Untitled
Abstract: No abstract text available
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2110FS, RN2111FS
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Original
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RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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Original
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RN1110F
RN1111F
RN2110F,
RN2111F
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PDF
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RN2110FV
Abstract: RN1110FV
Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV
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Original
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RN1110FV
RN1111FV
RN1110FV,
RN2110FV
RN2111FV
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PDF
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RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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Original
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RN1110F
RN1111F
RN2110F,
RN2111F
RN1111F
RN2110F
RN2111F
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PDF
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RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
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Original
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RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
RN1111FS
RN2110FS
RN2111FS
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PDF
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RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN1110F
RN1111F
RN2110F,
RN2111F
RN1111F
RN2110F
RN2111F
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PDF
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Toshiba xm
Abstract: No abstract text available
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
Toshiba xm
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PDF
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RN2111FS
Abstract: No abstract text available
Text: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN1110FS, RN1111FS
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Original
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RN2110FS
RN2111FS
RN1110FS,
RN1111FS
RN2111FS
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PDF
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RN1111FV
Abstract: RN1110FV RN2110FV RN2111FV
Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV,RN1111FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplify circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV, RN2111FV
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Original
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RN1110FV
RN1111FV
RN2110FV,
RN2111FV
RN1111FV
RN2110FV
RN2111FV
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PDF
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RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more
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Original
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RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
RN1111FS
RN2110FS
RN2111FS
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PDF
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RN2111FT
Abstract: RN1110FT RN1111FT RN2110FT XK 10 equivalent
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT, RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN1110FT,
RN2110FT,
RN2111FT
RN1110FT
RN2111FT
RN1111FT
RN2110FT
XK 10 equivalent
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PDF
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RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
RN1111FT
RN2110FT
RN2111FT
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PDF
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RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN1110FS, RN1111FS
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Original
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RN2110FS
RN2111FS
RN1110FS,
RN1111FS
RN1110FS
RN1111FS
RN2111FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN1110F
RN1111F
RN2110F,
RN2111F
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more
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Original
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RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
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PDF
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RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT XK 10 equivalent
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
RN1111FT
RN2110FT
RN2111FT
XK 10 equivalent
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PDF
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RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN1110F,RN1111F 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110F,RN1111F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm
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Original
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RN1110F
RN1111F
RN2110FRN2111F
RN1110F
RN1111F
RN2110F
RN2111F
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PDF
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RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN1110FS,RN1111FS 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110FS,RN1111FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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Original
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RN1110FS
RN1111FS
RN2110FSRN2111FS
RN1110FS
RN1111FS
RN2110FS
RN2111FS
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PDF
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RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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Original
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RN1110F
RN1111F
RN2110F,
RN2111F
RN1111F
RN2110F
RN2111F
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
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PDF
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RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
RN1111FT
RN2110FT
RN2111FT
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PDF
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RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT
Text: RN1110FT,RN1111FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110FT,RN1111FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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Original
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RN1110FT
RN1111FT
RN2110FTRN2111FT
RN1110FT
RN1111FT
RN2110FT
RN2111FT
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN1110F,RN1111F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 111Í1F 'm m m m m g R M 1 1 1 1■■F m m m 'm m m m SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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OCR Scan
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RN1110F
RN1111F
RM1111
RN2110F,
RN2111F
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA R N 11 10F#R N 111 1F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110F, RN1111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN1110F,
RN1111F
RN2110F,
RN2111F
RN1110F
RN1111F
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PDF
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