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    SMC Diode Solutions MBRD10100CT

    DIODE ARRAY SCHOTTKY 100V DPAK
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    DigiKey MBRD10100CT Cut Tape 41,374 1
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    YAGEO Corporation RT0603BRD1010KL

    RES SMD 10K OHM 0.1% 1/10W 0603
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    DigiKey RT0603BRD1010KL Reel 30,000 10,000
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    Littelfuse Inc MBRD10100CT

    DIODE ARR SCHOTT 100V 5A TO252
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    DigiKey MBRD10100CT Digi-Reel 19,850 1
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    Diodes Incorporated MBRD10100CT-13

    DIODE ARR SCHOTT 100V 5A TO252-3
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    DigiKey MBRD10100CT-13 Cut Tape 15,383 1
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    YAGEO Corporation RT0603BRD101KL

    RES 1K OHM 0.1% 1/10W 0603
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    DigiKey RT0603BRD101KL Cut Tape 5,900 1
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    RD101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    flash memory vhdl code

    Abstract: ORCA fpga vhdl code for multiplexer 32 to 1 16bit microprocessor using vhdl vhdl code up down counter vhdl code for n bit generic counter vhdl code for multiplexer 8 to 1 using 2 to 1 vhdl code for memory controller vhdl code for multiplexer 16 to 1 using 4 to 1 in 4 bit microprocessor using vhdl software
    Text: Using a Lattice CPLD and Flash Memory to Configure an SRAM-Based FPGA October 2003 Reference Design RD1017 Introduction SRAM-based FPGA devices are volatile and require reconfiguration on power-up cycles. FPGA external configuration data must be held on a non-volatile device. For systems incorporating a microprocessor or host computer system, configuration data may be stored on a system’s local hard drive with a host-run application used to configure


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    PDF RD1017 TN1013, 1-800-LATTICE flash memory vhdl code ORCA fpga vhdl code for multiplexer 32 to 1 16bit microprocessor using vhdl vhdl code up down counter vhdl code for n bit generic counter vhdl code for multiplexer 8 to 1 using 2 to 1 vhdl code for memory controller vhdl code for multiplexer 16 to 1 using 4 to 1 in 4 bit microprocessor using vhdl software

    WB4500

    Abstract: telecom bus WB1500 OC48 ORSO82G5 ORT8850 RD1018 STS-48C 30A06 8850H
    Text: Telecom Bus Bridge for SONET Cross Connect March 2004 Reference Design RD1018 Introduction The Telecom Bus Interface TBI is an accepted industry standard that is commonly found in SONET/SDH systems. It is a parallel interface used for chip-to-chip communication on SONET line cards. A typical example illustrating the usefulness of the TBI is shown in Figure 1.


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    PDF RD1018 OC-12 WB1500 ORSO82G5 ORT8850 622Mbps 2488Mbps WB1501 WB4500 telecom bus WB1500 OC48 ORSO82G5 ORT8850 RD1018 STS-48C 30A06 8850H

    AN8037

    Abstract: vhdl GPCM 16 bit data bus using vhdl ALE signal in microprocessor VHDL code vhdl code for sdram controller MPC8260 MPC8555 MPC860 sdram pins detail flash memory vhdl code
    Text: ispGDX2 Multiple Port Interface March 2003 Reference Design RD1013 Introduction Motorola’s MPC8260 is a chip that contains a 64-bit PowerPC microprocessor and a versatile communications processor module CPM . The MPC8260 is used in a wide array of applications, especially those in the communications and networking markets. Examples include remote access servers, regional office routers, cellular base


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    PDF RD1013 MPC8260 64-bit AN2083 MPC860 AN8037 vhdl GPCM 16 bit data bus using vhdl ALE signal in microprocessor VHDL code vhdl code for sdram controller MPC8555 sdram pins detail flash memory vhdl code

    lattice machxo lcmxo1200c

    Abstract: 8B10B LC51024MB-52F484C LCMXO1200C-3T100C LFECP6E-5T144C LFXP2-5E-5M132C RD1012 K2801 set-3b k2371
    Text: 8b/10b Encoder/Decoder June 2010 Reference Design RD1012 Introduction Many serial data transmission standards utilize 8b/10b encoding to ensure sufficient data transitions for clock recovery. This reference design describes an encoder/decoder suitable for performing 8b/10b encoding/decoding


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    PDF 8b/10b RD1012 LC4256B-3T100C LC51024MB-52F484C 1-800-LATTICE lattice machxo lcmxo1200c 8B10B LCMXO1200C-3T100C LFECP6E-5T144C LFXP2-5E-5M132C RD1012 K2801 set-3b k2371

    vhdl code for sdr sdram controller

    Abstract: vhdl sdram sdram verilog LC4256ZE sdram controller 4000ZE LCMXO2280C-3T100C MT48LC32M4A2 RD1010 signal path designer
    Text: SDR SDRAM Controller November 2010 Reference Design RD1010 Introduction Synchronous DRAM SDRAM has become a mainstream memory of choice in embedded system memory design due to its speed, burst access and pipeline features. For high-end applications using processors such as Motorola


