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    S1AM Search Results

    S1AM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    L77DA15S1AMNRM6 Amphenol Communications Solutions Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 15 Socket, Bright Tin Shell, Flash Gold, 3.1mm (0.122 in) Clear Hole, Metal R/A Bracket With Boardlock Visit Amphenol Communications Solutions
    L77DFE09S1AMN Amphenol Communications Solutions Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, 0.38m (15 in) Gold, 3.1mm (0.122 in) Clear Hole, Metal R/A Bracket Without Boardlock Visit Amphenol Communications Solutions
    L177DFEG09S1AMN Amphenol Communications Solutions Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, 0.76um (30u\\) Gold, M3 Threaded Rear Insert, Metal R/A Bracket Without Boardlock Visit Amphenol Communications Solutions
    L77DEH09S1AMN Amphenol Communications Solutions Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 09 Socket, Bright Tin Shell, Flash Gold, 4-40 Threaded Rear Insert, Metal R/A Bracket Without Boardlock Visit Amphenol Communications Solutions
    L77DAG15S1AMN Amphenol Communications Solutions Dsub, Machined signal 7.5A, Right Angle PCB Thru Hole, FP=10.3mm, Cnt Row Spacing 2.54mm, Cnt Tail 0.6mm, 15 Socket, Bright Tin Shell, Flash Gold, M3 Threaded Rear Insert, Metal R/A Bracket Without Boardlock Visit Amphenol Communications Solutions
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    Vishay Semiconductors ES1A-M3-61T

    DIODE GEN PURP 50V 1A DO214AC
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    DigiKey ES1A-M3-61T Cut Tape 13,128 1
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    ES1A-M3-61T Digi-Reel 13,128 1
    • 1 $0.37
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    ES1A-M3-61T Reel 7,200 1,800
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    Taiwan Semiconductor US1A-M2G

    DIODE GEN PURP 50V 1A DO214AC
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    Taiwan Semiconductor ES1A-M2G

    DIODE GEN PURP 50V 1A DO214AC
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    Vishay Semiconductors ES1A-M3-5AT

    DIODE GEN PURP 50V 1A DO214AC
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    DigiKey ES1A-M3-5AT Reel 22,500
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    Amphenol Communications Solutions L77DE09S1AMN

    CONN D-SUB RCPT 9POS R/A SLDR
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    Newark L77DE09S1AMN Bulk 200
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    S1AM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1A M2G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 50V 1A DO214AC Original PDF
    S1A-M3/5AT Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GPP 1A 50V DO-214AC Original PDF
    S1A-M3/61T Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GPP 1A 50V DO-214AC Original PDF

    S1AM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    Untitled

    Abstract: No abstract text available
    Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge


    Original     		PDF FDB070AN06A0 FDP070AN06A0 O-220AB O-263AB

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    FQP45N03L

    Abstract: FQP45N03
    Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves


    Original     		PDF FQP45N03L 1450pF O-220AB FQP45N03L FQP45N03

    75631P

    Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
    Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE


    Original     		PDF HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 75631P AN9321 HUFA75631P3 HUFA75631S3ST TB334

    ITF86182SK8T

    Abstract: MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


    Original     		PDF ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 MIL-S-19500. 150oC TA49007. AN7254 AN7260 AN9321 AN9322 RFF70N06 RFG70N06

    7n10l

    Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    76639p

    Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
    Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic


    Original     		PDF HUF76639P3, HUF76639S3S O-220AB HUF76639P3 76639p HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    sma diode marking sm vishay

    Abstract: No abstract text available
    Text: S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop


    Original     		PDF DO-214AC J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sma diode marking sm vishay

    RELAY 4088

    Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using


    Original     		PDF RFD14N06L, RFD14N06LSM, RFP14N06L RELAY 4088 TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L

    AN9321

    Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
    Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3


    Original     		PDF HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334

    FD3055

    Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    AN9321

    Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5
    Text: HUFA75823D3, HUFA75823D3S Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features


    Original     		PDF HUFA75823D3, HUFA75823D3S O-251AA O-252AA HUFA75823D3 75823D AN9321 HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5

    AN7254

    Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
    Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49154 AN7254 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334

    HUF76445P3

    Abstract: HUF76445S3S HUF76445S3ST TB334
    Text: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer


    Original     		PDF HUF76445P3, HUF76445S3S O-220AB HUF76445P3 HUF76445P3 HUF76445S3S HUF76445S3ST TB334

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334

    75337

    Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
    Text: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75337G3, HUFA75337P3, HUFA75337S3S 75337 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334

    75307

    Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
    Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUFA75307P3, HUFA75307D3, HUFA75307D3S 75307 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7

    76423P

    Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
    Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S


    Original     		PDF HUFA76423P3, HUFA76423S3S O-220AB O-263AB HUFA76423P3 76423P 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13

    59E-1

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
    Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF75309T3ST 59E-1 AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337

    76633s

    Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
    Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S


    Original     		PDF HUF76633P3, HUF76633S3S O-220AB O-263AB HUF76633P3 76633s 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407

    76629D

    Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
    Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw


    Original     		PDF HUF76629D3, HUF76629D3S O-251AA HUF76629D3 76629D AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692