This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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MPF102 equivalent transistor
Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or
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AN211A/D
r14525
AN211A/D
MPF102 equivalent transistor
MPF102 JFET
AN211A
2N3797
mpf102 fet
2N4351
MPF102 Transistor
2N3797 equivalent
mpf102 application note
P-Channel Depletion Mode FET
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J120 MOSFET
Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
J120 MOSFET
J115 mosfet
AN211A
MRF175LU
VK200
MOSFET J140
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MOTOROLA LINEAR HF
Abstract: MRF175LV Nippon capacitors MRF175
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LV
MRF175LU/D*
MRF175LU/D
MOTOROLA LINEAR HF
Nippon capacitors
MRF175
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
10orola
MRF175LU
MRF175LU/D*
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inductor vk200
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
inductor vk200
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF175LV
VK200
J115 mosfet
Nippon capacitors
VK200 4B inductor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
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VK200 20/4B inductor
Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
VK200 20/4B inductor
VK200 inductor of high frequencies
VK200 4B inductor
100 watt hf mosfet 12 volt
IN 965 b zener diode
AN211A
MRF175LV
VK200
Nippon capacitors
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MRF5007
Abstract: AN211A AN215A AN721 430B-01 motorola an721 application
Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF5007/D
MRF5007
MRF5007
MRF5007/D*
AN211A
AN215A
AN721
430B-01
motorola an721 application
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Z7 DIODE
Abstract: motorola an215a application "RF power MOSFETs" transistor motorola 236 zener diode z10 AN211A AN215A AN721 MRF5007 MRF5007R1
Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA MRF5007 MRF5007R1 The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF5007/D
MRF5007
MRF5007R1
MRF5007
Z7 DIODE
motorola an215a application
"RF power MOSFETs"
transistor motorola 236
zener diode z10
AN211A
AN215A
AN721
MRF5007R1
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
AN211A
MPF102 JFET
MPF102 equivalent transistor
MPF102 Transistor
MPF102 JFET data sheet
2N3797
2N3797 equivalent
mpf102 fet
mpf102 equivalent P channel
2N4221 motorola
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2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
2N3797
MPF102 equivalent transistor
MPF102 JFET
mpf102 fet
2N3797 equivalent
2N4221 motorola
MPF102 Transistor
mpf102 application note
P-Channel Depletion Mode FET
JFET TRANSISTOR REPLACEMENT GUIDE
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UNELCO
Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
UNELCO
S11 zener diode
motorola MOSFET 935
AN211A
MRF275L
VK200
VK200 4B inductor
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MRF1550FNT1
Abstract: MRF1550NT1 FREESCALE PACKING mobile rf power amplifier transistor MRF1550N UHF A05T A113 AN211A AN215A AN721
Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 15, 6/2009 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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MRF1550N
MRF1550NT1
MRF1550FNT1
MRF1550NT1
MRF1550FNT1
FREESCALE PACKING
mobile rf power amplifier transistor
MRF1550N UHF
A05T
A113
AN211A
AN215A
AN721
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 15, 6/2009 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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MRF1550N
MRF1550NT1
MRF1550FNT1
MRF1550NT1
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arco mica trimmer
Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
O-247
65MHz
ARF461A
ARF461B
O-247
335nH
VK200-4B
ARF461A/B
arco mica trimmer
class B push pull power amplifier
class td amplifier
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ARF463A
Abstract: ARF463B VK200-4B rf power amplifier 100w VK200 ferrite choke
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
VK200-4B
rf power amplifier 100w
VK200 ferrite choke
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ARF460A/B
Abstract: No abstract text available
Text: ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF460A
ARF460B
O-247
65MHz
ARF460A
ARF460B
O-247
185nH
VK200-4B
ARF460A/B
ARF460A/B
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ARF462A
Abstract: ARF462B VK200-4B
Text: ARF462A ARF462B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF462A
ARF462B
O-247
65MHz
ARF462A
ARF462B
470nH
VK200-4B
ARF462A/B
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Untitled
Abstract: No abstract text available
Text: ARF462A ARF462B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF462A
ARF462B
O-247
65MHz
ARF462A
ARF462B
470nH
VK200-4B
ARF462A/B
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RD60HUF1-101
Abstract: RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT
Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3
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RD60HUF1
520MHz
RD60HUF1
RD60HUF1-101
Oct2011
RD60HUF
High frequency P MOS FET transistor
60W POWER AMPLIFIER CIRCUIT
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DL110
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
DL110
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF275L
VK200
sony+IMX+179
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 14, 10/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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MRF1550N
MRF1550NT1
MRF1550FNT1
MRF1550NT1
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MRF1550
Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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MRF1550N
MRF1550NT1
MRF1550FNT1
MRF1550NT1
MRF1550
FM LDMOS freescale transistor
MRF1550N UHF
AN721
MRF1550FNT1
AN215A
S11 zener diode
MRF1550N
VK200
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