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Microchip Technology Inc VRF3933 RF MOSFET 100V M177
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DigiKey	VRF3933	Bulk	24		1	1 $104.49 10 $90.625 100 $90.625 1000 $90.625 10000 $90.625	Buy Now
Microchip Technology Inc VRF3933MP RF MOSFET 100V M177
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RF3933 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
RF3933	RF Micro Devices	RF Amplifiers, RF/IF and RFID, RF AMP 90W 3.5GHZ	Original	PDF
RF3933	RF Micro Devices	GaN WIDE-BAND POWER AMPLIFIER	Original	PDF
RF3933PCBA-411	RF Micro Devices	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RF3933 PA	Original	PDF

RF3933 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EI -40C Abstract: No abstract text available Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	PDF	RF3933 DS120306 EI -40C
Untitled Abstract: No abstract text available Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier	Original	PDF	RF3933 RF3933 DS130905
Untitled Abstract: No abstract text available Text: RF3933 90W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	PDF	RF3933 RF3933 DS121207
GaN TRANSISTOR Abstract: mobile rf power amplifier transistor GAN high power amplifier GaN BJT RF3933 rf gan amplifier GaN amplifier DSB070828 BJT amplifiers Text: RF3933 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=90W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation	Original	PDF	RF3933 RF3933 DSB070828 GaN TRANSISTOR mobile rf power amplifier transistor GAN high power amplifier GaN BJT rf gan amplifier GaN amplifier DSB070828 BJT amplifiers
Untitled Abstract: No abstract text available Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance	Original	PDF	RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520
Untitled Abstract: No abstract text available Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	PDF	RF3933D RF3933D DS130906
RFMD HEMT GaN SiC Abstract: Gan hemt transistor RFMD LDMOS 90W Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged	Original	PDF	RF3933D90 RF3933D 96mmx2 52mmx0 RF3933D DS110520 RFMD HEMT GaN SiC Gan hemt transistor RFMD LDMOS 90W
LDMOS 90W Abstract: No abstract text available Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	PDF	RF3933 RF3933 DS120306 LDMOS 90W
GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	PDF	RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt
Gan hemt transistor RFMD Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron	Original	PDF	RF393x RF3933 RF3934 Gan hemt transistor RFMD RF3932 HIGH POWER TRANSISTOR Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
Gan hemt transistor RFMD Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933 Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz	Original	PDF
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	PDF	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt
VCO-102 Abstract: NBB-502 spf-5189 RF5643wda cxe-2089 Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high	Original	PDF

Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	PDF	11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
rf3826 Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931 Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.	Original	PDF
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF
EAR99 Abstract: GaN 100 watt GaN TRANSISTOR GaN matching 100 watt RF3934 Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932 Text: RFMD . 120 Watt GaN Wideband Power Amplifier The RF3934, the newest of RFMD’s series of unmatched power transistors, is a 48 volt, 120-watt high power discrete amplifier designed for commercial wireless infrastructure, military, industrial/ scientific/medical, and general purpose broadband amplifier	Original	PDF	RF3934, 120-watt RF3934 EAR99 GaN 100 watt GaN TRANSISTOR GaN matching 100 watt Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932

RF3933 Search Results

RF3933 Price and Stock

Microchip Technology Inc VRF3933

Microchip Technology Inc VRF3933MP

RF3933 Datasheets (3)

RF3933 Datasheets Context Search

EI -40C

Untitled

Untitled

GaN TRANSISTOR

Untitled

Untitled

RFMD HEMT GaN SiC

LDMOS 90W

GaN TRANSISTOR

Gan hemt transistor RFMD

UPC8236

Gan hemt transistor RFMD

GaN ADS

VCO-102

Integrated Synthesizers with Mixers

BGU7073

rf3826

6 pin TRANSISTOR SMD CODE CAA

EAR99