M4Z32-BROOSH1
Abstract: M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W
Text: Non-volatile RAM and RTC Selection guide High density surface mount solutions 32Mb NVRAM LPS LPS LPS LPS 16Mb with parallel RTC RAM RAM LPS RAM T212 RAM RAM LPS RAM 2x 8Mb LPSRAMs M48T212 M40Z300 “Hatless” 4x 8Mb LPSRAMs Mix and match ST SUPERVISORs, LPSRAMs and SNAPHAT tops for a surface mount
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M48T212
M40Z300
M41ST85
M41ST95
SGNVRAM/0603
M4Z32-BROOSH1
M4Z28-BROOSH1
SOH28
m48t35
M4T28-BR12SH1
Zeropower
M40SZ100
M40SZ100W
M40Z111
M40Z300W
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Untitled
Abstract: No abstract text available
Text: 128Mb Mobile RAM http://www.elpida.com Description Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”. 128Mb Mobile RAM achieves low power consumption via three special low power functions, and extends the battery life in mobile applications. Additional advantages of 128Mb Mobile RAM are that it saves space in the
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128Mb
54-ball
256Mb
100MHz
133MHz
16-bit
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K7Z327285M
Abstract: No abstract text available
Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM
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K7Z327285M
512Kx72
512Kx72
11x19
00x10
00x18
K7Z327285M
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Untitled
Abstract: No abstract text available
Text: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features
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S71GL064A
16-bit)
1M/512K
TLC056)
S29GL064
S71GL064A80/S71GL064A08
S71GL064AA0/S71GL064A0A
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SA1127
Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Text: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM
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S71PL127JB0/S71PL129JB0/S71PL064JB0
16-bit)
S71PL-JB0
SA1127
SA1115
JEDEC Matrix Tray outlines
SA1117
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S71GL064AA0BFW
Abstract: spansion top marking spansion S29GL064 S29GL064
Text: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM S71GL064A based MCPs Cover Sheet Data Sheet (Advance Information)
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S71GL064A
16-bit)
1M/512K
S71GL064AA0BFW
spansion top marking
spansion S29GL064
S29GL064
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spansion S29GL064
Abstract: bfw 10 transistor S29GL064 S71GL064A S71GL064A08-0B S71GL064A08-0F S71GL064A80-0K S71GL064A80-0P s29glxxxa Stacked 4MB Flash and 1MB SRAM
Text: S71GL064A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL064A
16-bit)
1M/512K
spansion S29GL064
bfw 10 transistor
S29GL064
S71GL064A08-0B
S71GL064A08-0F
S71GL064A80-0K
S71GL064A80-0P
s29glxxxa
Stacked 4MB Flash and 1MB SRAM
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uPD4632312F9-BE95X-BT3
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
uPD4632312F9-BE95X-BT3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
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uPD4632312F9-BE95X-BT3
Abstract: uPD4632312-X
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
-B85X)
uPD4632312F9-BE95X-BT3
uPD4632312-X
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MPC456
Abstract: No abstract text available
Text: Solid State Disk Drive for PC/104 MPC456 Features ✓ Up to 4M of static RAM ✓ Up to 32M of Flash ✓ On-board battery backup for RAM in 1M blocks ✓ Off-board battery support ✓ Write protection for RAM in 1M blocks ✓ LEDs for disk access, write protect
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PC/104
MPC456
PC/104
MPC456
512KB
D0000
E0000
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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sram 256mb 64X
Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
sram 256mb 64X
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL256N
S71PL127J
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Mcp90
Abstract: MCP78 032J mcp68
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL
Mcp90
MCP78
032J
mcp68
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
48-ball
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power transistor tsd 4m
Abstract: 12 x 12 fbga thermal resistance
Text: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM
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CY7C1079DV33
32-Mbit
CY7C1079DV33
power transistor tsd 4m
12 x 12 fbga thermal resistance
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CY62177EV30
Abstract: CY62177EV30LL-55ZXI
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
I/O15)
CY62177EV30LL-55ZXI
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Untitled
Abstract: No abstract text available
Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns
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CY62177EV30
32-Mbit
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Untitled
Abstract: No abstract text available
Text: CY62177EV18 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns
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CY62177EV18
32-Mbit
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S71PL064JA0
Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S71PL064JA0
S71PL064JB0
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
PL032J
Spansion s29pl127j
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