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    RF1S30 Price and Stock

    Rochester Electronics LLC RF1S30P05

    MOSFET P-CH 50V 30A
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    DigiKey RF1S30P05 Bulk 342
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    Rochester Electronics LLC RF1S30N06LE

    MOSFET N-CH 60V 30A
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    DigiKey RF1S30N06LE Bulk 381
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    Fairchild Semiconductor Corporation RF1S30P05SM

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    Harris Semiconductor RF1S30P05SM

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    Quest Components RF1S30P05SM 40
    • 1 $8.316
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    Rochester Electronics RF1S30P05SM 92 1
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    Intersil Corporation RF1S30P05SM

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    Quest Components RF1S30P05SM 36
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    Find more RF1S30 price and stock on Findchips.com

    RF1S30 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S30N06LE Fairchild Semiconductor 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S30N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S30N06LESM Fairchild Semiconductor 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S30N06LESM Fairchild Semiconductor 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFET Original PDF
    RF1S30N06LESM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S30N06LESM Intersil 30A, 60V, ESD Rated, 0.047 ?, Logic Level N-Channel Power MOSFETs Original PDF
    RF1S30N06LESM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S30N06LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S30N06LESM9A Fairchild Semiconductor 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFET Original PDF
    RF1S30N06LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S30P05 Harris Semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S30P05 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S30P05SM Fairchild Semiconductor 30A, 50V, 0.065 Ohm, P-Channel Power MOSFET Original PDF
    RF1S30P05SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S30P05SM Harris Semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S30P05SM Intersil 30A, 50V, 0.065 ?, P-Channel Power MOSFETs Original PDF
    RF1S30P05(SM) Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    RF1S30P05SM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S30P05SM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S30P05SM9A Fairchild Semiconductor 30A, 50V, 0.065 Ohm, P-Channel Power MOSFET Original PDF

    RF1S30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f1s30p05

    Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334

    0n06

    Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
    Text: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic


    Original     		PDF 0N06L RFP30N06LE, RF1S30N06LESM 0n06 mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE

    F30N06LE

    Abstract: RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254 RF1S30N06LE
    Text: RFP30N06LE, RF1S30N06LE, RF1S30N06LESM S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB • 30A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • 2kV ESD Protected


    Original     		PDF RFP30N06LE, RF1S30N06LE, RF1S30N06LESM O-220AB O-262AA RF1S30N06LE performanc39 1e-30 F30N06LE RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254

    F1S30P05

    Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334

    0N06L

    Abstract: RFP30N06
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		PDF RFP30N06LE, RF1S30N06LESM 0N06L RFP30N06

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM


    Original     		PDF RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334

    F1S30P06

    Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC TB334 RFP30P06 F1S30P06 F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P

    F1S30P06

    Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
    Text: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM O-247 175oC F1S30P06 RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3

    RFP30P06

    Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC RFP30P06 R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334

    P30N06L

    Abstract: No abstract text available
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP30N06LE, RF1S30N06LESM TA49027. P30N06L

    RFP30P06

    Abstract: No abstract text available
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. RFP30P06

    f1s30p05

    Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris

    P30N06

    Abstract: p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP30N06LE, RF1S30N06LESM TA49027. P30N06 p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334

    F30N06LE

    Abstract: AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP30N06LE, RF1S30N06LESM TA49027. F30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 0-065i2 81e-8) 23e-1 97e-3 37e-5) 78e-9

    F1S30P05

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)

    30N06LE

    Abstract: 30n06l s1am 30n06 F30N06LE
    Text: fT| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N | =


    OCR Scan     		PDF RFP30N06LE, RF1S30N06LE, RF1S30N06LESM -262A RF1S30N06LE RF1S30N06LESM 576e-4 591e-9 1e-30 30N06LE 30n06l s1am 30n06 F30N06LE

    F30N06LE

    Abstract: TA49027
    Text: in te r« ! RFP30N06LE, RF1S30N06LESM D ata S h e e t 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP30N06LE, RF1S30N06LESM TA49027. RF1S30N06LESM AN7254 AN7260. F30N06LE TA49027

    Untitled

    Abstract: No abstract text available
    Text: RFP30N06LE, RF1S30N06LESM Semiconductor April 1999 Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP30N06LE, RF1S30N06LESM TA49027. 1e-30 07e-3 03e-7) 38e-3 64e-5) 75e-3

    F1S30P06

    Abstract: 30p06
    Text: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel


    OCR Scan     		PDF RFG30P06, RFP30P06, S30P06, RF1S30P06SM O-247 P06SM 81e-8) 23e-1 97e-3 37e-5) F1S30P06 30p06

    RFP30P06

    Abstract: No abstract text available
    Text: interrii RFG30P06, RFP30P06, RF1S30P06SM D a ta S h e e t J u ly 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs F ile N u m b e r 2 4 3 7 .3 Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. RF1S30P06SM AN7254 AN7260. RFP30P06

    Untitled

    Abstract: No abstract text available
    Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.