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    RG-178 SPICE MODEL Search Results

    RG-178 SPICE MODEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    RG-178 SPICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4921DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si4921DY 0-to-10V 21-May-03 PDF

    Si7447DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7447DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si7447DP 0-to-10V 10-Sep-02 PDF

    Si3424DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si3424DV 13-Apr-01 PDF

    SI3424DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si3424DV S-50383Rev. 21-Mar-05 PDF

    SUP85N02-03

    Abstract: No abstract text available
    Text: SPICE Device Model SUB/SUP85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUB/SUP85N02-03 18-Apr-01 SUP85N02-03 PDF

    Si4911DY

    Abstract: Si4921DY
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


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    Si4921DY 20-May-04 Si4911DY PDF

    SUB85N02-03

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    SUP/SUB85N02-03 S-60545Rev. 10-Apr-06 SUB85N02-03 PDF

    Si3424DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424DV N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original
    Si3424DV PDF

    Si3424DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si3424DV 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUP/SUB85N02-03 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ942EP www.vishay.com Vishay Siliconix N-Channel Dual Asymmetric 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SQJ942EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    4425b

    Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
    Text: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station


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    Si4421DY 12-Dec-03 AN826 20-Jun-03 4425b V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808 PDF

    SOT-563 SOT-666

    Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
    Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W


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    Si1024X OT-563 SC-89 SC70-6L SC89-6L Specification--PACK-0007-9 T-05206, AN826 SC-89: 20-Jun-03 SOT-563 SOT-666 marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1 PDF

    SI1473DH

    Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
    Text: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices


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    Si1473DH OT-363 SC-70 Si1473DH-T1-E3 03-May-07 marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH PDF

    C3028LD

    Abstract: DMC3028LSD-13 DMC3028LSD J-STD-020D C3028
    Text: A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS on V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A


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    DMC3028LSD MIL-STD-202, C3028LD DMC3028LSD-13 DMC3028LSD J-STD-020D C3028 PDF

    SMAJ33 spice

    Abstract: marking JP diodes A13F
    Text: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Please click here to visit our online spice models database. Features • • • • • • 400W Peak Pulse Power Dissipation Glass Passivated Die Construction Unidirectional and Bidirectional Versions Available


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    SMAJ170 J-STD-020D MIL-STD-202, DS19005 SMAJ33 spice marking JP diodes A13F PDF

    rg-178 spice model

    Abstract: No abstract text available
    Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


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    THS3092 THS3096 SLOS428A THS3096 rg-178 spice model PDF

    08055C104KAT2A

    Abstract: No abstract text available
    Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


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    THS3092 THS3096 SLOS428A THS3096 08055C104KAT2A PDF

    dmp3025

    Abstract: P3025L DMP3025LK3 DMP3025LK3-13 J-STD-020D 20V P-Channel Power MOSFET high current p3025
    Text: A Product Line of Diodes Incorporated DMP3025LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 25mΩ @ VGS= -10V -16.1A 41mΩ @ VGS= -4.5V


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    DMP3025LK3 O252-3L dmp3025 P3025L DMP3025LK3 DMP3025LK3-13 J-STD-020D 20V P-Channel Power MOSFET high current p3025 PDF

    9-0-9 step down transformer

    Abstract: No abstract text available
    Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


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    THS3092 THS3096 SLOS428B THS3096 9-0-9 step down transformer PDF

    9-0-9 step down transformer

    Abstract: step down transformer 909
    Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


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    THS3092 THS3096 SLOS428B THS3096 9-0-9 step down transformer step down transformer 909 PDF

    K909

    Abstract: 9-0-9 step down transformer
    Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


    Original
    THS3092 THS3096 SLOS428B THS3096 K909 9-0-9 step down transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


    Original
    THS3092 THS3096 SLOS428B THS3096 PDF

    Untitled

    Abstract: No abstract text available
    Text: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω


    Original
    THS3092 THS3096 SLOS428A THS3096 PDF