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    RFB18N10 Search Results

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    RFB18N10 Price and Stock

    Rochester Electronics LLC RFB18N10CS

    MOSFET N-CH 100V 18A TO220AB-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFB18N10CS Bulk 121
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.49
    • 10000 $2.49
    		Buy Now

    Harris Semiconductor RFB18N10CS

    18A, 100V, 0.1ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFB18N10CS 674 1
    • 1 $2.39
    • 10 $2.39
    • 100 $2.25
    • 1000 $2.03
    • 10000 $2.03
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    Harris Semiconductor RFB18N10CSVM

    N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFB18N10CSVM 49 1
    • 1 $3.67
    • 10 $3.67
    • 100 $3.45
    • 1000 $3.12
    • 10000 $3.12
    		Buy Now

    RFB18N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFB18N10CS Toshiba Power MOSFETs Cross Reference Guide Original PDF

    RFB18N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F18N10CS

    Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
    Text: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an


    Original     		PDF RFB18N10CS RFB18N10CS -55oC 175oC F18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10

    Untitled

    Abstract: No abstract text available
    Text: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ


    Original     		PDF RFB18N10CSHM

    Untitled

    Abstract: No abstract text available
    Text: RFB18N10CS Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ


    Original     		PDF RFB18N10CS

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i


    OCR Scan     		PDF RFB18N10CS TS-001AA RFB18N10CS AN7260)

    F18N10CS

    Abstract: RFB18N10CS F18N10 RFB18N10
    Text: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1


    OCR Scan     		PDF RFB18N10CS TS-001AA RFB18N10CS AN7254 AN7260) VOO-28V F18N10CS F18N10 RFB18N10

    F18N10CS

    Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
    Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl


    OCR Scan     		PDF 43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking

    RLP5N08LE

    Abstract: 720 transistor transistor field-effect transistor
    Text: — POWER MOSFETs 7 INTELLIGENT DISCRETES PAGE INTELLIGENT DISCRETE DATA SHEETS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor 7-3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs 7-8 RLP1N06CLE


    OCR Scan     		PDF RFB18N10CS RFV10N50BE RLP1N06CLE RLP1N08LE RLP5N08LE 720 transistor transistor field-effect transistor

    RHR30120

    Abstract: RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055
    Text: • P art N u m b e r M fr Qty/Note 7600345 P a rt N u m b e r □ □□□37 6 M fr -no Qty/Note ■ P a rt N u m b e r M fr Qty/Nol RC1466 REI CALL RC6S5TL/R REI 179 REF03GP RC1469 ANA 167 REI CALL RC668L REI 158 REF03GS RC1472U ANA 71 REI 390 RC78T12ACK UT


    OCR Scan     		PDF RC1466 RC1469 RC1472U RC1505 RC1520G/C RC1533G RC1533L RC1S50 RC1550F7B RC1S63 RHR30120 RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40