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    RD60HUF Search Results

    RD60HUF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD60HUF1 Mitsubishi RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W Original PDF
    RD60HUF1 Mitsubishi Silicon MOSFET Power Transistor 520 MHz, 60 W Original PDF
    RD60HUF1 Mitsubishi MITSUBISHI RF POWER MOS FET Original PDF

    RD60HUF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD60HUF1-101

    Abstract: RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT
    Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD60HUF1 520MHz RD60HUF1 RD60HUF1-101 Oct2011 RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT

    transistor b 1624

    Abstract: b 1624 transistor transistor A 1568 MITSUBISHI RF POWER MOS FET Pch MOS FET 100OHM RD60HUF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:


    Original     		PDF RD60HUF1 520MHz 520MHz RD60HUF1 transistor b 1624 b 1624 transistor transistor A 1568 MITSUBISHI RF POWER MOS FET Pch MOS FET 100OHM

    RD60HUF1

    Abstract: 100OHM ZO-10 Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz 100OHM ZO-10 Rf power transistor mosfet

    100OHM

    Abstract: RD60HUF1 RD60HUF1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 100OHM RD60HUF1-101

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101

    RD60HUF1-101

    Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF1-101 Rf power transistor mosfet UHF transistor FET 100OHM PINw10 transistor A 1568 mitsubishi 250

    RD60HUF

    Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF mitsubishi rf 100OHM RD60HUF1-101

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION O B SE R V E PR EC A U T IO N S FOR HANDLING e l e t r o s t a t ic TENTATIVE MITSUBISHI RF POWER MOS FET RD60HUF1 SENSITIVE D E V IC E S OUTLINE DESCRIPTION DRAWING RDéOHUFï is a MO^J FJ3T type transistor specifically designed for UHF High power amplifiers applications-


    OCR Scan     		PDF RD60HUF1 520MHz 25deg Tc-25deg 520MHz RD60HUF

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837