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    RF POWER AMPLIFIER WITH S PARAMETERS Search Results

    RF POWER AMPLIFIER WITH S PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER WITH S PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier


    Original     		MRF19045R3 MRF19045SR3 PDF

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21085/D MRF21085R3 MRF21085SR3 MRF21085LSR3 MRF21085/D MRF21085 PDF

    motorola 5373

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21045R3 MRF21045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045R3 MRF21045SR3 motorola 5373 MRF21045 PDF

    J493

    Abstract: GX-0300-55-22
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier


    Original     		MRF19125 MRF19125S MRF19125SR3 J493 GX-0300-55-22 PDF

    MRF5S21090

    Abstract: 100B1R2BP
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090 100B1R2BP PDF

    mosfet 400 mhz

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045 MRF21045R3 MRF21045S MRF21045SR3 mosfet 400 mhz PDF

    100B2R0BP

    Abstract: MRF5S21090 dbc 4223 MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3
    Text: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21090L/D MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 100B2R0BP MRF5S21090 dbc 4223 MRF5S21090LSR3 PDF

    CRCW12061000FKTA

    Abstract: ad250 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 4, 12/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and


    Original     		MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 CRCW12061000FKTA ad250 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 PDF

    MARKING 2160

    Abstract: MARKING WB1 th 2190 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21085 MRF21085LSR3 MARKING 2160 MARKING WB1 th 2190 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 PDF

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21085 MRF21085LR3 PDF

    T495X106K035AS4394

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21085 MRF21085LSR3 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 PDF

    J294

    Abstract: TAJE226M035R 465B AN1955 MRF5S21150HR3 MRF5S21150HSR3 j246
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J294 TAJE226M035R 465B AN1955 MRF5S21150HSR3 j246 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 PDF

    MRF21045

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21045 Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045 MRF21045LR3 MRF21045LSR3 PDF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3 PDF

    MRF21045

    Abstract: MARKING WB1 AN1955 MRF21045LR3 MRF21045LSR3
    Text: Document Number: MRF21045 Rev. 12, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21045LR3 MRF21045LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045LR3 MRF21045 MARKING WB1 AN1955 MRF21045LSR3 PDF

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P21190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 4,12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6P21190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P21190HR6 PDF

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM 4941 LM4941 1.25 Watt Fully Differential Audio Power Amplifier With RF Suppressionand Shutdown T ex a s In s t r u m e n t s Literature Number: SNAS347B LM4941 Hoomer Audio Power Am plifier Series 1.25 W a tt Fully D ifferential A u d io P ow er A m p lifie r W ith RF


    OCR Scan     		LM4941 SNAS347B PDF

    Untitled

    Abstract: No abstract text available
    Text: LM 4884 LM4884 2.1W Differential Input, BTL Output Stereo Audio Amplifier with RF Suppression and Shutdown Texa s In s t r u m e n t s Literature Number: SNAS267B Sem iconductor October 5, 2011 B O O m r Audio Power Am plifier Series 2 .1W D ifferential Input, BTL O u tp u t S tereo A u d io A m p lifie r


    OCR Scan     		LM4884 SNAS267B LM4884 PDF