1317M RA45H4452M semiconductors walkie-talkie

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RA60H1317M1

    Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    walkie-talkie

    Abstract: RF POWER RA07M1317M reliability Mitsubishi AA050MC01 RoHS 1000FIT RA45H4452M mitsubishi electric power semiconductors semiconductors
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-030-D Date : 16th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products


    Original     		PDF AN-GEN-030-D RA45H4452M 520MHz RA13H8891MB 915MHz RA07M1317M 175MHz 520MHz AN-GEN030 walkie-talkie RF POWER RA07M1317M reliability Mitsubishi AA050MC01 RoHS 1000FIT RA45H4452M mitsubishi electric power semiconductors semiconductors

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M