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    PDF RD1010 1-800-LATTICE 4000ZE vhdl code for sdr sdram controller vhdl sdram sdram verilog LC4256ZE sdram controller LCMXO2280C-3T100C MT48LC32M4A2 RD1010 signal path designer

    fast page mode dram controller

    Abstract: ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller
    Text: Fast Page Mode DRAM Controller November 2010 Reference Design RD1014 Introduction Fast Page Mode DRAM FPM DRAM offers improved speed over standard DRAM since memory accesses performed within the same address row (page) require a precharge only for the first access. Subsequent accesses


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    PDF RD1014 MC68340, 1-800-LATTICE fast page mode dram controller ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller

    bc 106

    Abstract: EC20 LFEC20E-4F672C ORSPI4-2FE1036C RD1019 Verilog DDR memory model
    Text: QDR Memory Controller May 2005 Reference Design RD1019 Introduction QDR SRAM is a new memory technology defined by a number of leading memory vendors for high-performance and high-bandwidth communication applications. QDR is a synchronous pipelined burst SRAM with two separate


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    PDF RD1019 1-800-LATTICE bc 106 EC20 LFEC20E-4F672C ORSPI4-2FE1036C RD1019 Verilog DDR memory model

    decoder.vhd

    Abstract: LC4256ZE MC68340 vhdl code for 8-bit parity generator 180lt128 RAS20 4 bit microprocessor using vhdl
    Text: Fast Page Mode DRAM Controller February 2010 Reference Design RD1014 Introduction Fast Page Mode DRAM FPM DRAM offers improved speed over standard DRAM since memory accesses performed within the same address row (page) require a precharge only for the first access. Subsequent accesses


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    PDF RD1014 MC68340, 1-800-LATTICE decoder.vhd LC4256ZE MC68340 vhdl code for 8-bit parity generator 180lt128 RAS20 4 bit microprocessor using vhdl

    sdram verilog

    Abstract: sdram controller ispMACH M4A3 LC51024VG-5F676C LC5512MV-45F256C MT48LC32M4A2 RD1010 vhdl code for sdram controller 180lt128 vhdl code for sdr sdram controller
    Text: SDR SDRAM Controller January 2003 Reference Design RD1010 Introduction Synchronous DRAM SDRAM has become a mainstream memory of choice in embedded system memory design due to its speed, burst access and pipeline features. For high-end applications using processors such as Motorola


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    PDF RD1010 RD1007) M4A3-256/128-55YC 1-800-LATTICE sdram verilog sdram controller ispMACH M4A3 LC51024VG-5F676C LC5512MV-45F256C MT48LC32M4A2 RD1010 vhdl code for sdram controller 180lt128 vhdl code for sdr sdram controller

    RD10161

    Abstract: No abstract text available
    Text: T&B Catalog Number: UPC Number: Description: RD10161 Status: Active 78621083033 Insulated Nylon Ring Terminal For Wire Range 8AN Stud Size #8, Red WEB_USE US Cutsheet PDF Catalog Link http://www-public.tnb.com/contractor/docs/ stakon.pdf Features Funneled Barrel Entry, Deep Internal Serrations,


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    PDF RD10161 ERG4007 wsd-000207 E9809 3B-50 RD10161

    vhdl sdram

    Abstract: LC4256ZE LFXP2-5E LCMXO2280C-3T100C sdram controller 4000ZE LFECP33E-5F484C MT48LC32M4A2 RD1010 ispLSI5512VE
    Text: SDR SDRAM Controller February 2010 Reference Design RD1010 Introduction Synchronous DRAM SDRAM has become a mainstream memory of choice in embedded system memory design due to its speed, burst access and pipeline features. For high-end applications using processors such as Motorola


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    PDF RD1010 1-800-LATTICE 4000ZE vhdl sdram LC4256ZE LFXP2-5E LCMXO2280C-3T100C sdram controller LFECP33E-5F484C MT48LC32M4A2 RD1010 ispLSI5512VE

    BC 106

    Abstract: No abstract text available
    Text: QDR Memory Controller May 2004 Reference Design RD1019 Introduction QDR SRAM is a new memory technology defined by a number of leading memory venders for high-performance and high-bandwidth communication applications. QDR is a synchronous pipelined burst SRAM with two separate


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    PDF RD1019 178MHz 32-bit, 16-bit 1-800-LATTICE BC 106

    8B10B

    Abstract: LFX1200B-03FE680C RD1012 8B10B ansi encoder KXY 23 lc4128v-5t100c K2371
    Text: 8b/10b Encoder/Decoder November 2002 Reference Design RD1012 Introduction Many serial data transmission standards utilize 8b/10b encoding to ensure sufficient data transitions for clock recovery. This reference design describes an encoder/decoder suitable for performing 8b/10b encoding/decoding


