RF TRANSISTOR 320 Search Results

RF TRANSISTOR 320 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 320 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor working principle Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron Text: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.	Original	AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron	PDF
2SC5435 Abstract: 2SC5800 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800	PDF
2SC5436 Abstract: 2SC5800 low vce transistor Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TS 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 low vce transistor	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS	PDF
9904 120 13843 Abstract: 2SC5435 2SC5800 nec 4308 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308	PDF
j327 transistor Abstract: j327 J334 transistor Text: Freescale Semiconductor Technical Data Document Number: MMRF1017N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1017NR3 This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.	Original	MMRF1017N MMRF1017NR3 j327 transistor j327 J334 transistor	PDF
transistor D 5024 Abstract: RD00HVS1 8582 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor D 5024 8582	PDF
mitsubishi top marking Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) mitsubishi top marking	PDF
RD09MUP2 Abstract: TRANSISTOR D 1765 720 L 0619 1788 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 720 L 0619 1788	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF
RD00HVS1 Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor 5024 transistor D 5024 TRANSISTOR 7916	PDF
TRANSISTOR D 1765 320 Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425	PDF
8582 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101 Oct2011 8582	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF

NTE475 Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz Text: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE475 NTE475 300MHz. 100mA, 100MHz 100kHz 175MHz m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz	PDF
RD00HVS1 Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RF Transistor s-parameter vhf T113 RD00HVS1-101	PDF
1383 transistor Abstract: TRansistor C 101 RD00HVS1-101 4134 mosfet RD00HVS1 TRANSISTOR 1383 T06M transistor D 5024 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz 1383 transistor TRansistor C 101 RD00HVS1-101 4134 mosfet TRANSISTOR 1383 T06M transistor D 5024	PDF
LL1608-FHN2K Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K	PDF
micro strip line Abstract: RD09MUP2 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) micro strip line	PDF
HF30-28S Abstract: ASI10605 HF30-28F Text: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD	Original	HF30-28S HF30-28S 112x45° HF30-28F ASI10605 HF30-28F	PDF
AGR18060EF Abstract: No abstract text available Text: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18060E PB03-171RFPP PB03-105RFPP) AGR18060EF	PDF
2SC5800 Abstract: Transistor NEC K 3654 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA873TD S21e2 2SC5800) 2SC5800 PA873TD-T3 2SC5800 Transistor NEC K 3654	PDF
j 6815 transistor Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .	OCR Scan	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor	PDF
transistor 1971 mitsubishi Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994 Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	OCR Scan	RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994	PDF

RF TRANSISTOR 320 Search Results

RF TRANSISTOR 320 Result Highlights (5)

RF TRANSISTOR 320 Datasheets Context Search

transistor working principle

2SC5435

2SC5436

Untitled

9904 120 13843

j327 transistor

transistor D 5024

mitsubishi top marking

RD09MUP2

Untitled

RD00HVS1

TRANSISTOR D 1765 320

8582

Untitled

NTE475

RD00HVS1

1383 transistor

LL1608-FHN2K

micro strip line

HF30-28S

AGR18060EF

2SC5800

j 6815 transistor

transistor 1971 mitsubishi