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    RF TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Search Results

    RF TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA4020FT

    Abstract: 60GHz transistor 60Ghz TESQ
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)


    Original     		PDF TA4020FT TA4020FT 60GHz transistor 60Ghz TESQ

    Untitled

    Abstract: No abstract text available
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article


    Original     		PDF TA4020FT

    60Ghz

    Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article


    Original     		PDF TA4020FT 60Ghz TA4020FT rf transistor frequency 1.5GHz gain 20 dB

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    60Ghz

    Abstract: TA4020FT
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)


    Original     		PDF TA4020FT 60Ghz TA4020FT

    Untitled

    Abstract: No abstract text available
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343

    RF TRANSISTOR 10GHZ

    Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343 RF TRANSISTOR 10GHZ BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model

    Untitled

    Abstract: No abstract text available
    Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package


    Original     		PDF BFP405 AEC-Q101 OT343

    a1091 transistor

    Abstract: No abstract text available
    Text: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ


    Original     		PDF ENA1091A 2SC5490A A1091-7/7 a1091 transistor

    mobile rf power amplifier transistor

    Abstract: DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
    Text: New products New products MB39A102 Protection Circuit Functions Error Amplifier Block Error Amp The error amplifier is an amplifier that detects the DC/DC converter output voltage and outputs PWM control signals. Stable phase compensation against the system can be


    Original     		PDF MB39A102 23-bit mobile rf power amplifier transistor DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ


    Original     		PDF ENA1074A 2SC5245A S21e2 A1074-8/8

    900mhz chip antenna

    Abstract: Q62702-F1576 GMA marking
    Text: BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz


    Original     		PDF 900MHz OT-343 Q62702-F1576 Dec-12-1996 900mhz chip antenna Q62702-F1576 GMA marking

    transistor bfp 196

    Abstract: transistor bf 196 Q62702-F1320 GMA marking
    Text: BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz


    Original     		PDF 900MHz OT-143 Q62702-F1320 Dec-13-1996 transistor bfp 196 transistor bf 196 Q62702-F1320 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ


    Original     		PDF ENA1075A 2SC5277A A1075-8/8

    Untitled

    Abstract: No abstract text available
    Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz


    Original     		PDF BFP410 AEC-Q101 OT343

    transistor 2.4GHz amplifier schematic wifi

    Abstract: land pattern for 0402 cap
    Text: SZA-2044 Z SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 700MHz 11b/g DS121211 SZA2044ZSQ SZA2044ZSR transistor 2.4GHz amplifier schematic wifi land pattern for 0402 cap

    Untitled

    Abstract: No abstract text available
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		PDF BFP410 OT343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz


    OCR Scan     		PDF 900MHz BFP196W OT-343 Q62702-F1576 900MHz

    2sc4857

    Abstract: 2SC4872 2sc487 2sc4856 2sc4859
    Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation


    OCR Scan     		PDF 2SC4853 250mm2 jS21e 2sc4857 2SC4872 2sc487 2sc4856 2sc4859

    HP MMIC INA

    Abstract: No abstract text available
    Text: What HEWLETT* mLlíM PACKARD Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50 Q. Gain Block • Low N oise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth:


    OCR Scan     		PDF INA-03100 INA-03100 B-0007: HP MMIC INA

    ca3028

    Abstract: 100MHZ NPN TRANSISTORS 1ghz npn power RF POWER TRANSISTOR NPN 3GHz differential pair cascode CA3081 24-Z-2 24Z2 CA3183 RF amplifier rf 1ghz transistors
    Text: Selection Guide DIFFERENTIAL AMPLIFIERS : Typical Values, Unless Otherwise Specified TYPE CA3028A CA3028B NOTE 4 FEATURES DESCRIPTION Differential/ Cascode Amplifiers CA3049 Dual High Frequency CA3053 Differential/Cascode Amplifier CA3054 Dual Independent


    OCR Scan     		PDF CA3028A CA3028B CA3049 CA3053 500MHz Curre40/25 HFA3096 HFA3128 CA3039 ca3028 100MHZ NPN TRANSISTORS 1ghz npn power RF POWER TRANSISTOR NPN 3GHz differential pair cascode CA3081 24-Z-2 24Z2 CA3183 RF amplifier rf 1ghz transistors

    Untitled

    Abstract: No abstract text available
    Text: CONIilELL CORP/ ANALOG SYS =131 ]> 2413^17 0DQ0224 T • JRC 7 ^ 7 7 ^ 7 ~ /0 MA-207 n r jn L O G Super Fast, Wideband Operational Amplifier SYSTEMS General Description MA-207 is a very wide bandwidth, high slew rate operational amplifier constructed with a bipolar mono­


    OCR Scan     		PDF 0DQ0224 MA-207 MA-207 MA-207, 100MHz

    T3D 77

    Abstract: Ultrasonic amplifier schematic circuit MA-207 MA-207-CP 0D005 power amplifers schematic 10ACL mA207
    Text: CONI i l ELL CORP/ ANALOG SYS T3 D T> 2413^17 00D0B24 T B J R C 7 ^ 7 7 ^ 7 V i? M A -2 07 n fM R L O G SYSTEMS Super Fast, W id e b an d O p e r a t io n a l Amplifie r G e n e ra l D es c rip tio n MA-207 is a very wide bandwidth, high slew rate operational amplifierconstructed with a bipolar mono­


    OCR Scan     		PDF 00D0254 MA-207 200mA MA-207 MA-207, 100MHz T3D 77 Ultrasonic amplifier schematic circuit MA-207-CP 0D005 power amplifers schematic 10ACL mA207