RESEARCH PAPER AND GATE Search Results

RESEARCH PAPER AND GATE Result Highlights (5)

Part	Manufacturer	Description
DE6B3KJ151KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ471KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ152MN4A	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ101KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ331KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

RESEARCH PAPER AND GATE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Application of dsp in military science Abstract: TILE64 radar sensor specification Raytheon Company Text: White Paper Assessing FPGA DSP Benchmarks at 40 nm Introduction Benchmarking the performance of algorithms, devices, and programming methodologies is a well-worn topic among developers and research of high-performance computing appliances. Independent and partisan benchmark results are	Original		PDF
LIN VHDL source code Abstract: leon3 AC97 SD-Card holders leon3 processor vhdl vhdl code 7 segment display fpga Text: White Paper SEmulation: Turbocharging the FPGA Development Process Introduction With the SEmulator , Gleichmann Electronics Research introduces a new method of FPGA/ASIC design, which promise shorter development times and higher design security at a lower cost. With complex processor systems,	Original		PDF
SGCT Abstract: mitsubishi SGCT sGCT function WESTINGHOUSE ELECTRIC scr topologies pulse transformer driver IGBT APPLICATION westinghouse power rectifiers international rectifier GTO WESTINGHOUSE RECTIFIERS GTO thyristor 3000V 800A GTO thyristor driver Text: 896 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 37, NO. 3, MAY/JUNE 2001 A New Current-Source Converter Using a Symmetric Gate-Commutated Thyristor SGCT Navid R. Zargari, Member, IEEE, Steven C. Rizzo, Member, IEEE, Yuan Xiao, Associate Member, IEEE,	Original		PDF
JR 200 RF TRANSMITTER Abstract: IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band Text: A TRANSMITTER CHIP SET FOR WIRELESS TELEMETRY APPLICATIONS 2001 International Telemetry Conference Karina Osgood Lawrence W. Burke Jr. Andy Moysenko Amy Webb M/A-COM, Inc. Dennis Schneider Ronald Colangelo U.S. Army Simulation, Training & Instrumentation Command (STRICOM)	Original	ARL-TR-1206, JR 200 RF TRANSMITTER IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band	PDF
IRIG modulator Abstract: ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER Text: A TRANSMITTER CHIP SET FOR WIRELESS TELEMETRY APPLICATIONS Karina Osgood Lawrence W. Burke Jr. Andy Moysenko Amy Webb M/A-COM, Inc. Dennis Schneider Ronald Colangelo U.S. Army Simulation, Training & Instrumentation Command STRICOM Kenneth McMullen Robert Wert	Original	ARL-TR-1206, IRIG modulator ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER	PDF
BSI CMOS image sensor Abstract: FillFactory cmos transistor 0.35 um FillFactory cmos sensor KTC AL cmos sensor abstract 3E-07 2P3M Text: Brain slice imaging A 100x100 pixel CIS combining 40K frames per second and 14 bit dynamic range Tom Walschap * , Danny Scheffer * , F. Kubo * and M. Ichikawa * * FillFactory, Schaliënhoevedreef 20B, 2800 Mechelen, Belgium Tel: +32 – 0 15-446353, fax: +32 – (0)15-446344	Original	100x100 BSI CMOS image sensor FillFactory cmos transistor 0.35 um FillFactory cmos sensor KTC AL cmos sensor abstract 3E-07 2P3M	PDF
hot electron devices Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li	Original		PDF
IRIG 106 Abstract: Wireless telemetry IRIG MMIC POWER AMPLIFIER S-BAND 2W rf transmiter circuit image ARL-TR-1206 MMIC AMPLIFIER S-BAND 2W IRIG amplitude "silicon on sapphire" block diagram telemetry Text: OPTIMIZATION OF A MINATURE TRANSMITTER MODULE FOR WIRELESS TELEMETRY APPLICATIONS Karina Osgood Larry Burke Amy Webb John Muir Christina Dearstine Anthony Quaglietta M/A-COM, Inc. ABSTRACT M/A-COM, Inc. has previously developed a highly integrated transmitter chip set for wireless telemetry	Original	ARL-TR-1206, IRIG 106 Wireless telemetry IRIG MMIC POWER AMPLIFIER S-BAND 2W rf transmiter circuit image ARL-TR-1206 MMIC AMPLIFIER S-BAND 2W IRIG amplitude "silicon on sapphire" block diagram telemetry	PDF
LQ9D011 Abstract: LQ9D01 red and blue stripe diode HCFT V by one sharp TFT LQ9D sharp TFT LCD tv driver Text: Liquid Crystal Displays LCD Application Note AN EXAMINATION OF ACTIVE MATRIX TECHNOLOGIES AND COMPONENTS Harry Miller, Field Applications Engineer OBJECTIVE The purpose of this paper is to examine the different active matrix technologies and review the theory behind the different technologies because breakthroughs in the different technologies are happening	Original	2613-banchi, J63428 SMT92021 LQ9D011 LQ9D01 red and blue stripe diode HCFT V by one sharp TFT LQ9D sharp TFT LCD tv driver	PDF
Untitled Abstract: No abstract text available Text: OFFLINE GATE DRIVE TRANSFORMERS UL and C-UL recognized, TÜV approved components 3000 Vrms gate to drive winding test Useful operating frequency from 50 kHz to 500 kHz Most popular winding configurations Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C	Original	P0584 P0585	PDF
C227p Abstract: C227 Text: RF TRANSFORMER For Wideband RF Applications For single-ended to balanced applications Value-oriented construction Miniature surface mount package Excellent insertion loss Designed for CATV Distribution/Drop Amplifiers, Set Top Boxes and Home Gateways Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C	Original	CX2072 C227p C227	PDF
P507A Abstract: pe-63387 Text: MOSFET GATE DRIVE TRANSFORMERS International safety construction, VDE approved 3750 VRMS gate to drive winding test V DE Useful operating frequency from 20 kHz to 100 kHz Electrical Specifications @ 25°C — Operating Temperature 0°C to 70°C Part Number	Original	PE-63385 PE-63387* PE-63386 PE-63388 1446C) P507A pe-63387	PDF
Untitled Abstract: No abstract text available Text: 8818.102SAG.WP.MM05 2/18/99 11:12 AM Page 2 Table 1. Network Server Appliances Sample uses File serving, caching, proxy serving, gateways, load balancing, firewalls, e-mail Memory Fostering Innovation and Growth Typically large, such as 64MB with addressability of 4GB or greater	Original	100MB	PDF
Untitled Abstract: No abstract text available Text: OFFLINE GATE DRIVE TRANSFORMERS UL and C-UL recognized, TÜV approved components 3000 Vrms gate to drive winding test Useful operating frequency from 50 kHz to 500 kHz Most popular winding configurations Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C	Original	P0584 P0585	PDF

