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    Zener Diode minimelf

    Abstract: RLZ24 RLZ Series
    Text: Formosa MS GLASS MINI-MELF Zener Diode RLZ SERIES List List. 1 Package outline. 2


    Original     		PDF 1000hrs. DS-221725 Zener Diode minimelf RLZ24 RLZ Series

    CQY78

    Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
    Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge


    Original     		PDF BPW33) CQY78 CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium

    CQY78

    Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
    Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The


    Original     		PDF

    PC902

    Abstract: E64380 UAA 170 t225c rlz ce opic
    Text: PC902 PC902 AC Input Type OPIC Photoooupler 9 Features 1. Capable of forming an integration circuit in conjunction with an external capacitor 2. AC input 3. High sensitivity 1~,~ : MAX. 2mA 4. High isolation voltage between input and output (v., :5 Ooovrm,)


    Original     		PDF PC902 E64380 Duty50Y0 PC902 E64380 UAA 170 t225c rlz ce opic

    red red green zener diode

    Abstract: 5200B RLZ5232B LL34 RLZ5242B Brown Green zener diode RED Color band DIODES brown brown green zener diode RLZ5221B LL-34 diodes color yellow RLZ5240B
    Text: RLZ 5200B series Diode, Zener, 500 mW, leadless These glass-sealed Zener diodes are suitable for high density surface mounting on printed circuit boards. Because of their cylindrical shape they can also be mounted flat. They can be used to regulate voltages between 2.3 and 24 V.


    OCR Scan     		PDF 5200B LL-34) RLZ5221B RLZ5237B RLZ5222B RLZ5238B RLZ5223B RLZ5239B RLZ5224B RLZ5240B red red green zener diode RLZ5232B LL34 RLZ5242B Brown Green zener diode RED Color band DIODES brown brown green zener diode LL-34 diodes color yellow

    J27B

    Abstract: 1N4148 SMD LL-34 1SS299 J36B RLZ27D J39C rlz5.1c RLZ9.1C 1N746 do-35 smd package J62B
    Text: TOTTTÎ7I Diodes • Switching Diodes • High-Speed Switching Diodes # U nder D evelopm ent Absolute m aximum ratings Ta = 25'C Type r? g y uBy Ir(//A) Max. V hm (V) Vr (V) Ifm (mA) I;' (mA) Isurge (mA) 1s T| ( C) Tstg CC) V r(V) f(MHz) 90 80 400 130 600


    OCR Scan     		PDF N5245 1N5245A 1N5245B 1N5246 1N5246A 1N5246B 1N5247 1N5247A 1N5247B 1N5248 J27B 1N4148 SMD LL-34 1SS299 J36B RLZ27D J39C rlz5.1c RLZ9.1C 1N746 do-35 smd package J62B

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply • Full CMOS, 6T Cell Separate Input and Output Ports ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -1 5 /2 0 /2 5 /3 5 ns (Military)


    OCR Scan     		PDF P4C150 24-Pin 28-PIn 96-bit

    Untitled

    Abstract: No abstract text available
    Text: .025 [0.63] REF. 026 [0.66] .026 [0.66]- -,057±.008 [1 ,46±0.20] 120 [3.00] NOTES: 1 CAPACITANCE 1 0 0 0 h rs .): 2) CAP TOLERANCE: 3) DISSIPATION FACTOR: 4% 4) INSULATION RESISTANCE: 2 5 ‘C 1G0HM 5) 2 0 0 VDC RATED @ + 125"C 6) DIELECTRIC WITHSTANDING VOLTAGE: 7 0 0 VDC


    OCR Scan     		PDF 4000pF

    Untitled

    Abstract: No abstract text available
    Text: RAMALE] R 1 9 1 . 9 7 5 . 7 7 1 TECHNICAL COAXIAL CONNECTORS DATA ADAPTOR SMA 3 .5 H - HMS F r Issu e 9218 : Page SERIES. ADAPT MES 50 / 1 CHARACTERISTICS 50 o NOMINAL IMPEDANCE 0-2 FREQUENCY RANGE STANDARDISATION GHz -40/+90 *c TEMPERATURE RATING VSWR 1 . 07 Host


    OCR Scan     		PDF 315/FLats 9-APR-92

    Untitled

    Abstract: No abstract text available
    Text: RAMALE] R 1 9 1 . 9 7 5 . 7 7 1 TECHNICAL COAXIAL CONNECTORS DATA ADAPTOR SMA 3 .5 H - HMS F r Issu e 9218 : Page SERIES. ADAPT MES 50 / 1 CHARACTERISTICS 50 o NOMINAL IMPEDANCE 0-2 FREQUENCY RANGE STANDARDISATION GHz -40/+90 *c TEMPERATURE RATING VSWR 1 . 07 Host


    OCR Scan     		PDF 9-APR-92

    Untitled

    Abstract: No abstract text available
    Text: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board.


