transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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FET differential amplifier circuit
Abstract: TGA2801D-SG
Text: 0.5-µm HFET 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section General Description
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l-band Phase Shifter
Abstract: remec Microwave RM4300 magnum microwave LM136-2.5
Text: REMEC MMIC RM4300, Preliminary Information, 2-22-06 L-Band Phase Shifter GaAs Monolithic Microwave IC Main Features The RM4300 is a 7-Bit, 128 state, phase shifter designed for radar and communication applications. The RM4300 provides < 8.5-dB insertion loss across 1.1-1.4 GHz, with RMS
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RM4300,
RM4300
50-Ohm
12-mil
l-band Phase Shifter
remec Microwave
magnum microwave
LM136-2.5
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TGS 2201
Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Text: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation
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GaAs MESFET amplifier
Abstract: TGA8310-SCC TGA8349-SCC 05um
Text: 0.5-µm Low-Noise, Low-Current MesFET LNLC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section
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YD1185
Abstract: 8935 8956 Amperex 40711 8936 v 3 Power Triode YD1187 YD1187 8936 amperex transmitting
Text: YD1185/8935 YD1187/8956 RF Power Triodes The YD1185/8935 and YD1187/8936 are RF power triodes in metal-ceramic construction intended for use as industrial oscillators. The YD1185 is forced-air cooled. The YD1187 has an integral water cooler. GENERAL DATA Electrical:
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YD1185/8935
YD1187/8956
YD1185/8935
YD1187/8936
YD1185
YD1187
0708A
0709A
8935
8956 Amperex
40711
8936 v 3
Power Triode YD1187
8936
amperex transmitting
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BiFET Processes
Abstract: No abstract text available
Text: Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J. Zampardi* Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 cristian.cismaru@skyworksinc.com, 805.480.4663 *formerly of Skyworks Keywords: Tantalum Nitride, Schottky, HBT, BiFET, GaAs, InGaP.
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Valere
Abstract: eltek rectifier H2500A1 H0750A1 Valere H2500A1 48v Eltek Valere H1250A1 eltek H1250C1 H2000A1
Text: H-series Rectifier Module Overview: The Eltek Valere rectifier modules provide unprecedented power density and power levels in a true plug and play format. With a wide range of available voltages, power ratings, and form factors, the rectifiers provide optimal and cost effective solutions for your power
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told387s
Abstract: TOLD387S-EAD VSS24 OC-192 gpo DP 704 STM-64 10 gb laser diode toshiba VF S11
Text: September 2001 Optical Communication Devices 10 Gb/s Optical Transmitter TOLD387S-EAD Series APPLICATIONS • SONET / SDH OC-192 / STM-64 applications FEATURES µm EML and Driver IC • 1.55 isolator and thermoelectric cooler • Optical compatible RF input
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OLD387S-EAD
OC-192
STM-64)
told387s
TOLD387S-EAD
VSS24
OC-192 gpo
DP 704
STM-64
10 gb laser diode
toshiba VF S11
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I-64
Abstract: STM-64 10 gb laser diode DIODE s641 OC-192 gpo
Text: September 2001 Optical Communication Devices 10 Gb/s Optical Transmitter TOLD337S-DD APPLICATIONS • SONET / SDH OC-192 / STM-64 applications FEATURES µm DFB-LD and Driver IC • 1.3 isolator and thermoelectric cooler • Optical • GPO compatible RF input
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OLD337S-DD
OC-192
STM-64)
I-64
STM-64
10 gb laser diode
DIODE s641
OC-192 gpo
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ETAL
Abstract: laser diode toshiba Thermistor cross reference STM-64 laser driver, STM-64 10 gb laser diode etalon wavelength locker OC-192 gpo
Text: March 2001 Optical Communication Devices 10 Gb/s Optical Transmitter TOLD387S-WL Series PRELIMINARY APPLICATION • SONET / SDH (OC-192 / STM-64) applications FEATURES pin butterfly package with GPO compatible RF input • 13 µm EML • 1.55 Wavelength channel available
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OLD387S-WL
OC-192
STM-64)
ETAL
laser diode toshiba
Thermistor cross reference
STM-64
laser driver, STM-64
10 gb laser diode
etalon wavelength locker
OC-192 gpo
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TOLD387S-EADW
Abstract: 10 gb laser diode laser diode toshiba STM-64 OC-192 gpo TOLD387S
Text: September 2001 Optical Communication Devices 10 Gb/s Optical Transmitter TOLD387S-EADW Series APPLICATIONS • SONET / SDH OC-192 / STM-64 DWDM applications FEATURES µm EML and Driver IC • 1.55 isolator and thermoelectric cooler • Optical stability: ±0.5 pm/˚C
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OLD387S-EADW
OC-192
STM-64)
TOLD387S-EADW
10 gb laser diode
laser diode toshiba
STM-64
OC-192 gpo
TOLD387S
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Untitled
Abstract: No abstract text available
