RF TRANSISTOR S-PARAMETER AT 4GHZ Search Results

RF TRANSISTOR S-PARAMETER AT 4GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR S-PARAMETER AT 4GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	RF3934D 96mmx4 57mmx0 DS110520	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	RF3934D RF3934D 96mmx4 57mmx0 DS110520	PDF
DS1304 Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 14dB at 2GHz  48V Typical Packaged Performance  Output Power: 50W at P3dB  Drain Efficiency: 65% at P3dB	Original	RF3931D RF3931D DS130423 DS1304 RFMD HEMT GaN SiC amplifier circuit diagram class E 30w	PDF
ATC520L103KT16T Abstract: ATC520L103KT16 Text: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz	Original	GSA504-12 GSA504-12 ATC520L103KT16T ATC520L103KT16	PDF
GSA804-12 Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16 Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die	Original	GSA804-12 GSA804-12 s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16	PDF
ATC520L103KT16T Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16 Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die	Original	GSA804-89 OT-89 GSA804-89 ATC520L103KT16T Amplifier SOT-89 c4 s parameters 4ghz ATC520L103KT16	PDF
ATC520L103KT16T Abstract: bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter GSA603-00 Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC Text: GSA603-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01MHz to 4 GHz The GSA603-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 4GHz frequency range with 18dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz	Original	GSA603-00 01MHz GSA603-00 100um ATC520L103KT16T bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC	PDF
AN569 Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study	PDF
transistor SMD p90 Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features	Original	T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd	PDF
Untitled Abstract: No abstract text available Text: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and	Original	CHK025A-SOA CHK025A-SOA 200mA, DSCHK025ASOA3021	PDF
transistor w 431 Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features	Original	T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd	PDF
RF3934D Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	RF3934D RF3934D 96mmx4 57mmx0 DS110225 GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A	PDF
BFR360 Abstract: BFR360T GPS05996 Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,	Original	BFR360T 10dBm VPS05996 P-SC-75 GPS05996 BFR360 BFR360T GPS05996	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF

Untitled Abstract: No abstract text available Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3932D RF3932D 49dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3934D RF3934D 51dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3933D RF3933D DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3931D RF3931D DS130906	PDF
Untitled Abstract: No abstract text available Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using	Original	RFHA3942D RFHA3942D DS131024	PDF
Amplifier SOT-89 c4 Abstract: No abstract text available Text: GSA503-89 InGaP HBT Gain Block Product Features Product Description ● DC to 3.5GHz Package The GSA503-89 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 3GHz frequency range with 20 dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz	Original	GSA503-89 GSA503-89 OT-89 Amplifier SOT-89 c4	PDF
GSA603-12 Abstract: GSA-603-12 gsa603 Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die	Original	GSA603-12 GSA603-12 GSA-603-12 gsa603	PDF
ACS 086 Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz	PDF
sg transistor Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor" Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage	OCR Scan	TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor"	PDF
transistor SG 14 Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the	OCR Scan	TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR	PDF

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RF TRANSISTOR S-PARAMETER AT 4GHZ Search Results

RF TRANSISTOR S-PARAMETER AT 4GHZ Result Highlights (5)

RF TRANSISTOR S-PARAMETER AT 4GHZ Datasheets Context Search

Untitled

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DS1304

ATC520L103KT16T

GSA804-12

ATC520L103KT16T

ATC520L103KT16T

AN569

transistor SMD p90

Untitled

transistor w 431

RF3934D

BFR360

BFP620 acs

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Amplifier SOT-89 c4

GSA603-12

ACS 086

sg transistor

transistor SG 14