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    EPB018A5-70

    Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
    Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180


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    PDF EPB018A5 3x180 320X290 EPB018A7 EPB018A9 EPB025A EPB018A5-70 EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580

    RC TOY CAR CIRCUIT DIAGRAM

    Abstract: toy car RC circuit diagram 13157 AMIC TECHNOLOGY 1315 A132000 A132000H RC Toy Car
    Text: A132000 ADPCM SOUND CONTROLLER Preliminary Document Title ADPCM SOUND CONTROLLER Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue December 14, 1999 Preliminary December, 1999, Version 0.0 AMIC Technology, Inc. A132000 ADPCM SOUND CONTROLLER


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    PDF A132000 A132000 80-byte RC TOY CAR CIRCUIT DIAGRAM toy car RC circuit diagram 13157 AMIC TECHNOLOGY 1315 A132000H RC Toy Car

    sharp lcd 128 240

    Abstract: A31W33128
    Text: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:


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    PDF A31W33128 80/68-Series A31W33128 A31W33128C A31W33128T sharp lcd 128 240

    H5TQ2G63DFR

    Abstract: h5tq2g63
    Text: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark


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    PDF 204pin HMT312S6DFR6A 128Mx64 H5TQ2G63DFR h5tq2g63

    sharp lcd 128 240

    Abstract: A31W33128
    Text: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:


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    PDF A31W33128 80/68-Series A31W33128 A31W33128C A31W33128T sharp lcd 128 240

    Untitled

    Abstract: No abstract text available
    Text: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark


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    PDF 204pin HMT312S6DFR6C 128Mx64

    H5TQ2G63DFR

    Abstract: H5TQ2G63D
    Text: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.1 / Sep. 2011 1 Revision History Revision No. History Draft Date Remark


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    PDF 204pin HMT312S6DFR6C 075VTBD 128Mx64 H5TQ2G63DFR H5TQ2G63D

    H5TQ2G63D

    Abstract: H5TQ2G63
    Text: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark


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    PDF 204pin HMT312S6DFR6A 128Mx64 H5TQ2G63D H5TQ2G63

    Untitled

    Abstract: No abstract text available
    Text: ITEM Q 1TY DESC. 1 HOUSING 2 CONTACT 1 MATERIAL TREATMENT THERMOPLASTIC MEETING UL 94V- 0 MOLDED WHITE COPPER ALLOY PLATIN, 100-200U" TIN /LEAD PLATING O N TAIL CONTACT AREA PLATING REMARK 50-90u" NICKEL BASE SEE REMARK SEE BELOW. REMARK: 1 . PROD. NO.: EH


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    PDF 50-90u" 100-200U" HC96526 EH29291

    z837

    Abstract: No abstract text available
    Text: DESCRIPTION TTY 1 COVER 1 LCP, UL 94V-0 2 ‘ BASE 1 LCP, UL 94V—0 1 PPS, UL 04V-O ACTUATOR 3 CONTACT REMARK MATERIAL ITEM PHOSPHOR BRONZE ALLOY, GOLD PLATING 236 OVER NICKEL ON CONTACT AREA AND . 4 TIN/LEAD OVER NICKEL ON SOLDER TAIL REMARK: (1 PROD. NO.:


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    PDF EIA-5400000 EIA-54QBAAA EIA-5406000 EIA-540BAAA UMAY06A- C82571 z837

    Untitled

    Abstract: No abstract text available
    Text: KM736FV4021 KM718FV4021 PRELIMINARY 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Draft Date Remark Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format.


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    PDF KM736FV4021 KM718FV4021 128Kx36 256Kx18 50REF

    62256DLG-7L

    Abstract: No abstract text available
    Text: KM62256D Family CMOS SRAM Document Title « 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18th 1997 Design target 0.1 First revision


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    PDF KM62256D 32Kx8 KM62256DL/DLI 62256DL-L 62256DLI-L 62256D-4/5/7 62256DL/DLI 62256DL-L/DLI-L 62256DLG-7L

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. Draft Date History Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions


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    PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 100mA 1024K

    Untitled

    Abstract: No abstract text available
    Text: KM736V887 KM718V987 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document T itle 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision H is to ry Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics.


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    PDF KM736V887 KM718V987 256Kx36 512Kx18 512Kx18-Bit 1024K 17ELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616BV4002 Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993


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    PDF KM616BV4002 256Kx16 10/12/15ns 12/15/20ns 8/10/12ns

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


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    PDF KM64BV4002 10/12/15ns 12/15/20ns 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Draft Data Remark Rev. 0.0 Initial Draft Aug. 5. 1998


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    PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine 616V1002CZ 616V1002CF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format


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    PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA

    Untitled

    Abstract: No abstract text available
    Text: KM736V787 PRELIMINARY 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Burst SRAM Revision History Rev.No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, Feb. 11.19 9 8 Remark


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    PDF KM736V787 128Kx36 128Kx36-Bit 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format


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    PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA 55ATyp. 32ATyp 25ATyp

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters


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    PDF KM736V849 KM718V949 256Kx36 512KX18 512Kx18-Bit 450mA 420mA 150MHZ. 15ELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 256Kx18 Synchronous SRAM KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM Revision History Rev.No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, February. 11. 1998 Remark


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    PDF 256Kx18 KM718V887 256Kx18-Bit 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993


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    PDF KM616B4002 256Kx16 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at


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    PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA