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RFL10N15 Abstract: 330 e57 Text: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni	OCR Scan	0N15D Mii-Std-750, RFM10N15 RFP10N15 RFL10N15 PCF10N15W PCF10N15D 122x122 1-800-4-HARRIS RFL10N15 330 e57	PDF

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RFL10N15

Abstract: 330 e57
Text: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni

OCR Scan

0N15D Mii-Std-750, RFM10N15 RFP10N15 RFL10N15 PCF10N15W PCF10N15D 122x122 1-800-4-HARRIS RFL10N15 330 e57

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