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    RN111 Price and Stock

    Toshiba America Electronic Components RN1117MFV,L3F

    TRANS PREBIAS NPN 50V 0.1A VESM
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    DigiKey RN1117MFV,L3F Reel 8,000 8,000
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    RN1117MFV,L3F Digi-Reel 8,000 1
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    RN1117MFV,L3F Cut Tape 8,000 1
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    Avnet Americas RN1117MFV,L3F Reel 12 Weeks 8,000
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    TTI RN1117MFV,L3F Reel 8,000
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    Toshiba America Electronic Components RN1119MFV,L3F

    TRANS PREBIAS NPN 50V 0.1A VESM
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    DigiKey RN1119MFV,L3F Cut Tape 7,970 1
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    RN1119MFV,L3F Digi-Reel 7,970 1
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    TTI RN1119MFV,L3F Reel 8,000
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    Toshiba America Electronic Components RN1116,LF(CT

    TRANS PREBIAS NPN 50V 0.1A SSM
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    DigiKey RN1116,LF(CT Digi-Reel 6,130 1
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    RN1116,LF(CT Cut Tape 6,130 1
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    RN1116,LF(CT Reel 6,000 3,000
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    Mouser Electronics RN1116,LF(CT 7,390
    • 1 $0.14
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    TTI RN1116,LF(CT Reel 3,000
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    Toshiba America Electronic Components RN1113,LXHF(CT

    AUTO AEC-Q NPN Q1BSR=47K, VCEO=5
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    DigiKey RN1113,LXHF(CT Reel 6,000 3,000
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    Avnet Americas RN1113,LXHF(CT Reel 36 Weeks 3,000
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    Mouser Electronics RN1113,LXHF(CT 6,000
    • 1 $0.25
    • 10 $0.228
    • 100 $0.153
    • 1000 $0.091
    • 10000 $0.042
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    Toshiba America Electronic Components RN1116,LXHF(CT

    TRANS PREBIAS NPN 50V 0.1A SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RN1116,LXHF(CT Reel 6,000 3,000
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    • 10000 $0.06114
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    Avnet Americas RN1116,LXHF(CT Reel 36 Weeks 3,000
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    Mouser Electronics RN1116,LXHF(CT 6,000
    • 1 $0.25
    • 10 $0.233
    • 100 $0.129
    • 1000 $0.105
    • 10000 $0.041
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    RN111 Datasheets (169)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN1110 Toshiba Japanese - Transistors Original PDF
    RN1110 Toshiba Transistors Original PDF
    RN1110 Toshiba TRANS DIGITAL BJT NPN 50V 100A 3(2-2H1A) Original PDF
    RN1110 Toshiba NPN Transistor Original PDF
    RN1110 Toshiba RN1110 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    RN1110,LF(CT Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.1W SSM Original PDF
    RN1110ACT Toshiba Japanese - Transistors Original PDF
    RN1110ACT Toshiba RN1110 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1110CT Toshiba Japanese - Transistors Original PDF
    RN1110CT Toshiba Transistors Original PDF
    RN1110CT Toshiba RN1110 - TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1110CT(TPL3) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN NPN CST3 20V 50A Original PDF
    RN1110F Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original PDF
    RN1110F Toshiba RN1110 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1110FS Toshiba Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Original PDF
    RN1110FS Toshiba RN1110 - TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1110FT Toshiba Original PDF
    RN1110FT Toshiba TRANS DIGITAL BJT NPN 50V 100MA 3(2-1B1A) Original PDF
    RN1110FV Toshiba TRANS DIGITAL BJT NPN 50V 100MA 3VESM Original PDF
    ...

    RN111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1118MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


    Original
    PDF RN1118MFV RN2118MFV 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1112CT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


    Original
    PDF RN1112CT RN2112CT 16-Apr-09

    RN1112

    Abstract: RN1113 RN2112 RN2113
    Text: RN1112,RN1113 シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN1112,RN1113 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original
    PDF RN1112 RN1113 RN2112, RN2113 RN1112 RN1113 RN2112 RN2113

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    PDF RN1112FT RN1113FT RN2112FT, RN2113FT RN1113FT RN2112FT RN2113FT

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF RN1112F RN1113F RN2112F, RN2113F RN1113F RN2112F RN2113F

    Untitled

    Abstract: No abstract text available
    Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    PDF RN1112F RN1113F RN2112F, RN2113F RN1112F

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original
    PDF RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation,

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original
    PDF RN1110CT, RN1111CT RN2110CT, RN2111CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT, RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original
    PDF RN1112CT RN1113CT RN1112CT, RN2112CT, RN2113CT

    RN1110MFV

    Abstract: RN1111MFV RN2110MFV RN2111MFV
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.


    Original
    PDF RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more


    Original
    PDF RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS

    RN1114FT

    Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
    Text: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design


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    PDF RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT RN1114FT RN1115FT RN1116FT RN1117FT RN1118FT

    RN1114

    Abstract: RN1115 RN1116 RN1117 RN1118 RN2114
    Text: RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplified circuit design


    Original
    PDF RN1114 RN1118 RN1114, RN1115, RN1116, RN1117, RN2114 RN1114 RN1115 RN1115 RN1116 RN1117 RN1118

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original
    PDF RN1112CT RN1113CT RN2112CT, RN2113CT

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original
    PDF RN1110CT, RN1111CT RN1110CT RN2110CT, RN2111CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • •


    Original
    PDF RN1112ACT, RN1113ACT RN1112ACT RN2112ACT, RN2113ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2110FS, RN2111FS


    Original
    PDF RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS

    Untitled

    Abstract: No abstract text available
    Text: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design


    Original
    PDF RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT

    Untitled

    Abstract: No abstract text available
    Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    PDF RN1110F RN1111F RN2110F, RN2111F

    Untitled

    Abstract: No abstract text available
    Text: RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process


    Original
    PDF RN1112 RN1113 RN1112, RN2112, RN2113 RN1113

    RN2110FV

    Abstract: RN1110FV
    Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV


    Original
    PDF RN1110FV RN1111FV RN1110FV, RN2110FV RN2111FV

    1117F

    Abstract: No abstract text available
    Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan
    PDF RN1112F RN1113F 1117F RN2112F, RN2113F 1117F

    ic 2113

    Abstract: No abstract text available
    Text: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113


    OCR Scan
    PDF RN2112 RN2112) RN1112, RN1113 RN2112 RN2113 ic 2113

    103 SSM MARKING

    Abstract: No abstract text available
    Text: RN1112,1113 RN1112 U nit in mm S W IT C H IN G , IN V E R T E R C IR C U IT , IN T E R F A C E C IR C U IT A N D D R IV E R C IR C U IT A P P L IC A T IO N S . • • • • 0.8 ± 0.1 W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


    OCR Scan
    PDF RN1112 RN1112) RN2112, RN2113 RN1113 1111i RN1112, 103 SSM MARKING