SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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CLX27
Abstract: CLX27-00 CLX27-05 CLX27-10
Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application
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CLX27
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27-nn:
QS9000
CLX27
CLX27-00
CLX27-05
CLX27-10
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CLX30
Abstract: CLX30-00 CLX30-05 CLX30-10 d 882 p 063DB
Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application
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CLX30
CLX30-00
MWP-25
CLX30-05
CLX30-10
CLX30-nn:
QS9000
CLX30
CLX30-00
CLX30-05
CLX30-10
d 882 p
063DB
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A03 transistor
Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
Q62702F-1610
a03 dbm
microwave transistor bfy193
24 marking code transistor
K 193 transistor
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XY 805 ic
Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
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Q97301013
Q97111419
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
XY 805 ic
microwave transducer
marking A04
on semiconductor marking code A04
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siemens spc 2
Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
MWP-25
MWP-35
siemens spc 2
SIEMENS MICROWAVE RADIO
SIEMENS MICROWAVE RADIO 8 GHz
microwave transistor siemens
MSC Microwave
x-band mmic lna
"Microwave Diodes"
Microwave GaAs FET micro x
MMIC Amplifier Micro-X marking D
CFY67
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35 micro-X Package MARKING CODE Q
Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •
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BFY450
19dBm
QS9000
35 micro-X Package MARKING CODE Q
BFY450 P
microwave transistor siemens
transistor "micro-x" "marking" 3
BFY450
RF TRANSISTOR NPN MICRO-X
Siemens Microwave
micro-X Package MARKING CODE 3
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low noise hemt
Abstract: 35 micro-X Package MARKING CODE Q igp 0830 CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P
Text: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz
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CFY66
CFY67)
CFY66-08
CFY66-0assemblies.
QS9000
low noise hemt
35 micro-X Package MARKING CODE Q
igp 0830
CFY66
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY67
HEMT marking P
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CLX27
Abstract: CLX27-00 CLX27-05 CLX27-10
Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX27
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27-nn:
QS9000
CLX27
CLX27-00
CLX27-05
CLX27-10
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marking code INFINEON
Abstract: BAS70 BAS70-T1 Q62702A1173 Q62702A674 Microwave Semiconductor
Text: BAS70 HiRel Silicon Schottky Diode • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package
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BAS70
BAS70-T1
Q62702A1173
QS9000
marking code INFINEON
BAS70
BAS70-T1
Q62702A1173
Q62702A674
Microwave Semiconductor
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CLY29
Abstract: CLY29-00 CLY29-05 CLY29-10
Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY29
CLY29-00
MWP-25
CLY29-05
CLY29-10
CLY29-nn:
QS9000
CLY29
CLY29-00
CLY29-05
CLY29-10
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BFY42
Abstract: BFY420
Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package
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BFY420
25-Line
Transistor25
QS9000
BFY42
BFY420
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d marking Micro-X
Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz
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BFY450
19dBm
25-Line
Transistor25
QS9000
d marking Micro-X
BFY450
RF TRANSISTOR NPN MICRO-X
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BFY181
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz
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BFY181
Q62702F1607
QS9000
BFY181
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micro-X Package MARKING CODE C
Abstract: INFINEON DETAIL micro-X Package MARKING CODE 3
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
25-Line
Transistor25
BFY405
QS9000
micro-X Package MARKING CODE C
INFINEON DETAIL
micro-X Package MARKING CODE 3
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Untitled
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz
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BFY181
BFY181
Q62702F1607
Q62702in
QS9000
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Micro-X Marking 865
Abstract: No abstract text available
Text: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package
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OCR Scan
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CFY67
CFY67-06
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
QS9000
Micro-X Marking 865
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Q62702-A118
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014
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OCR Scan
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
Q62702-A118
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Micro-X marking "K"
Abstract: micro-X Package MARKING CODE C
Text: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power
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OCR Scan
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CFY27
CFY27-38
CFY27-P
CFY27-nnl:
QS9000
Micro-X marking "K"
micro-X Package MARKING CODE C
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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OCR Scan
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CLY32
CLY32-00
MWP-25
CLY32-05
CLY32-10
CLY32-nn:
QS9000
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •
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OCR Scan
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CFY66
CFY67)
CFY66-08
QS9000
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon PIN Diode BXY43 Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Hermetically sealed microwave package esa qualified • ESA/SCC Detail Spec. No.: 5513/030
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OCR Scan
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BXY43
BXY43-T1
BXY43-P1
43-FP
Q62702X151
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz
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OCR Scan
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BFY183
Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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OCR Scan
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CLX27
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27-nn:
QS9000
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PDF
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