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Toshiba America Electronic Components RN1444ATE85LF TRANS PREBIAS NPN 20V 0.3A SMINI
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DigiKey	RN1444ATE85LF	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	RN1444ATE85LF	Digi-Reel			1	1 $0.39 10 $0.39 100 $0.39 1000 $0.39 10000 $0.39	Buy Now
	RN1444ATE85LF	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
SEI Stackpole Electronics Inc RN1/4-442K-1%-TR
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Onlinecomponents.com	RN1/4-442K-1%-TR		500			1 $0.563 10 $0.563 100 $0.333 1000 $0.061 10000 $0.061	Buy Now
Toshiba America Electronic Components RN1444-A(TE85L)
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Quest Components	RN1444-A(TE85L)		4,572			1 $2.328 10 $2.328 100 $2.328 1000 $0.9603 10000 $0.873	Buy Now
SEI Stackpole Electronics Inc RN1/4-44.2K-1%
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NexGen Digital	RN1/4-44.2K-1%		4,949			1 - 10 - 100 - 1000 - 10000 -	Get Quote

RN1444 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
RN1444	Toshiba	Japanese - Transistors	Original	PDF
RN1444	Toshiba	Silicon NPN Epitaxial Type (PCT Process) Transistor	Original	PDF
RN1444	Toshiba	NPN Transistor	Original	PDF
RN1444A	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444-A	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444A(TE85L)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444A(TE85L2)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444-A(TE85L,F)	Toshiba	RN1444 - Trans Digital BJT NPN 20V 300mA 3-Pin S-Mini T/R	Original	PDF
RN1444-ATE85LF	Toshiba	RN1444 - Trans Digital BJT NPN 20V 300mA 3-Pin S-Mini T/R	Original	PDF
RN1444ATE85LF	Toshiba	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN S-MINI	Original	PDF
RN1444A(TE85R)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444A(TE85R2)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444B	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444-B	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF

RN1444B(TE85L)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444B(TE85L2)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444B(TE85R)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444B(TE85R2)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444(TE85L)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1444(TE85L2)	Toshiba	RN1444 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	Original	PDF

RN1444 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441 RN1444 RN1442 RN1443 O-236MOD SC-59 RN1443
Untitled Abstract: No abstract text available Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441, RN1442, RN1443, RN1444 Muting and Switching Applications Unit: mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441â RN1444 RN1441, RN1442, RN1443, O-236MOD SC-59
Untitled Abstract: No abstract text available Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Unit in mm Muting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441â RN1444 RN1441 RN1442 RN1443 O-236MOD SC-59
RN1441 Abstract: RN1442 RN1443 RN1444 Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 RN1444
Untitled Abstract: No abstract text available Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441 RN1444 RN1442 RN1443 O-236MOD SC-59
Untitled Abstract: No abstract text available Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59
RN1441 Abstract: RN1442 RN1443 RN1444 961001EAA2 Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 961001EAA2' RN1444 961001EAA2
RN1441 Abstract: RN1442 RN1443 RN1444 Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)	Original	PDF	RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 RN1444
RN1441 Abstract: RN1442 RN1443 RN1444 Text: RN1441～RN1444 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1441,RN1442,RN1443,RN1444 ○ ミューティング用 ○ スイッチング用単位: mm z エミッタ・ベース間電圧が大きい。	Original	PDF	RN1441RN1444 RN1441 RN1442 RN1443 RN1444 236MOD RN1441 RN1442 RN1443 RN1444
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R
Toshiba c850 Abstract: toshiba c850 r472 prescott 800 schematic 24C02 wp st RSS090 SAMSUNG lcd INVERTER Preface Notebook Computer teac DVD player power circuit diagram Etron Technology samsung lcd tv power supply schematic Text: Preface Notebook Computer D870P Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are	Original	PDF	D870P 10MIL 10MIL C217D126 C178D126 Toshiba c850 toshiba c850 r472 prescott 800 schematic 24C02 wp st RSS090 SAMSUNG lcd INVERTER Preface Notebook Computer teac DVD player power circuit diagram Etron Technology samsung lcd tv power supply schematic
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
toshiba YK smd marking Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Untitled Abstract: No abstract text available Text: T O S H IB A RN1441 ~RN1444 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN 1443, RN1444 Unit in mm MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage : V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (V C E = —2V, IC = —4mA)	OCR Scan	PDF	RN1441 RN1444 RN1441, RN1442, O-236MOD SC-59
RN1444-A Abstract: RN1441 RN1442 RN1443 RN1444 Text: TO SH IB A RN 1441 ~ RN 1444 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN1443, RN1444 U nit in mm MUTING AN D SW ITCHING APPLICATION S • High Emitter-Base • High Reverse h p g Voltage :V e b o = 25V + 0.5 2.5 - 0 . 3	OCR Scan	PDF	RN1441 RN1444 RN1441, RN1442, RN1443, RN1444 RN1444-A RN1441 RN1442 RN1443
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Marking XA XB XC XD XE XF XH XI XJ XK XM Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107	OCR Scan	PDF	RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
1441-RN Abstract: k 1441 1444 G n1444 1444 Text: TOSHIBA RN 1441 ~ RN 1444 TOSHIBA TRANSISTOR RN1AA1 m m u g • m ■ w ■ SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1AA7 RN1AA3 m m g m m g uRN1AAA m u -m u m m m u m u -m u ■ « ■ w ■ v MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage	OCR Scan	PDF	RN1441 RN1442 RN1443 RN1444 RN1441 1441-RN RN1443 k 1441 1444 G n1444 1444
bo 200 Abstract: TO-236MOD Text: SILICON NPN EPITAXIAL T Y P E RM ^ ^ ~RN 1^ j 1 Unit in mm M UTING A N D SWITCHING APPLICATIONS + 0.5 2 5 - 0 .3 • High Emitter-Base Voltage :V gjjo= 25V Min. • High Reverse hyg : Reverse hFE = 150 (Typ.) (VCE=—2V, Ic= -4m A ) • Low On Resistance :RON= 1^ (Typ.) (lB = 5mA)	OCR Scan	PDF	O-236MOD SC-59 RN1442 RN1443 RN1444 RN1441 bo 200 TO-236MOD
RN2226 Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015 Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package	OCR Scan	PDF	2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015
RN1417 Abstract: rn4601 Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404	OCR Scan	PDF	RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601

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RN1444 Search Results

RN1444 Price and Stock

Toshiba America Electronic Components RN1444ATE85LF

SEI Stackpole Electronics Inc RN1/4-442K-1%-TR

Toshiba America Electronic Components RN1444-A(TE85L)

SEI Stackpole Electronics Inc RN1/4-44.2K-1%

RN1444 Datasheets (22)

RN1444 Datasheets Context Search

Untitled

Untitled

Untitled

RN1441

Untitled

Untitled

RN1441

RN1441

RN1441

lm2804

SSM3J307T

Toshiba c850

alternator diode 1776 B

GT30F131

IGBT GT30F124

toshiba YK smd marking

Untitled

RN1444-A

2N3904 331 transistor

Marking XA XB XC XD XE XF XH XI XJ XK XM

1441-RN

bo 200

RN2226

RN1417