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Abstract: No abstract text available
Text: TA4032FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4032FT ○ UHF Band Low Noise Amplifier Applications ・Thin Extreme Super mini Quad Package 4pin :TESQ FEATURES • Low Noise Figure:NF=1dB(Typ.) (@ f=1.575GHz) • High Gain:|S21e|2=14.8dB(Typ.) (@ f=1.575GHz)
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TA4032FT
575GHz)
TA4020FT.
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Untitled
Abstract: No abstract text available
Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S100T
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Abstract: No abstract text available
Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S100T
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Untitled
Abstract: No abstract text available
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article
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TA4020FT
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Abstract: No abstract text available
Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S102T
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Untitled
Abstract: No abstract text available
Text: Thin Extreme Super Mini Quad Package TESQ パッケージ 外形図 パッケージ形状および寸法 単位 : mm 1.2 ±0.05 0.2 ±0.05 方向マーク 1 1.2 ±0.05 3 0.9 ±0.05 4 0.12 ±0.05 2 0.52 ±0.05 0.8 ±0.05 参考パッド寸法 単位 : mm
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TA4020FT
Abstract: No abstract text available
Text: TA4020FT 東芝リニア集積回路 シリコンゲルマニウム モノシリック TA4020FT ・Thin Extreme Super mini Quad TESQ ﾊﾟｯｹｰｼﾞ 0.9±0.05 • 雑音特性が優れています。:NF=0.95dB (@ f=1.5GHz) • 高利得です。:|S21e|2=15.0dB (@ f=1.5GHz)
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TA4020FT
501GHz
TA4020FT
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TA4020FT
Abstract: 60GHz transistor 60Ghz TESQ
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)
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TA4020FT
TA4020FT
60GHz transistor
60Ghz
TESQ
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Untitled
Abstract: No abstract text available
Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S101T
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Text: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES P1 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S104T
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60Ghz
Abstract: TA4020FT
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)
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TA4020FT
60Ghz
TA4020FT
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60Ghz
Abstract: 60GHz transistor MT4S104T
Text: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 3 4 P1 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S104T
60Ghz
60GHz transistor
MT4S104T
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Untitled
Abstract: No abstract text available
Text: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S301T
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DIODE MARK 35
Abstract: TOSHIBA Package
Text: Thin Extreme Super Mini Quad Package TESQ Package Outline Dimensions Outline Dimensions Unit: mm 1.2 ±0.05 0.2 ±0.05 Package orientation mark 1 1.2 ±0.05 3 0.9 ±0.05 4 0.12 ±0.05 2 0.52 ±0.05 0.8 ±0.05 Land Pattern Example Unit: mm 0.95 0.35 0.3 Toshiba package name
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Abstract: No abstract text available
Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S101T
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Untitled
Abstract: No abstract text available
Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S101T
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Untitled
Abstract: No abstract text available
Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage
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MT4S102T
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60Ghz
Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article
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TA4020FT
60Ghz
TA4020FT
rf transistor frequency 1.5GHz gain 20 dB
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Abstract: No abstract text available
Text: Thin Extreme Super Mini Quad Package Embossed TE85L Tape for the TESQ Package Tape Dimensions Unit: mm 0.2 2.0 ±0.04 4.0 ±0.08 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.04 1.75 Y X’ Y’ Y’ Feed direction 1.35 X Cross section Y-Y’ X’ Cross section X-X’
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TE85L
TE85L
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TE85L paCKAGE
Abstract: te85l
Text: Thin Extreme Super Mini Quad Package TESQ パッケージ エンボス方式テーピング寸法 TE85L テープ形状および寸法 単位 : mm 0.2 2.0 ±0.04 4.0 ±0.08 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.04 1.75 Y X’ Y’ Y’ テープ引き出し方向
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TE85L)
TE85L
TE85L paCKAGE
te85l
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Untitled
Abstract: No abstract text available
Text: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S300T
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60Ghz
Abstract: 60GHz transistor MT4S100T
Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S100T
60Ghz
60GHz transistor
MT4S100T
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pj 9d9
Abstract: SQB7 jdda lddb bd-aj
Text: 4 d*rs*w{u w{t|*zo,w|{ h[be[fWhif[ Ydchfdaa[f QRNKP PLOMLP b W c i W hlc P g B C D B [-s{ a 4 _{}-, *o{us t|* ,vs +s{+|* M P f [|~.- ,s|,}+ E F G ]=US>Z ]=US>^ \=[U>Z \=[U>^ d=bd> fl` fs{~s+o-.+s b[V C Vwuw- H H Vwuw- D ew3s e V[` iHL6ZHL{{ E e.p }.-~.- E
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S-AU85
Abstract: TORU133 TB6595FL TC51WHM716AXBN70 TC51WKM716AXBN75
Text: 東芝半導体情報誌アイ 2003年3月号 1 業界初の大容量低消費電力 TC51WHM716AXBN70、TC51WKM716AXBN75 128メガビット擬似SRAM モバイルメモリマーケティング部 045-890-2701 低消費電力タイプの擬似スタティックRAM（Pseudo
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TC51WHM716AXBN70
TC51WKM716AXBN75
175mCMOS
12mmFBGA
12mm69FBGA
03/2Q
S-AU85
TORU133
TB6595FL
TC51WHM716AXBN70
TC51WKM716AXBN75
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