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    RKD701KN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RKD701KN Renesas Technology Silicon Schottky Barrier Diode for High Speed Switching Original PDF

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    RKD701KN

    Abstract: No abstract text available
    Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and


    Original
    PDF RKD701KN REJ03G1471-0100 0805type; PXSN0002ZA-A RKD701KN

    Untitled

    Abstract: No abstract text available
    Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and


    Original
    PDF RKD701KN REJ03G1471-0100 0805type; RKD701KN PXSN0002ZA-A

    RKD701KN

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF