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    RJK06 Search Results

    RJK06 Result Highlights (5)

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    RJK0601DPN-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 60V 110A 3.1Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK0653DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 45A 4.8Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0652DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 7Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0602DPN-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 60V 100A 3.9Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK0655DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 6.7Mohm Lfpak Visit Renesas Electronics Corporation
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    RJK06 Price and Stock

    Renesas Electronics Corporation RJK0651DPB-00#J5

    MOSFET N-CH 60V 25A LFPAK
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    DigiKey RJK0651DPB-00#J5 Reel 22,500 2,500
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    RJK0651DPB-00#J5 Cut Tape 426 1
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    Mouser Electronics RJK0651DPB-00#J5 233,427
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    Bristol Electronics RJK0651DPB-00#J5 43
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    Renesas Electronics America RJK0651DPB-00#J5 Tape & Reel (TR) 22,926 1
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    Win Source Electronics RJK0651DPB-00#J5 35,000
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    Rochester Electronics LLC RJK0657DPA-00#J5A

    MOSFET N-CH 60V 20A 8WPAK
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    DigiKey RJK0657DPA-00#J5A Bulk 21,000 387
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    Renesas Electronics Corporation RJK0659DPA-00#J5A

    MOSFET N-CH 60V 30A 8WPAK
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    DigiKey RJK0659DPA-00#J5A Reel 6,000 3,000
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    Avnet Americas RJK0659DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK0659DPA-00#J5A
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    Renesas Electronics America RJK0659DPA-00#J5A Tape & Reel (TR) 6,000 1
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    Renesas Electronics Corporation RJK0658DPA-00#J5A

    MOSFET N-CH 60V 25A 8WPAK
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    DigiKey RJK0658DPA-00#J5A Reel 6,000 3,000
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    Avnet Americas RJK0658DPA-00#J5A Reel 18 Weeks 3,000
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    Renesas Electronics America RJK0658DPA-00#J5A Tape & Reel (TR) 6,000 1
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    Renesas Electronics Corporation RJK0660DPA-00#J5A

    MOSFET N-CH 60V 40A 8WPAK
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    DigiKey RJK0660DPA-00#J5A Reel 6,000 3,000
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    Avnet Americas RJK0660DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK0660DPA-00#J5A
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    Avnet Asia RJK0660DPA-00#J5A 18 Weeks 3,000
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    Flip Electronics RJK0660DPA-00#J5A 3,000
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    Renesas Electronics America RJK0660DPA-00#J5A Tape & Reel (TR) 6,000 1
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    Find more RJK06 price and stock on Findchips.com

    RJK06 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK0601DPN-E0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 110A TO220 Original PDF
    RJK0602DPN-E0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO220 Original PDF
    RJK0603DPN-E0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 80A TO220 Original PDF
    RJK0629DPE-00#J3 Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 85A LDPAK Original PDF
    RJK0651DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A LFPAK Original PDF
    RJK0652DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK Original PDF
    RJK0653DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 45A LFPAK Original PDF
    RJK0654DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V LFPAK Original PDF
    RJK0655DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK Original PDF
    RJK0656DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A LFPAK Original PDF
    RJK0657DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A WPAK Original PDF
    RJK0658DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A WPAK Original PDF
    RJK0659DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A WPAK Original PDF
    RJK0660DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A WPAK Original PDF

    RJK06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK0652DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0652DPB R07DS0077EJ0200 PTZZ0005DA-A RJK0652DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 6.2 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0630JPE R07DS0340EJ0100 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPE R07DS0341EJ0200 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJK0629DPN N Channel Power MOS FET High-Speed Switching Use REJ03G1873-0100 Rev.1.00 Dec 15, 2009 Features • VDSS: 60 V • RDS on : 4.5 mΩ (Max) • ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1. Gate


    Original     		PDF RJK0629DPN REJ03G1873-0100 PRSS0004AC-A O-220AB)

    RJK0656DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A RJK0656DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 O-220AB R07DS0653EJ0200 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0603DPN-E0 O-220AB R07DS0654EJ0100 PRSS0004AC-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0603DPN-E0 O-220AB R07DS0654EJ0200 PRSS0004AG-A O-220AB)

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPR R07DS0879EJ0300 AEC-Q101 PRSS0003AD-A O-220FM)

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB R07DS1052EJ0200 REJ03G1880-0100) PTZZ0005DA-A RJK0654DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0660DPA R07DS0346EJ0300 PWSN0008DE-A

    RJK0659DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0659DPA R07DS0345EJ0300 PWSN0008DE-A RJK0659DPA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPD R07DS0252EJ0300 AEC-Q101 PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A curr9044

    RJK0653DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A cur9044 RJK0653DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0628JPE R07DS0336EJ0100 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0603DPN-E0 R07DS0654EJ0100 O-220AB PRSS0004AC-A O-220AB)

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 R07DS0653EJ0100 O-220AB PRSS0004AC-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features •    High speed switching Low drive current Low on-resistance RDS on = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0601DPN-E0 O-220AB R07DS0652EJ0200 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 O-220AB R07DS0653EJ0100 PRSS0004AC-A O-220AB)

    RJK0632

    Abstract: R07DS0342EJ0100 RJK0632JPD-00 RJK0632JPD
    Text: Preliminary Datasheet RJK0632JPD Silicon N Channel MOS FET High Speed Power Switching R07DS0342EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 29 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0632JPD AEC-Q101 R07DS0342EJ0100 PRSS0004ZD-C RJK0632 RJK0632JPD-00 RJK0632JPD