NTE359
Abstract: 8-32N
Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances
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NTE359
175MHz
175MHz
8-32-NC-3A
NTE359
8-32N
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16006
MRF16006
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030
MRF16030
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
equivalent transistor rf "30 mhz"
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TVU012
Abstract: 420 NPN Silicon RF Transistor ASI10646
Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.
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TVU012
TVU012
420 NPN Silicon RF Transistor
ASI10646
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TVU020
Abstract: RF Bipolar Transistor 2108-G ASI10648
Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband
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TVU020
TVU020
RF Bipolar Transistor
2108-G
ASI10648
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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NTE475
Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz
Text: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE475
NTE475
300MHz.
100mA,
100MHz
100kHz
175MHz
m21 sot23 transistor
RF NPN POWER TRANSISTOR 100MHz
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BLY93a
Abstract: No abstract text available
Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR
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BLY93A
30Vdc.
175MHzl
BLY93a
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UPB2060
Abstract: No abstract text available
Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed
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UPB2060
UPB2060
400mA
491w6
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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nec 2501
Abstract: ic nec 2501 NESG250134 2501 NEC
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification
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NESG250134
NESG250134-Tconductor
nec 2501
ic nec 2501
NESG250134
2501 NEC
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UPB1835
Abstract: TM35W
Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for
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UPB1835
UPB1835
TM35W
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NTE477
Abstract: No abstract text available
Text: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz
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NTE477
NTE477
175MHz
175MHz,
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MRF262
Abstract: MRF264 MRF260 MRF261
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N
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MRF261
O-220AB
MRF260
MRF262
MRF264
MRF261
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56590653B
Abstract: BH Rf transistor
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON
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56-590-65/3B
MRF492
56590653B
BH Rf transistor
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Motorola transistors MRF455
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —
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iF/15
VK200-20/4B,
56-590-65/3B
MRF455
Motorola transistors MRF455
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J476
Abstract: capacitor j476 NALCO
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package
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MRF2628
J476
capacitor j476
NALCO
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inductor vk200
Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF238
inductor vk200
VK200 INDUCTOR
MRF238
VK200-4B
VK200 4B inductor
vk200 rf choke
rasistor
marine radio
02CM
arco trimmer
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si diode 1N4007
Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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MRF6414
MRF6414PHT/D
MRF6414
MRF8414
si diode 1N4007
MRF841
MOTOROLA TRANSISTOR 935
150 watts power amplifier layout
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MRF449
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com mercial and amateur radio equipment to 30 MHz. •
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mrf226
Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited
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MRF226/D
MRF226
MRF226/D
mrf226
Allen-Bradley cb
MRF-226
15MH
K200
8-32NC-2
TRANSISTOR c 5568
TRANSISTOR motorola 838
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2sc4624
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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