Untitled
Abstract: No abstract text available
Text: RHF1251CM Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)4 V(BR)GSS (V) I(D) Max. (A)85 P(D) Max. (W)200m Maximum Operating Temp (øC)125 I(DSS) Min. (A)12m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.
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RHF1251CM
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RHF1204CM
Abstract: RHF1205CM RHF1251CM RHF1252CM
Text: GaAs Devices I 7026^ G D O V T B T TT2 •■ RHH ■Ultra—Low Noise Hetero Structured In GaAs FET Absolute maximum ratings (Ta=25’C) Type Electrical characteristics (Ta=25ftC) Application Vos (V) Id PD (mW) Tch OC) PG Typ. (dB) NF Typ. (dB) f (GHz)
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RHF1205CM
RHF1204CM
RHF1252CM
RHF1251CM
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Untitled
Abstract: No abstract text available
Text: mum G a A s D e v ic e s • Hyper F E T Hetero Structured InGaAs FET Ultra-Low Noise H y p e r FET CST iDss(mA) lYtsl(ms) R eference catalogue 12.0 1 0 -7 0 30 and over — 12.0 1 0 -7 0 30 and over — 12.0 1 2 -6 0 30 and over — 30 and over — 30 and over
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RHF1205CM
RHF1204CM
RHF1203CM
RHF1252CM
RHF1251CM
251CM
2011SM
IX85I
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Text: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2N3906
2N3946
2N3947
2N4059
N4060
2N4061
2N4062
2N4123
2N4124
2N4125
RCM2008R
1SS299
bu24204
RCM2027
BA3422S
BA843
BA6490FS
da119 k2
BA6404
BA857
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