RF PA 25 WATT Search Results

RF PA 25 WATT Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF PA 25 WATT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SD1272 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1272 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 25 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION	Original	SD1272 SD1272	PDF
MS1581 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1581 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS POUT = 4.0 WATTS GP = 7.0 dB MINIMUM GOLD METALLIZATION	Original	MS1581 MS1581	PDF
uhf tv power transistor 500 w Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1581 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 25 VOLTS POUT = 4.0 WATTS GP = 7.0 dB MINIMUM GOLD METALLIZATION	Original	MS1581 MS1581 uhf tv power transistor 500 w	PDF
MSC1400M Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025-1150 MHz 25:1 VSWR CAPABILITY POUT = 400 WATTS GP = 6.5 dB MINIMUM	Original	MSC1400M MSC1400M	PDF
transistor 1150 Abstract: MS2344 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2344 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025 - 1150 MHz GOLD METALIZATION POUT = 25 WATTS GP = 9.0 dB MINIMUM INTERNAL INPUT MATCHING	Original	MS2344 MS2344 transistor 1150	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1527 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features • • • • • • • • 400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 dB GAIN MINIMUM EMITTER BALLASTED	Original	MS1527 MS1527	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1600M RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM	Original	MSC1600M MSC1600M	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC1600M RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM	Original	MSC1600M MSC1600M	PDF
gp 845 Abstract: MS1579 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1579 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS Features • • • • • • • 470 - 860 MHz 25 VOLTS CLASS A OPERATION INTERNAL INPUT MATCHING POUT = 14 WATTS	Original	MS1579 MS1579 gp 845	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1579 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS Features • • • • • • • 470 - 860 MHz 25 VOLTS CLASS A OPERATION INTERNAL INPUT MATCHING POUT = 14 WATTS	Original	MS1579 MS1579	PDF
100 watts transistor s-band Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION	Original	MS2604 MS2604 MSC0858 100 watts transistor s-band	PDF
STR 80000 Abstract: GJM1555C1H4R7CB01E Text: ADVANCED DATA SHEET SKY65111-348LF: ISM 800–1000 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram 800–1000 MHz operation ● Output power greater than 33 dBm ● 3.2 V nominal operating voltage ● Integrated analog power control voltage, V	Original	SKY65111-348LF: SKY65111-348LF STR 80000 GJM1555C1H4R7CB01E	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET AP147-320: ISM 900 MHz Band 2-Watt InGaP HBT Power Amplifier Features Block Diagram 902–928 MHz operation ● Output power greater than 33 dBm ● 3.2 V nominal operating voltage ● Integrated analog power control voltage, V APC = 0.1–2.8 V	Original	AP147-320: AP147-320	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2228 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • 1090 MHz 50 VOLTS POUT = 75 WATTS GP = 9.2 dB MINMUM 10:1 VSWR CAPABILITY	Original	MS2228 MS2228	PDF

2n4427 MOTOROLA Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA	Original	2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559	PDF
2N3866A Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427 Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1004 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 50 VOLTS POUT = 250 WATTS GP = 14.5 dB MINIMUM IMD = -30 dB GOLD METALIZATION	Original	MS1004 MS1004	PDF
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427	PDF
Untitled Abstract: No abstract text available Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT	Original	SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz the-9421 DS110720	PDF
MS1004 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1004 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 50 VOLTS POUT = 250 WATTS GP = 14.5 dB MINIMUM IMD = -30 dB GOLD METALIZATION	Original	MS1004 MS1004	PDF
Untitled Abstract: No abstract text available Text: GaAs 1C 2 Watt High Linearity Positive Control SPDT Switch DC-2.0 GHz EBAlpha AS358-62 Features SSOP-8 • High Linearity 55 dBm IP3 @ 0.9 GHz ■ Low Insertion Loss (0.35 dB @ 0.9 GHz) 0.220 (5.60 mm) 0.197 (5.00 mm) ■ Antenna Changeover and T/R Cellular Switch	OCR Scan	AS358-62 AS358-62 AS358 3/98A	PDF
Untitled Abstract: No abstract text available Text: GaAs 1C 2 Watt High Linearity SPDT Switch DC-2.0 GHz EHAlpha AS116-59 Features MSOP-8 • High Linearity 55 dBm IP3 @ 0.9 GHz 0.0256 (0.65 mm) TYR ■ Low Insertion Loss (0.35 dB @ 0.9 GHz) ■ Low DC Power Consumption 0 .1 9 3 (4 .9 0 mm) REF ■ Small MSOP-8 Package	OCR Scan	AS116-59 AS116-59 3/98A	PDF
MA460 Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation Text: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE	OCR Scan	MA46021-MA46049 MA46030, MA460 APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation	PDF
Untitled Abstract: No abstract text available Text: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is	OCR Scan		PDF

RF PA 25 WATT Search Results

RF PA 25 WATT Result Highlights (5)

RF PA 25 WATT Datasheets Context Search

SD1272

MS1581

uhf tv power transistor 500 w

MSC1400M

transistor 1150

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gp 845

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100 watts transistor s-band

STR 80000

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2n4427 MOTOROLA

2N3866A

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2N4427

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MS1004

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MA460

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