Si4921DY
Abstract: No abstract text available
Text: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4921DY
0-to-10V
21-May-03
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Si4921DY
Abstract: Si4921DY-T1 Si4921DY-T1-E3
Text: Si4921DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 7.3 0.042 at VGS = - 4.5 V - 5.6 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free
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Si4921DY
Si4921DY-T1
Si4921DY-T1-E3
18-Jul-08
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72109
Abstract: No abstract text available
Text: Si4921DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 7.3 0.042 at VGS = - 4.5 V - 5.6 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free
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Si4921DY
Si4921DY-T1
Si4921DY-T1-E3
08-Apr-05
72109
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Si4921DY
Abstract: Si4921DY-T1 Si4921DY-T1-E3 72109 sec 73 s idm 73
Text: Si4921DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 7.3 0.042 at VGS = - 4.5 V - 5.6 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free
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Si4921DY
Si4921DY-T1
Si4921DY-T1-E3
S-61006-Rev.
12-Jun-06
72109
sec 73 s
idm 73
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Si4911DY
Abstract: Si4921DY
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application
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Si4921DY
20-May-04
Si4911DY
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Si4921DY
Abstract: idm 73
Text: Si4921DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = - 10 V - 7.3 0.042 @ VGS = - 4.5 V - 5.6 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS - 30
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Si4921DY
S-03181--Rev.
17-Feb-03
idm 73
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Untitled
Abstract: No abstract text available
Text: Si4921DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = - 10 V - 7.3 0.042 @ VGS = - 4.5 V - 5.6 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS - 30
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Si4921DY
08-Apr-05
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