    OCR Scan     		PDF MB85403A-40 MB85W3A-50 MB85403A MB81C81A 44-pin MB85403 MB81C81A, MB85403A-40) MB85403A-50) HB854-03A-40

    b414

    Abstract: 74LVC245PW LVC245 74LVC245DB 7551 74LVC245 74LVC245D 74lvc245 Philips
    Text: Philips Semiconductors Product Specification Octal bus transceiver with direction pin; 3-state FEATURES • • • • • • 74LVC245 QUICK REFERENCE DATA GND = 0 V; Timb = 25 °C; t, = t, £ 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V In accordance with the JEDEC


    OCR Scan     		PDF 74LVC245 74LVC245 711002b b414 74LVC245PW LVC245 74LVC245DB 7551 74LVC245D 74lvc245 Philips

    Untitled

    Abstract: No abstract text available
    Text: 5 M U W DM©. High-Speed Parallel _> * . _• 4 ^ * First-In First Out Buffer Memories Q QS8201 512x9 QS8202 1Kx9 Advance Information FEATURES/BENEFITS First-In First-Out Dual Port RAM-based cell Asynchronous and Simultaneous Read and Write High Speed access 15 ns with zero fall-through time


    OCR Scan     		PDF QS8201 512x9 QS8202 MIL-STD-883, mil/600 QS8201/8202

    C 2335

    Abstract: No abstract text available
    Text: File Number BUY69A, BUY69B, BUY69C 1237 High Voltage Silicon N-P-N Power Transistors TERM INAL D ESIG N A I lu N S For Horizontal-DefleCtion Circuits and Other High-Voltage Switching Applications Features: • Fast S w itching Speed ■ H igh Voltage Ratings: VCCx - 500-1000V


    OCR Scan     		PDF BUY69A, BUY69B, BUY69C 00-1000V TQ-204AA C 2335

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES • Full CMOS, 6T Cell ■ Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Fully TTL Compatible Inputs and Outputs ■ Produced with PACE II Technology


    OCR Scan     		PDF P4C150 24-Pln 096-bit MIL-STD-883D -12PC -12DC -12SC

    Untitled

    Abstract: No abstract text available
    Text: 57C4502-50/65/80 • Retransmit capability • Expandable in both width andjtepth • Increased noise immunity for XI - CMOS threshold • Functional and pin compatible with industry standard devices GENERAL DESCRIPTION This FIFO can accept data and output data asynchro­


    OCR Scan     		PDF 57C4502-50/65/80 57C4502

    6Cs smd

    Abstract: smd 6CS SMD-5962-88588 sei smd resistors P4C147 P4C150 RS723
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM j *— -FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial)


    OCR Scan     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit -10PC -15PC 6Cs smd smd 6CS SMD-5962-88588 sei smd resistors P4C147 RS723

    Untitled

    Abstract: No abstract text available
    Text: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)


    OCR Scan     		PDF P4C151 MIL-STD-883C P4C151 -10PC -12PC -12DC -15PC -15DC -20PC -20DC

    RLS135

    Abstract: 719d GE185 smd DA RN A223D DA228K
    Text: The Class and Basic Ordering Units for Standard and Semi-standard Products • h i h i m s M ■Standard Products, Semi-standard Products, •Please note the following when placing an order. To m ake it easier for customers to select the most suitable product for


    OCR Scan     		PDF LS4447 LL-41) TE21C RLR4001 RLS135 719d GE185 smd DA RN A223D DA228K

    DA323U

    Abstract: DA323 RB035B-40 DA223 RB031B-40 LS140 RB435 DA226U T106 DAN23SU DA228K
    Text: The Class and Basic Ordering Units for Standard and Semi-standard Products 6 Please note the following when placing an order. The quantity in an order must be in multiplies of the basic order unit. ♦R em a rks Û : Standard products O : Semi-standard products


    OCR Scan     		PDF orS4606 LL-41) RLR4001 RLR4002 RLR4003 RLR4004 TE-21 TE-22 TE-24 TE21C DA323U DA323 RB035B-40 DA223 RB031B-40 LS140 RB435 DA226U T106 DAN23SU DA228K

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT52C4K9A1/ 8K9B2 4K x 9, 8K x 9 FIFO I^ IIC R O N 4K x 9 ,8K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View V ery h ig h sp eed : 15, 20, 25 an d 35n s access H ig h -p e rfo rm a n ce, lo w -p o w er C M O S p ro cess Sin g le + 5 V ± 1 0 % su p p ly


    OCR Scan     		PDF MT52C4K9A1/ MT52C4K9A1 /MT52C8K9B2

    marking g9c

    Abstract: No abstract text available
    Text: 3flE D MICRON TECHNOLOGY INC • IMRN talllSMI OOOBO^fl 5 ADVANCE t -H C -z 2K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typ. (standby); 350mW typ. (active)


    OCR Scan     		PDF 350mW T-46-35 marking g9c

    1S21

    Abstract: P4C150
    Text: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)


    OCR Scan     		PDF P4C150 -713mW 24-Pln 096-bit Tbl14 MIL-STD-883D -10PC 1S21