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    RGP10J DIODE Search Results

    RGP10J DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    RGP10J DIODE Price and Stock

    onsemi RGP10J

    Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RGP10J
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    • 10000 $0.0609
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    RGP10J DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode rgp10g

    Abstract: RGP10B RGP10G
    Text: RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction


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    RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M MIL-S-19500 AEC-Q101 22-B106 diode rgp10g RGP10B RGP10G PDF

    Untitled

    Abstract: No abstract text available
    Text: RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction


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    RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M 22-B106 AEC-Q101 DO-204AL PDF

    Untitled

    Abstract: No abstract text available
    Text: RGP10J Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)1.0


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    RGP10J Voltage600 Time250n Current100uà StyleDO-41 PDF

    PG06J

    Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT
    Text: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A


    OCR Scan
    DF04M KBP04M DF06M KBP06M RGP10J RGP15J RGP30J FEP16JT FEP30JT SB040 PG06J diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a PDF

    rgp10g

    Abstract: RGP10M RGP10B RGP10 88700
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 50 V to 1000 V 30 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate


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    RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 DO-204AL, 19-Sep-05 rgp10g RGP10M RGP10B RGP10 88700 PDF

    rgp10g

    Abstract: diode RGP 30 JESD22-B102D RGP10J-E3/54 RGP10K DO-204AL J-STD-002B RGP10A RGP10M RGP10J
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


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    RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 rgp10g diode RGP 30 JESD22-B102D RGP10J-E3/54 RGP10K DO-204AL J-STD-002B RGP10M RGP10J PDF

    rgp10g

    Abstract: rgp10b
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


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    RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 rgp10g rgp10b PDF

    RGP10G

    Abstract: RGP10JE RGP10J-E3/54 DO-204AL JESD22-B102 J-STD-002 RGP10A RGP10M rgp10j-e3 88700
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


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    RGP10A RGP10M MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 18-Jul-08 RGP10G RGP10JE RGP10J-E3/54 DO-204AL JESD22-B102 J-STD-002 RGP10M rgp10j-e3 88700 PDF

    rgp10g

    Abstract: RGP-10D
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 50 V to 1000 V 30 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate


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    RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 DO-204AL, 08-Apr-05 rgp10g RGP-10D PDF

    RGP10J-E3/54

    Abstract: rgp10g rgp10j diode DO-204AL JESD22-B102D J-STD-002B RGP10A RGP10M
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t


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    RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 RGP10J-E3/54 rgp10g rgp10j diode DO-204AL JESD22-B102D J-STD-002B RGP10M PDF

    rgp10g

    Abstract: No abstract text available
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current


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    RGP10A RGP10M MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 18-Jul-08 rgp10g PDF

    rgp10g

    Abstract: No abstract text available
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency


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    RGP10A RGP10M MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU rgp10g PDF

    Untitled

    Abstract: No abstract text available
    Text: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency


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    RGP10A RGP10M MIL-S-19500 22-B106 DO-204AL DO-41) AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. PDF

    rgp10g

    Abstract: No abstract text available
    Text: New Product RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency


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    RGP10A RGP10M MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 11-Mar-11 rgp10g PDF

    rgp10g

    Abstract: No abstract text available
    Text: New Product RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency


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    RGP10A RGP10M MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU rgp10g PDF

    RGP10GI

    Abstract: 1N50S1 iRL104F 1N5622 FR10r lN4937 1N4245 1N4246 1N4248 1NS062
    Text: RECTIFIER DIODES, Standard Recovery, Glass Passivated, Glass Package S i P a rt N um ber M a x im u m A v e ra g e R e c tifie d C u rre n t at T. Peak In v e rs e V oltage I» (A m p s jT , { “ C ) PIV [V o lts ) 1N4245 1N4246 1N4247 1N4248 1N4249 1N5D59


    OCR Scan
    1N4245 1N4246 11f4247 1N4248 1N4249 1N5D59 1N506Q 1N50S1 1NS062 1N5614 RGP10GI iRL104F 1N5622 FR10r lN4937 1NS062 PDF

    GP25D

    Abstract: RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M
    Text: GLASS PASSIVATED FAST RECOVERY SILICON SUPER DIODE typ e PIV Peak inverse V o lta g e M AX AVG R e c tifie d C urre n t H a lfW a ve Res. Load 60Hz IO "> TA VPK AA V MAX FWD Peak M A X Reverse S urge C urre n t C urre n t 1 60H Z i " PIV V o lta ge S up erim p ose d


    OCR Scan
    DO-41 RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M RECOVERY/DO-201AD RGP25A GP25D RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M PDF

    rgp10j diode

    Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
    Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


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    1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode PDF

    BYT01-200

    Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
    Text: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600


    OCR Scan
    1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP BYT01-200 UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference PDF

    6a3 zener

    Abstract: DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323
    Text: JINAN JINGHENG CO., LTD. MAIN PRODUCT CONTENT 1. SCHOTTKY BARRIER RECTIFIERS Type Number Forward Current Amps Reverse Voltage Range(Volts) Case SR0620-SR06A0 0.6 20-100 DO-41 1N17-1N19 1 20-40 R-1 1N5817-1N5819 1 20-40 DO-41 1S20-1S200 1 20-200 R-1 SR120-SR1200


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    SR0620-SR06A0 DO-41 1N17-1N19 1N5817-1N5819 1S20-1S200 SR120-SR1200 SM120-SM1A0 DO-213AA) 6a3 zener DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323 PDF

    DIODE byx55 100

    Abstract: efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD
    Text: GENL INSTR/ POWER ESE D • 30T0Í37 0 0 Q 3 3 n T ■ 7^ Fast Recovery Silicon Rectifiers General Instrument’s selection of fast recovery rectifiers are designed fo r circuits requiring switching times of 150ns to 500ns. They are offered in a variety of


    OCR Scan
    150ns 500ns. GL-34 RGL34A RMPG06A# RMPG06B» RGP10A RGL34B BYM06-100 DIODE byx55 100 efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD PDF

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan
    1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1 PDF

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


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    5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106 PDF

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


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    PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent PDF