RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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MAR 527 transistor
Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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Original
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PDF
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
MAR 527 transistor
RD07MVS1B-101
transistor MAR 439
RD07MVS1B
RD07MVS1
T112
mar 640 MOSFET TRANSISTOR
mar 649 MOSFET TRANSISTOR
T06 transistor
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rd07mvs1b101
Abstract: 3M Touch Systems D07MVS1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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Original
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PDF
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
rd07mvs1b101
3M Touch Systems
D07MVS1
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GP4060
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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Original
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PDF
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
Oct2011
GP4060
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RD07MVS1B
Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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Original
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PDF
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
RD07MVS1B
transistor t06 19
RD07MVS1B-101
RD07MVS1
T112
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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Original
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PDF
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RD07MVS1B
175MHz
520MHz
RD07MVS1
RD07MVS1B
520MHz
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