RF TRANSISTOR 2GHZ Search Results

RF TRANSISTOR 2GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 2GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRL19 Abstract: No abstract text available Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an	Original	PDF	T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19
RF POWER TRANSISTOR Abstract: T1P3002028-SP transistor jc 817 Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across	Original	PDF	T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817
transistor 746 Abstract: No abstract text available Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across	Original	PDF	T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746
pHEMT transistor 360 Abstract: "RF Power Transistor" T1P3005028-SP Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across	Original	PDF	T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	PDF	SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR
sga9189z Abstract: marking p1z SGA-9189Z marking p1z transistor Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	PDF	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor
BFQ591 Abstract: RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR DIN45004B high gain low capacitance NPN transistor TRANSISTOR FQ 1ghz npn power 700 v power transistor Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ591 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment.	Original	PDF	BFQ591 S21e2 DIN45004B) BFQ591 RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR DIN45004B high gain low capacitance NPN transistor TRANSISTOR FQ 1ghz npn power 700 v power transistor
RF NPN POWER TRANSISTOR 3 GHZ Abstract: Collector 5v npn TRANSISTOR RF TRANSISTOR 3 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN transistor BFR93A 30ma 40v npn BFR93A NPN RF Transistor RF TRANSISTOR 1.5 GHZ Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93A DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS Ta=25℃	Original	PDF	BFR93A RF NPN POWER TRANSISTOR 3 GHZ Collector 5v npn TRANSISTOR RF TRANSISTOR 3 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN transistor BFR93A 30ma 40v npn BFR93A NPN RF Transistor RF TRANSISTOR 1.5 GHZ
Collector 5v npn TRANSISTOR Abstract: high gain low capacitance NPN transistor transistor RF TRANSISTOR 1.5 GHZ BFR93AW rf transistor high gain low voltage NPN transistor NPN RF Transistor 15 w RF POWER TRANSISTOR NPN 30ma 40v npn Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93AW DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz.	Original	PDF	BFR93AW Collector 5v npn TRANSISTOR high gain low capacitance NPN transistor transistor RF TRANSISTOR 1.5 GHZ BFR93AW rf transistor high gain low voltage NPN transistor NPN RF Transistor 15 w RF POWER TRANSISTOR NPN 30ma 40v npn
transistor Bf 981 Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695 Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency	Original	PDF	BF775 D-74025 transistor Bf 981 transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor transistor marking zg bf 695
high gain low voltage NPN transistor Abstract: high gain low capacitance NPN transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 2.4 GHZ RF TRANSISTOR 2GHZ RF TRANSISTOR "rf transistor" BFR540 RF POWER TRANSISTOR RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR540 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,	Original	PDF	BFR540 S21e2 high gain low voltage NPN transistor high gain low capacitance NPN transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 2.4 GHZ RF TRANSISTOR 2GHZ RF TRANSISTOR "rf transistor" BFR540 RF POWER TRANSISTOR RF POWER TRANSISTOR NPN
15 w RF POWER TRANSISTOR NPN Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520 Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,	Original	PDF	BFR520 900MHz S21e2 15 w RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520
Untitled Abstract: No abstract text available Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	Original	PDF	G-200, 1-877-GOLDMOS 1301-PTB
SMT resistor Abstract: TRANSISTOR 185 Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion	Original	PDF	G-200, 1-877-GOLDMOS 1301-PTB SMT resistor TRANSISTOR 185

E20124 Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	Original	PDF	150pF 1-877-GOLDMOS 1301-PTE E20124 E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
BFQ81 Abstract: No abstract text available Text: BFQ81 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure	Original	PDF	BFQ81 BFQ81 D-74025 20-Jan-99
BF775 Abstract: No abstract text available Text: BF775 Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency 1 2 3 94 9280 BF775 Marking: 775	Original	PDF	BF775 BF775 D-74025 15-Apr-96
transistor B 764 Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030 Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	PDF	T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030
transistor B 764 Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838 Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	PDF	T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838
T1P3005028-SP Abstract: 50w transistor RF power transistor Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed	OCR Scan	PDF	T1P3005028-SP T1P3005028-SP 500MHz 50watts 50w transistor RF power transistor
TRANSISTOR 185 Abstract: Ericsson RF POWER TRANSISTOR Text: ERICSSON ^ PTE 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	OCR Scan	PDF	BAV99 TRANSISTOR 185 Ericsson RF POWER TRANSISTOR
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	OCR Scan	PDF	Curre195 G-200, BCP56 BAV99
Untitled Abstract: No abstract text available Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency	OCR Scan	PDF	BF775 6R200Rb 00127E0 BF775
Untitled Abstract: No abstract text available Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency	OCR Scan	PDF	BF775 SyS22 BF775

RF TRANSISTOR 2GHZ Search Results

RF TRANSISTOR 2GHZ Result Highlights (5)

RF TRANSISTOR 2GHZ Datasheets Context Search

IRL19

RF POWER TRANSISTOR

transistor 746

pHEMT transistor 360

Untitled

sga9189z

BFQ591

RF NPN POWER TRANSISTOR 3 GHZ

Collector 5v npn TRANSISTOR

transistor Bf 981

high gain low voltage NPN transistor

15 w RF POWER TRANSISTOR NPN

Untitled

SMT resistor

E20124

BFQ81

BF775

transistor B 764

transistor B 764

T1P3005028-SP

TRANSISTOR 185

Untitled

Untitled

Untitled