Text: March 17, 2014 MACOM Introduces Industry's Highest Power, Full E-Band MMIC Power Amplifier Delivers typical saturated output power Psat of 25.5 dBm across the 71 to 86 GHz frequency range for high bandwidth, long distance point to point wireless backhaul
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YD1178FL
Abstract: YD1174FL YD1174 YD117 C4667 ABOVE50MHz
Text: YD1174FL YD1178FL RF Power Triodes The YD1174FL and YD1178FL are RF power triodes in metal-ceramic construction with flying leads intended for use as industrial oscillators. The YD1174FL is forced-air cooled. The YD1178FL has an integral water cooler. GENERAL DATA
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YD1174FL
YD1178FL
YD1174FL
YD1178FL
YD1174
YD117
C4667
ABOVE50MHz
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850 nm LED
Abstract: multimode optical fiber fiber multi-mode 850 led 850 nm led multimode fiber
Text: Samsung Electronics Fiberoptics products 50/125 µm Multi-mode Optical Fiber for Gigabit Ethernet SAMSUNG 50/125 µm multi-mode Optical Fiber for Gigabit Ethernet is specially designed fiber for LD based Gigabit Ethernet and other high speed laser based LAN protocols. It
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IEEE802
1130E,
1-877-ssoptic/1-877-776-7842
850 nm LED
multimode optical fiber
fiber multi-mode 850
led 850 nm
led multimode fiber
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YD1150A
Abstract: YD1152 YD1150AFL 40688 YD1150FL 40689 40686 YD1152FL 40630 c4062
Text: YD1150A, YD1150AFL, YD1152, YD1152FL RF Power Triodes The YD1150A, YD1150AFL, YD1152 and YD1152FL are RF power triodes of metal-ceramic construction intended for use as industrial oscillators. The YD1150AFL and YD1152FL have flying leads. GENERAL DATA YD1150A
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YD1150A,
YD1150AFL,
YD1152,
YD1152FL
YD1152
YD1152FL
YD1150AFL
YD1150A
40688
YD1150FL
40689
40686
40630
c4062
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40707
Abstract: YD1197 8937 YD1195 8913 40736
Text: YD1195/8913 YD1197/8937 RF Power Triodes The YD1195/8913 and YD1197/8937 are RF power triodes in metal-ceramic construction intended for use as industrial oscillators. The YD1195 is forced-air cooled. The YD1197 has an integral water cooler. GENERAL DATA Electrical:
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YD1195/8913
YD1197/8937
YD1195/8913
YD1197/8937
YD1195
YD1197
YD1195/89nnector
0705A
0706A
40707
8937
8913
40736
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77GHz Radar
Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
Text: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,
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100GHz
77GHz Radar
PPH25x
ulm 2003
ph15 transistor
pph15 transistor
HB20M
24GHz Radar
military switch
PPH25
thales SMD
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40691
Abstract: 40693A wia 102 YD1170 YD1172 40690
Text: YD1170/8666 YD1172/8668 RF Power Triodes Triodes in metal-ceramic construction intended for use as industrial oscillators. The YD1170 is forced-air cooled. The YD1172 has an integral helical water cooler. GENERAL DATA Electrical: Filament-Thoriated TungstenNote 1
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YD1170/8666
YD1172/8668
YD1170
YD1172
Wat/8666
0692A
0693A
40691
40693A
wia 102
40690
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ERJ8GEYJ100V
Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V
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HVV1012-250
429-HVVi
EG-01-DS09B
ERJ8GEYJ100V
Johanson Technology
C1206C102K1RACTU
C1206C103K1RACTU
445-4109-2-ND
478-2666-1-ND
251R15S
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HVV1214-140
Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain
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HVV1214-140
429-HVVi
EG-01-PO22X1
HVV1214-140
L-Band 1200-1400 MHz
SMD TRANSISTOR PD4
radar circuit
ERJ8GEYJ100V
L-band RF MOSFET
1030mhz
"RF MOSFET CLASS AB
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Untitled
Abstract: No abstract text available
Text: PGR 203 01 PIN Receiver Module for 2.5 Gb/s Key Features • Hermetic, 14 pin butterfly package with multisourced footprint • FC/PC, SC or ST connector • InGaAs PIN photo diode with low noise GaAs MMIC preamplifier • AC-coupled, single-ended data output
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STM-16
OC-48
SE-164
1522-PGR
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InGaAs APD Pre-Amplifier
Abstract: PIN APD OPTICAL DIODE ingaas apd preamp receiver -20 1.25 ingaas apd preamp receiver -20 1.25 Gbps InGaAs APD Pre-Amplifier 14 pin
Text: PGR 203 14 APD Receiver Module for 2.5 Gb/s Key Features • Hermetic, 14 pin butterfly package with multisourced footprint • FC/PC, SC or ST connector • InGaAs APD with low noise GaAs MMIC preamplifier • AC-coupled, single-ended data output • Operates between 1250 nm and
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STM-16
OC-48
SE-164
1522-PGR
InGaAs APD Pre-Amplifier
PIN APD OPTICAL DIODE
ingaas apd preamp receiver -20 1.25
ingaas apd preamp receiver -20 1.25 Gbps
InGaAs APD Pre-Amplifier 14 pin
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