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    RAD HARD MOSFET P-CHANNEL 2A Search Results

    RAD HARD MOSFET P-CHANNEL 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RAD HARD MOSFET P-CHANNEL 2A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.30Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRM9230D, FRM9230R, FRM9230H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    1E14

    Abstract: 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL9230D FRL9230H FRL9230R PDF

    1E14

    Abstract: 2E12 FRM9230D FRM9230H FRM9230R
    Text: FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.30Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRM9230D, FRM9230R, FRM9230H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRM9230D FRM9230H FRM9230R PDF

    1E14

    Abstract: 2E12 FRS9230D FRS9230H FRS9230R
    Text: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.32Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRS9230D, FRS9230R, FRS9230H -200V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRS9230D FRS9230H FRS9230R PDF

    1E14

    Abstract: 2E12 FRL234R4 JANSR2N7278
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7278 FRL234R4 1000K 1E14 2E12 FRL234R4 JANSR2N7278 PDF

    1E14

    Abstract: 2E12 FRL230R4 JANSR2N7275
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7275 FRL230R4 1000K 1E14 2E12 FRL230R4 JANSR2N7275 PDF

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		JANSR2N7278 FRL234R4 1000K PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		JANSR2N7272 FRL130R4 1000K PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		JANSR2N7275 FRL230R4 1000K PDF

    FRL230

    Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7275 FRL230R4 1000K FRL230 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230 PDF

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET PDF

    st smd diode marking to3

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications


    Original     		STRH40N6 STRH40N6S st smd diode marking to3 PDF

    st smd diode marking to3

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite


    Original     		STRH40N6 STRH40N6S1 STRH40N6S st smd diode marking to3 PDF

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1 PDF

    integrated circuits equivalents list

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET PDF

    2E12

    Abstract: 2N7312D 2N7312H 2N7312R 100V 60A N CHANNEL MOSFET
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H 2N7312D, 2N7312R 2N7312H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 4A, -200V, RDS(on) = 1.32Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRS9230 2N7312D, 2N7312R 2N7312H -200V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7312D 2N7312H 2N7312R 100V 60A N CHANNEL MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.32£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRS9230D, FRS9230R, FRS9230H -200V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.30£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRM9230D, FRM9230R, FRM9230H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: íH HARRIS S E M I C O N D U C T O R FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 4A.-200V, RDS on = 1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRS9230D, FRS9230R, FRS9230H -200V, O-257AA 100KRAD 300KRAD 10OOKRAD 3000KRAD PDF

    Rad Hard mosfet p-channel 2A switch

    Abstract: No abstract text available
    Text: íH H A R R IS S E M I C O N D U C T O R FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.300 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRM9230D, FRM9230R, FRM9230H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard mosfet p-channel 2A switch PDF

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD 732UIS PDF

    Untitled

    Abstract: No abstract text available
    Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		FRL234R4 JANSR2N7278 1000K MIL-STD-750, MIL-S-19500, 500ms; PDF