PE-68386 Abstract: p0544 transformer P0544 p0926 KT 926 PE68386 drive transformers KT 100 tube Text: DC/DC SURFACE MOUNT GATE DRIVE TRANSFORMERS For SELV Operation Low profile, small footprint 1500 Vdc isolation between gate and drive Designed to operate between 50 KHz and 500 KHz Electrical Specifications @ 25°C — Operating Temperature -30°C to 130°C	Original	PE-68386 P0926 P0544 PE-68386 p0544 transformer P0544 p0926 KT 926 PE68386 drive transformers KT 100 tube	PDF
13b1 zener Abstract: laptop display cross reference LQ9D011 sharp crt HCFT nAN YA LCD Sharp Memory LCDs 13B1 V by one sharp TFT sharp lcd cross reference Text: LCD Application Note Liquid Crystal Displays AN EXAMINATION OF ACTIVE MATRIX TECHNOLOGIES AND COMPONENTS OBJECTIVE The purpose of this paper is to examine the different active matrix technologies and review the theory behind the different technologies because breakthroughs in the different technologies are happening	Original	SMT92021 13b1 zener laptop display cross reference LQ9D011 sharp crt HCFT nAN YA LCD Sharp Memory LCDs 13B1 V by one sharp TFT sharp lcd cross reference	PDF
Untitled Abstract: No abstract text available Text: THT CURRENT SENSE TRANSFORMERS UL/C-UL recognized components 3000 Vrms gate to drive winding test Useful operating frequency from 50 kHz to 500 kHz Most popular winding configurations Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C	Original	P0581 P0582 P0583	PDF
usb flash drive circuit diagram sandisk Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : JUDY@sec.samsung.com SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.	Original	15-micron 256Mb 512Mb usb flash drive circuit diagram sandisk research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH	PDF
westinghouse transistors Abstract: No abstract text available Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,	Original	10-kV westinghouse transistors	PDF
lm328 Abstract: lm328 datasheet cmos testing abstract 8 pin LM328 ic HS9-139RH SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR Text: Low Dose Rate Testing of the Intersil HS9-139RH quad comparator April 2006 Nick van Vonno Intersil Corporation Abstract: This document provides a brief introduction to low dose rate effects including discussion of Intersil’s approach to testing and qualification issues. We then report	Original	HS9-139RH 100krad Cobalt-60 lm328 lm328 datasheet cmos testing abstract 8 pin LM328 ic SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR	PDF
reliability Abstract: symposium research paper and gate Text: a ADI Reliability Handbook Analog Devices presents many papers on quality and reliability at technical conferences, and publishes articles in many technical journals. Following is a list of some of the papers presented at these conferences. At the 1995 IEEE	Original		PDF
papers Abstract: conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine Text: NVSMW 2000 General Chairman Mike Fliesler Advanced Micro Devices, USA Technical Chairman Financial Chairman Arthur Wang Krishna Parat Hyundai Microelectronics, USA Intel, USA Workshop Administrators Tonya Johnson Hyundai Microelectronics, USA Sunday, February 13 ‘2000	Original	9-11AM, 30-2PM 30-10PM, 30-12PM, 12noon-2PM papers conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine	PDF
Mextram Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM Text: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de	OCR Scan	ED-32, Mextram GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM	PDF
lm 7803 Abstract: BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM Text: Gate current: Modeling, AL extraction and impact on RF performance R. van Langevelde, A.J. Schölten, R. Duffy, F.N. Cubaynes, M.J. Knitel and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742418; Fax: +31-40-2744113; E-mail: ronald.van.langevelde@philips.com	OCR Scan	B-3001 net/1999 292-IEDM lm 7803 BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM	PDF

RESEARCH PAPER AND GATE Search Results

RESEARCH PAPER AND GATE Result Highlights (5)

RESEARCH PAPER AND GATE Datasheets Context Search

Application of dsp in military science

LIN VHDL source code

SGCT

JR 200 RF TRANSMITTER

IRIG modulator

BSI CMOS image sensor

hot electron devices

IRIG 106

LQ9D011

Untitled

C227p

P507A

Untitled

Untitled

PE-68386

13b1 zener

Untitled

usb flash drive circuit diagram sandisk

westinghouse transistors

lm328

reliability

papers

Mextram

lm 7803