EPB018A5-70
Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180
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EPB018A5
3x180
320X290
EPB018A7
EPB018A9
EPB025A
EPB018A5-70
EPB018A7-70
8664
EPB025A
EPB018A7
EPB018A9
EPB018A9-70
EPB025A-70
EPB018A5
1580
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RC TOY CAR CIRCUIT DIAGRAM
Abstract: toy car RC circuit diagram 13157 AMIC TECHNOLOGY 1315 A132000 A132000H RC Toy Car
Text: A132000 ADPCM SOUND CONTROLLER Preliminary Document Title ADPCM SOUND CONTROLLER Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue December 14, 1999 Preliminary December, 1999, Version 0.0 AMIC Technology, Inc. A132000 ADPCM SOUND CONTROLLER
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A132000
A132000
80-byte
RC TOY CAR CIRCUIT DIAGRAM
toy car RC circuit diagram
13157
AMIC TECHNOLOGY
1315
A132000H
RC Toy Car
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sharp lcd 128 240
Abstract: A31W33128
Text: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:
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A31W33128
80/68-Series
A31W33128
A31W33128C
A31W33128T
sharp lcd 128 240
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H5TQ2G63DFR
Abstract: h5tq2g63
Text: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark
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204pin
HMT312S6DFR6A
128Mx64
H5TQ2G63DFR
h5tq2g63
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sharp lcd 128 240
Abstract: A31W33128
Text: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:
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A31W33128
80/68-Series
A31W33128
A31W33128C
A31W33128T
sharp lcd 128 240
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Untitled
Abstract: No abstract text available
Text: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark
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204pin
HMT312S6DFR6C
128Mx64
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H5TQ2G63DFR
Abstract: H5TQ2G63D
Text: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.1 / Sep. 2011 1 Revision History Revision No. History Draft Date Remark
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204pin
HMT312S6DFR6C
075VTBD
128Mx64
H5TQ2G63DFR
H5TQ2G63D
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H5TQ2G63D
Abstract: H5TQ2G63
Text: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark
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204pin
HMT312S6DFR6A
128Mx64
H5TQ2G63D
H5TQ2G63
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Untitled
Abstract: No abstract text available
Text: ITEM Q 1TY DESC. 1 HOUSING 2 CONTACT 1 MATERIAL TREATMENT THERMOPLASTIC MEETING UL 94V- 0 MOLDED WHITE COPPER ALLOY PLATIN, 100-200U" TIN /LEAD PLATING O N TAIL CONTACT AREA PLATING REMARK 50-90u" NICKEL BASE SEE REMARK SEE BELOW. REMARK: 1 . PROD. NO.: EH
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50-90u"
100-200U"
HC96526
EH29291
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z837
Abstract: No abstract text available
Text: DESCRIPTION TTY 1 COVER 1 LCP, UL 94V-0 2 ‘ BASE 1 LCP, UL 94V—0 1 PPS, UL 04V-O ACTUATOR 3 CONTACT REMARK MATERIAL ITEM PHOSPHOR BRONZE ALLOY, GOLD PLATING 236 OVER NICKEL ON CONTACT AREA AND . 4 TIN/LEAD OVER NICKEL ON SOLDER TAIL REMARK: (1 PROD. NO.:
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EIA-5400000
EIA-54QBAAA
EIA-5406000
EIA-540BAAA
UMAY06A-
C82571
z837
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Untitled
Abstract: No abstract text available
Text: KM736FV4021 KM718FV4021 PRELIMINARY 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Draft Date Remark Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format.
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KM736FV4021
KM718FV4021
128Kx36
256Kx18
50REF
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62256DLG-7L
Abstract: No abstract text available
Text: KM62256D Family CMOS SRAM Document Title « 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18th 1997 Design target 0.1 First revision
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KM62256D
32Kx8
KM62256DL/DLI
62256DL-L
62256DLI-L
62256D-4/5/7
62256DL/DLI
62256DL-L/DLI-L
62256DLG-7L
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Untitled
Abstract: No abstract text available
Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. Draft Date History Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions
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KM736V889
KM718V989
256Kx36
512Kx18
512Kx18-Bit
130mA
120mA
100mA
1024K
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Untitled
Abstract: No abstract text available
Text: KM736V887 KM718V987 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document T itle 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision H is to ry Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics.
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KM736V887
KM718V987
256Kx36
512Kx18
512Kx18-Bit
1024K
17ELECTRONICS
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM616BV4002 Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993
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KM616BV4002
256Kx16
10/12/15ns
12/15/20ns
8/10/12ns
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Untitled
Abstract: No abstract text available
Text: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM64BV4002
10/12/15ns
12/15/20ns
32-SOJ-400
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Untitled
Abstract: No abstract text available
Text: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Draft Data Remark Rev. 0.0 Initial Draft Aug. 5. 1998
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KM616V1002C/CL,
KM616V1002CI/CLI
64Kx16
48-fine
616V1002CZ
616V1002CF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format
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KM616V4000BZ,
KM616U4000BZ
256Kx16
48-CSP
10/45mA
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Untitled
Abstract: No abstract text available
Text: KM736V787 PRELIMINARY 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Burst SRAM Revision History Rev.No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, Feb. 11.19 9 8 Remark
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KM736V787
128Kx36
128Kx36-Bit
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format
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KM616V4000BZ,
KM616U4000BZ
256Kx16
48-CSP
10/45mA
55ATyp.
32ATyp
25ATyp
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Untitled
Abstract: No abstract text available
Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters
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KM736V849
KM718V949
256Kx36
512KX18
512Kx18-Bit
450mA
420mA
150MHZ.
15ELECTRONICS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 256Kx18 Synchronous SRAM KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM Revision History Rev.No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, February. 11. 1998 Remark
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256Kx18
KM718V887
256Kx18-Bit
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993
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KM616B4002
256Kx16
44-SOJ-400
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at
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KM616V4000BZ,
KM616U4000BZ
256Kx16
48-CSP
10/45mA
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