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    RF TRANSISTOR 2.4 GHZ Search Results

    RF TRANSISTOR 2.4 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 2.4 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


    Original     		PDF

    NESG3031M14

    Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

    j 6815 transistor

    Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS

    TRANSISTOR J 6815 EQUIVALENT

    Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754

    transistor marking R57 ghz

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz

    transistor marking T1k ghz

    Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 NESG3031M05 NESG3031M05-A PU10414EJ04V0DS transistor marking T1k ghz 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14 NESG3031M14-T3 NESG3031M14-A NESG303ntrol

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    transistor marking T1k ghz

    Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 transistor marking T1k ghz NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K

    NESG3031M05-T1

    Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 NESG3031M05-T1 transistor marking T1k ghz NESG3031M05 NESG3031M05-A

    S21E2

    Abstract: 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION •Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.


    Original     		PDF 2SC2408 S21e2 200MHz; S21E2 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR

    transistor

    Abstract: rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION •Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS


    Original     		PDF 2SC2954 S21e2 500MHz transistor rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •


    Original     		PDF BFY182 Q62702F1608 QS9000 BFY182

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182 BFY182

    Untitled

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182

    SKY65050-372LF

    Abstract: unconditionally stable transistor high gain 2.4 ghz
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original     		PDF SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967G unconditionally stable transistor high gain 2.4 ghz

    s1409

    Abstract: murata REEL label lot number SKY65050-372LF
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original     		PDF SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967D s1409 murata REEL label lot number

    SKY65050-372LF

    Abstract: S1408 S1410 VT47 S1417
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original     		PDF SKY65050-372LF: SKY65050-372LF 200967E S1408 S1410 VT47 S1417

    schematic diagram receiver satellite

    Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original     		PDF SKY65050-372LF: SKY65050-372LF 200967F schematic diagram receiver satellite murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9

    SKY65050-372LF

    Abstract: No abstract text available
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65050-372LF Block Diagram


    Original     		PDF SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram


    Original     		PDF SKY65051-377LF: SKY65051-377LF 201069D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		PDF BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552