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RLT808100GS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RLT808100GS		Roithner-Laser	High Power Infrared Laserdiode		Original	PDF

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Catalog Datasheet	Type	Document Tags	PDF
Laser Diode 808 2 pin 1000 mw Abstract: 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GS TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 3 x 1 µm	Original	RLT808100GS Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode	PDF

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Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GS TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 3 x 1 µm

Original

RLT808100GS Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode

PDF