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    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
    Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337

    n13 sot 23

    Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121
    Text: HUF76113SK8 Data Sheet December 2001 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121

    76113

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST 76113 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    TC2206

    Abstract: TC-2112 202E1
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113SK8 TC2206 TC-2112 202E1

    TA7611

    Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
    Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST TA7611 TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4448.2 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37

    n13 sot 23

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76113T3ST n13 sot 23

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    AN9321

    Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113DK8 powe15mm) MS-012AA 330mm EIA-481 AN9321 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113DK8

    76113dk8

    Abstract: ta76113
    Text: inteikil HUF76113DK8 Data S heet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Ultra/0' Formerly developmental type TA76113. Ordering Information HUF76113DK8 PACKAGE MS-012AA 4387.4 • Logic Level Gate Drive


    OCR Scan     		PDF HUF76113DK8 76113dk8 ta76113

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 interrii Data Sheet O ctober 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76113SK8

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 Description Features m • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113SK8 TB334, HUF76113SK8 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 | Features Description w • Logic Level Gate Drive This N-Chan nel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113SK8 MS-012AA

    UF76113

    Abstract: No abstract text available
    Text: 33 HUF76113DK8 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET July 1998 Description Features UttraFi Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113DK8 1-800-4-HARRIS UF76113

    Saber

    Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
    Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the


    OCR Scan     		PDF HUF76113T3ST TB334, OT-223 Saber TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST

    VA22

    Abstract: Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761
    Text: H U F76113D K 8 in t e r d i Data Sheet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET # 4 3 8 7 .4 Features • Logic Level Gate Drive This N-Channel power M O SFET is w F ile N u m b e r manufactured using the innovative


    OCR Scan     		PDF HUF76113DK8 43D2571 VA22 Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761