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    HUF76113DK8T Price and Stock

    Rochester Electronics LLC HUF76113DK8T

    MOSFET 2N-CH 30V 6A US8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF76113DK8T Bulk 592
    • 1 -
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    • 100 -
    • 1000 $0.51
    • 10000 $0.51
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    Fairchild Semiconductor Corporation HUF76113DK8T

    Power Field-Effect Transistor, 6A, 30V, 0.041ohm, 2-Element, N-Channel, MOSFET, MS-012AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF76113DK8T 42,500 1
    • 1 $0.4875
    • 10 $0.4875
    • 100 $0.4583
    • 1000 $0.4144
    • 10000 $0.4144
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    HUF76113DK8T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76113DK8T Fairchild Semiconductor 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76113DK8T Fairchild Semiconductor 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76113DK8T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    AN9321

    Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113DK8 powe15mm) MS-012AA 330mm EIA-481 AN9321 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113DK8

    76113dk8

    Abstract: ta76113
    Text: inteikil HUF76113DK8 Data S heet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Ultra/0' Formerly developmental type TA76113. Ordering Information HUF76113DK8 PACKAGE MS-012AA 4387.4 • Logic Level Gate Drive


    OCR Scan     		PDF HUF76113DK8 76113dk8 ta76113

    UF76113

    Abstract: No abstract text available
    Text: 33 HUF76113DK8 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET July 1998 Description Features UttraFi Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113DK8 1-800-4-HARRIS UF76113

    VA22

    Abstract: Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761
    Text: H U F76113D K 8 in t e r d i Data Sheet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET # 4 3 8 7 .4 Features • Logic Level Gate Drive This N-Channel power M O SFET is w F ile N u m b e r manufactured using the innovative


    OCR Scan     		PDF HUF76113DK8 43D2571 VA22 Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761