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RF Micro Devices Inc RF3934SR IC RF AMP GPS 0HZ-3.5GHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF3934SR	Cut Tape	48		1	1 $362.58 10 $362.58 100 $362.58 1000 $362.58 10000 $362.58	Buy Now

RF3934 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
RF3934	RF Micro Devices	GaN WIDE-BAND POWER AMPLIFIER	Original	PDF
RF3934PCBA-411	RF Micro Devices	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RF3934 PA	Original	PDF
RF3934SR	RF Micro Devices	RF Amplifiers, RF/IF and RFID, RF AMP 120W 3.5GHZ	Original	PDF

RF3934 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation	Original	RF3934 RF3934 DSB070828	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	RF3934D 96mmx4 57mmx0 DS110520	PDF
Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	RF3934 RF3934 DS120306	PDF
GRM55ER72A475KA01L Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS	PDF
Untitled Abstract: No abstract text available Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier	Original	RF3934 RF3934 DS131206	PDF
GaN amplifier Abstract: RF3934 Gan transistor GaN amplifier 120W mobile rf power amplifier transistor GaN BJT DSB070530 Hemt transistor Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation	Original	RF3934 RF3934 DSB070530 GaN amplifier Gan transistor GaN amplifier 120W mobile rf power amplifier transistor GaN BJT DSB070530 Hemt transistor	PDF
Untitled Abstract: No abstract text available Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3934D RF3934D 51dBm DS130906	PDF
bifet amplifier discrete schematic Abstract: ERJ8GEYJ100V thermocouple gaas Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	RF3934 RF3934 DS120202 bifet amplifier discrete schematic ERJ8GEYJ100V thermocouple gaas	PDF
Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	RF3934 RF3934 DS121207	PDF
Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	RF3934 DS120306	PDF
GaN ADS Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	RF3934 RF3934 DS111121 GaN ADS	PDF
RF3934D Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	RF3934D RF3934D 96mmx4 57mmx0 DS110225 GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	RF3934D RF3934D 96mmx4 57mmx0 DS110520	PDF
GRM32NR72A104KA01L Abstract: GaN ADS GaN amplifier 120W RF3934 GRM55ER72A475KA01L ATC800A330JT ATC800A ERJ8GEYJ100V Text: RF3934 120W GaN WIDE-BAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin Features         Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical	Original	RF3934 RF3934 hi-5570 440mA DS101110 GRM32NR72A104KA01L GaN ADS GaN amplifier 120W GRM55ER72A475KA01L ATC800A330JT ATC800A ERJ8GEYJ100V	PDF

GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt	PDF
Gan hemt transistor RFMD Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron	Original	RF393x RF3933 RF3934 Gan hemt transistor RFMD RF3932 HIGH POWER TRANSISTOR Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
Gan hemt transistor RFMD Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933 Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz	Original		PDF
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt	PDF
VCO-102 Abstract: NBB-502 spf-5189 RF5643wda cxe-2089 Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high	Original		PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104	PDF
Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers	PDF
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original		PDF

RF3934 Search Results

RF3934 Price and Stock

RF Micro Devices Inc RF3934SR

RF3934 Datasheets (3)

RF3934 Datasheets Context Search

Untitled

Untitled

Untitled

GRM55ER72A475KA01L

Untitled

GaN amplifier

Untitled

bifet amplifier discrete schematic

Untitled

Untitled

GaN ADS

RF3934D

Untitled

GRM32NR72A104KA01L

GaN TRANSISTOR

Gan hemt transistor RFMD

UPC8236

Gan hemt transistor RFMD

GaN ADS

VCO-102

BA 7891 NG

Integrated Synthesizers with Mixers

6 pin TRANSISTOR SMD CODE CAA