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    PDF 8b/10b RD1012 LC4128V-5T100C 5000MX LC5512MV-5Q208C LFX1200B-03FE680C OR4E02-3BA352 8B10B LFX1200B-03FE680C RD1012 8B10B ansi encoder KXY 23 lc4128v-5t100c K2371

    lfxp2-40e

    Abstract: LVCMOS25 LD48 LFXP2-17E-5FTN256C HB1004 ispLEVER project Navigator route place LFXP2-5E-5QN IPUG35 LFXP2-8E
    Text: LatticeXP2 Family Handbook HB1004 Version 02.9, May 2011 LatticeXP2 Family Handbook Table of Contents May 2011 Section I. LatticeXP2 Family Data Sheet Introduction Features . 1-1


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    PDF HB1004 TN1144 TN1220. TN1143 lfxp2-40e LVCMOS25 LD48 LFXP2-17E-5FTN256C ispLEVER project Navigator route place LFXP2-5E-5QN IPUG35 LFXP2-8E

    EPC gen2

    Abstract: modelsim 6.3f EPC gen2 encoder 10670745 alt4gxb RD1018 EP4SE530 EP4SGX290 EP4SGX360 EP4SGX70
    Text: Quartus II Software Release Notes November 2008 Quartus II software version 8.1 This document provides late-breaking information about the following areas of this version of the Altera Quartus® II software. For information about memory, disk space, and system requirements, refer to the readme.txt file in your


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    PDF RN-01039-1 EPC gen2 modelsim 6.3f EPC gen2 encoder 10670745 alt4gxb RD1018 EP4SE530 EP4SGX290 EP4SGX360 EP4SGX70

    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


    OCR Scan
    PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M

    226 20K

    Abstract: Computer Conversions Corporation SD109 Computer Conversions Corporation DSL40-L-1 synchro conversion 26VRMS Synchro to bcd synchro to dc angle CTJ3 MIL-E-5272
    Text: COMPUTER CONVERSIONS E31D Ô D D CORP 0DQ 0471 C O M PU TER C onversons I CCO 713 CONVERTERS C o r p o r a t i o n O R T H P O R T , N.Y. 11731 E A S TT N ÑD 516 261-3300 • T W X 510-226-0448 RIES S P E C IF IC A T IO N S D E S C R IP T IO N at 2 5 °C and rated supplies


    OCR Scan
    PDF 0DQ0471 MIL-E-5272, E-5400 T-21200 226 20K Computer Conversions Corporation SD109 Computer Conversions Corporation DSL40-L-1 synchro conversion 26VRMS Synchro to bcd synchro to dc angle CTJ3 MIL-E-5272

    T4013NK

    Abstract: T2513MK T1212MJ T2512MK T1010MJ tag t2512nk TAG triac t4012nk t2512nk T1213NJ T0610MJ
    Text: part N um ber D efin itio n ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 P0102DA X0102MA T4013NK T2513MK T1212MJ T2512MK T1010MJ tag t2512nk TAG triac t4012nk t2512nk T1213NJ T0610MJ

    TRIAC TAG 90

    Abstract: SCR tag 90 triac tag X0202DA TAG SCR SCR 4A 400 V S1610MH P0105AB X0102NA scr tag 12
    Text: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 P0102DA X0102MA TRIAC TAG 90 SCR tag 90 triac tag X0202DA TAG SCR SCR 4A 400 V S1610MH P0105AB X0102NA scr tag 12

    T2513MK

    Abstract: T1212MJ T1213NJ T2512NK T2512MK T1212NJ T1010MJ T0609MJ T4013NK T2513NK
    Text: part N um ber D efin itio n ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 T0609BJ T0610BJ T2513MK T1212MJ T1213NJ T2512NK T2512MK T1212NJ T1010MJ T0609MJ T4013NK T2513NK

    s1207dh

    Abstract: S1207MH S1207BH TRIAC TAG 90 S0402NH S0805NH opto diac X0303DG X0402DE S0802MH
    Text: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 P0102DA X0102MA s1207dh S1207MH S1207BH TRIAC TAG 90 S0402NH S0805NH opto diac X0303DG X0402DE S0802MH

    p0107db

    Abstract: TRIAC TAG 92 SCR TAG Semiconductors X0101MA P0107AA P0109AA TAG scr P0109DB tag semiconductors triacs RD101
    Text: part Number Definition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 P0109AA P0107AA p0107db TRIAC TAG 92 SCR TAG Semiconductors X0101MA TAG scr P0109DB tag semiconductors triacs

    scr 6A

    Abstract: scr tag 2 200 S1610BM scr tag 12 TAG scr S2510 SCR 10A tag semiconductors triacs S0805BM S0805DM
    Text: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 S0805BM S0805DM scr 6A scr tag 2 200 S1610BM scr tag 12 TAG scr S2510 SCR 10A tag semiconductors triacs

    T0505BM

    Abstract: T0810DM T0510DM T0810MM T1213MS RD101 T0505DM T1010MH TAG SCR T0505MM
    Text: p art N u m b e r D e fin it io n ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e


    OCR Scan
    PDF T1010MH: O-220 T0-18 T0-202-1 O-202-2 O-220 RD101 T0505BM T0505DM T0810DM T0510DM T0810MM T1213MS T1010MH TAG SCR T0505MM