Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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2sc4624
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W
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2SC4838
2SC4838
65GHz.
65GHz,
2SC4525
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27mhz rf ic
Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,
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2SC1944
2SC1944
27MHz,
T0-220
27MHz
27mhz rf ic
T30 transistor
27mhz transistor
27mhz rf amplifier
T-30
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PDF
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MRF247
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF247 The RF Line 75 W - 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 2 .5 V o lt V H F large-signal am plifier applications N P N S IL IC O N in industrial and com m ercial FM equ ipm ent operating to 175 M H z.
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MRF247
MRF247
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PDF
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transistor BFR93
Abstract: No abstract text available
Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR93/BFR93R
BFR93
BFR93R
D-74025
31-Oct-97
transistor BFR93
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BFR91A
Abstract: No abstract text available
Text: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR91A
BFR91A
D-74025
31-Oct-97
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PDF
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bfr91
Abstract: No abstract text available
Text: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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BFR91
BFR91
D-74025
31-Oct-97
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PDF
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ML 1557 b transistor
Abstract: lm 1766 ic LM 748
Text: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR90A
BFR90A
D-74025
31-Oct-97
ML 1557 b transistor
lm 1766
ic LM 748
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lm 538 n ic
Abstract: BFR90
Text: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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BFR90
BFR90
D-74025
31-Oct-97
lm 538 n ic
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Untitled
Abstract: No abstract text available
Text: TEMIC BFR96TS S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR96TS
BFR96TS
D-74025
31-Oct-97
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PDF
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MRF233
Abstract: transistor D 2499 akd n ad transistor K D 2499
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF233 The RF Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . d e s ig n e d fo r 12.5 V o lt, m id -b a n d large-signal a m p lifie r a p p li ca tio n s in in d u s tria l and c o m m e rc ia l FM e q u ip m e n t o p e ra tin g in the
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MRF233
MRF233
transistor D 2499
akd n ad
transistor K D 2499
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2SC1972
Abstract: 2SC1972 equivalent
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2
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2SC1972
2SC1972
2SC1972 equivalent
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PDF
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MPS 4355 transistor
Abstract: MM8009 mps 0737
Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica tions in m ilitary and industrial equipment. Suitable for use as output,
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MM8009/D
MM8009
MPS 4355 transistor
MM8009
mps 0737
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sl2 357
Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
Text: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency
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BFP93A
D-74025
31-Oct-97
sl2 357
ML 1557 b transistor
telefunken P 152 MT
a3 sot 343
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sl2 357
Abstract: ML 1557 b transistor transistor MW 882
Text: Temic BFP93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency
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BFP93AW
D-74025
07-Nov-97
sl2 357
ML 1557 b transistor
transistor MW 882
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Untitled
Abstract: No abstract text available
Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFQ65
21-Mar-97
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PDF
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BFW92
Abstract: No abstract text available
Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92
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BFW92
BFW92
D-74025
31-Oct-97
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PDF
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SOT-23 marking 717
Abstract: un 1044 Telefunken u 257
Text: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR92/BFR92R
BFR92
BFR92R
D-74025
31-Oct-97
SOT-23 marking 717
un 1044
Telefunken u 257
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PDF
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zo 107 NA P 611
Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFR96T
BFR96T
D-74025
31-Oct-97
zo 107 NA P 611
BFR96
L 0403 817
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PDF
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mrf237
Abstract: Transistor MRF237 TL 413 mrf237 transistor mrf237 MOTOROLA transistor 2SA 640 motorola mrf237 15MH arco 457 T463
Text: M O T O R O L A MRF237 The R.F Line NPN SILICON RF POWER TRANSISTOR 4 W - 1 7 5 MHz . . . designed for 12.5 Vott large-signal power amplifier applications in communication equipment operating to 225 MHz. RF POWER TRANSISTOR NPN S IL IC O N • Specified 12.5 Vo lt, 175 MHz Characteristics —
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74-j21
63-i14
mrf237
Transistor MRF237
TL 413
mrf237 transistor
mrf237 MOTOROLA
transistor 2SA 640
motorola mrf237
15MH
arco 457
T463
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PDF
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transistor MAR 543
Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91
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BFR91
BFR91
24-Mar-97
transistor MAR 543
transistor BFR91
IPS240
BFR91 transistor
transistor mar 839
Telefunken u 439
transistor MAR 439
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PDF
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BFQ65
Abstract: mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor
Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • • • High power gain
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BFQ65
21-Mar-97
BFQ65
mar 739
LINEAR/525/OS/LM01A/MAR 527 transistor
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PDF
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BFQ65
Abstract: mar 806 transistor MAR 826 mar 739
Text: Tem ic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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bfq65
21-Mar-97
mar 806
transistor MAR 826
mar 739
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