LL1608-FHN2K
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35005MT1
RDMRFG35005MT1BWA
LL1608-FHN2K
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MRFG35010M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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RDMRFG35010MT1BWA
MRFG35010MT1
MRFG35010M
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NPN planar RF transistor
Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor
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BFG10;
BFG10/X
BFG10
NPN planar RF transistor
BFG10
SOT143 C9
XN-71
transistor K 2937
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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RDMRFG35003MT1BWA
MRFG35003MT1
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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db14g
Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35010MT1
MRFG35010MT1
RDMRFG35010MT1BWA
db14g
CDR33BX104AKWS
T491X226K035AS
LL1608-FHN2K
85dBp
MRFG35010M
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2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC4093
2SC4093
S21e2
2SC4093-T1
R26 transistor
R27 transistor
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2SC5436
Abstract: NESG2107M33
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor
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PA868TS
2SC5436,
NESG2107M33)
S21e2
2SC5436
NESG2107M33
2SC5436
NESG2107M33
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motorola sps transistor
Abstract: MRF21010
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet
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MRF21010
RDMRF21010NCDMA
motorola sps transistor
MRF21010
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MRFG35005MT1
Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35005MT1
MRFG35005MT1
RDMRFG35005MT1BWA
CDR33BX104AKWS
T491X226K035AS
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
LL-210
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NESG2046M33
Abstract: NESG2107M33
Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor
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PA880TS
NESG2046M33,
NESG2107M33)
S21e2
NESG2046M33
NESG2107M33
NESG2046M33
NESG2107M33
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2SC5435
Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor
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PA867TS
2SC5435,
NESG2107M33)
S21e2
2SC5435
NESG2107M33
2SC5435
NESG2107M33
NEC JAPAN IC
xf 2 6-pin
marking XF
UPA867TS
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35003MT1
MRFG35003MT1
RDMRFG35003MT1BWA
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nec 2501
Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V1DS
nec 2501
ic nec 2501
nec RF package SOT89
2501 NEC
2SC4703-T1
2SC470-3
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2SC5436
Abstract: 2SC5800 uPA863TD-Q2
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
2SC5436
2SC5800
uPA863TD-Q2
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2SC5800
Abstract: NESG2046M33
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TS
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TS
2SC5436,
2SC5800)
2SC5436
2SC5800
PU10333EJ02V0DS
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2SC5603
Abstract: 2SC5676
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor
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PA846TD
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
2SC5603
2SC5676
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ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor
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PA846TC
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
ic 901
2SC5603
2SC5676
uPA846TC-T1
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2SC5436
Abstract: 2SC5800 low vce transistor
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TS
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
2SC5436
2SC5800
low vce transistor
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2SC5435
Abstract: 2SC5600 IC 14558 5mA25
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor
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PA841TD
2SC5435,
2SC5600)
S21e2
2SC5435
2SC5600
2SC5435
2SC5600
IC 14558
5mA25
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor
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PA862TD
2SC5435,
2SC5800)
2SC5435
2SC5800
P15685EJ1V0DS
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2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TD
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
NEC JAPAN IC
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transistor motorola 114-8
Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF861/D
2PHX33727Q-0
transistor motorola 114-8
MRF861
2n2222 npn transistor
motorola s 114-8
2N2222 SOA
power transistor 2n2222
motorola 114-8
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