C528 transistors
Abstract: C528 DIODE
Text: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353
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075BV0SS
C-527
IRFP350,
IRFP351,
IRFP352,
IRFP353
T-39-15
C-528
C528 transistors
C528 DIODE
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IRF3205 smd
Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
Text: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More
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IRF1104
IRF640N
IRF3205*
IRF1010N*
IRFZ48N*
IRCZ34
IRFZ46N*
IRCZ24
IRL1004
IRFZ44N*
IRF3205 smd
irf640* spice
regulator dpak
SOIC 8P
LDO 3.3
DAC Combo
irf3205 spice
ldo regulator
iru1010-25cp
IRU1050-CP
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TR C458
Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
IRFP040
O-S47AC
O-247AC
05BVDSS
C-459
IRFP040,
IRFP042
T-39-13
C-460
TR C458
transistors c458
IRFP040
C458 C
C459
TIL 220
L740
c458
c455
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es relay
Abstract: Avalanche cmos 600V N MOSFET T0-220
Text: International M Rectifier Power Integrated Circuits Power Switch IPS & SmartFET SIV-DCMOS For protected power MOSFET switches, International Rectifier employs a self isolated vertical DMOS/CMOS technology. This technology enables IR to provide low voltage (up to 60V) high
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O-220
es relay
Avalanche cmos
600V N MOSFET T0-220
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
AN-966.
-250V
AN-964D
HEXFET III - A new Generation of Power MOSFETs
irf 1490
AN-964D
irfc9024
AN-966
1000V P-channel MOSFET
application new hexfet
AN966
transistor 9527
IRFC210
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
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TO274
Abstract: aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012
Text: Application Note AN-1012 Mounting Considerations for International Rectifier’s Power Semiconductor Packages By Pamela Dugdale and Arthur Woodworth, International Rectifier Table of Contents Page Introduction .1
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AN-1012
TO274
aluminium pop rivet
WARTH
TO-273
SUPER-220
austerlitz
AN-1000
AN-1010
AN-1012
AN1012
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5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi
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IRFY9130CM
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AN-1031
Abstract: No abstract text available
Text: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2
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AN-1031
AN-1031
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Untitled
Abstract: No abstract text available
Text: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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IRFY9140CM
SS452
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dts200
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi
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IRF7316
Abstract: No abstract text available
Text: International Rectifier I R PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = -30 V Ros on = 0.058Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier
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IRF7316
C-134
C-135
IRF7316
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AN-1031
Abstract: TO-247 FULLPAK Package
Text: Application Note AN-1031 Lead Bending and Soldering Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Introduction This application note is intended to address the two most frequently asked
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AN-1031
AN-1031
TO-247 FULLPAK Package
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C641
Abstract: No abstract text available
Text: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize
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1413D
IRLMS5703
OT-23.
100ps
C641
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Untitled
Abstract: No abstract text available
Text: International jragj Rectifier HEXFET Power MOSFET • • • • • • 4655452 0015514 L12 mifiR PD-9.445C IRFP350 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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IRFP350
O-247
O-220
O-247
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Untitled
Abstract: No abstract text available
Text: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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SS452
IRFL210
OT-223
QD1S417
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1rfp9140
Abstract: No abstract text available
Text: International ^Rectifier MÛ55452 DD1SSSG bS3 HEXFET Power MOSFET INTERNATIONAL RECTIFIER PD-9.480C IINR IRFP9140 Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRFP9140
-100V
O-247
O-247
k50Kfi
1rfp9140
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IRFZ48N
Abstract: IRFz48N MOSFET
Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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irfpc30
Abstract: No abstract text available
Text: International k Rectifier 4Û554S2 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER 00155fei2 PD-9.596A IINR 3?S IRFPC30 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements
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554S2
00155fei2
IRFPC30
O-247
O-218
irfpc30
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f422
Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International
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0GGci400
T-39-09
G-382
f422
transistor f422
tr f422
G-377
IRFF423
358E
IRFF420
IRFF421
IRFF422
420 Diode 2ba
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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hexsense
Abstract: IRCP054 equivalent
Text: 4655M5E 0D14b00 Gli International i-R Rectifier HEXFET Power MOSFET IINR PD-9.733 IRCP054 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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4655M5E
0D14b00
IRCP054
0014b07
hexsense
IRCP054 equivalent
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